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    FPD1500 Search Results

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    FPD1500 Price and Stock

    RF Micro Devices Inc FPD1500SOT89

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics FPD1500SOT89 100 2
    • 1 -
    • 10 $2.912
    • 100 $2.0908
    • 1000 $2.0908
    • 10000 $2.0908
    		Buy Now

    Filtronic plc FPD1500SOT89

    SI, N-CHANNEL, RF POWER, HEMFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FPD1500SOT89 7,554
    • 1 $7.5
    • 10 $7.5
    • 100 $7.5
    • 1000 $2.75
    • 10000 $2.625
    		Buy Now
    FPD1500SOT89 616
    • 1 $7.5
    • 10 $7.5
    • 100 $7.5
    • 1000 $3.75
    • 10000 $3.75
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    ICL FPD1500SOT89

    SI, N-CHANNEL, RF POWER, HEMFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FPD1500SOT89 80
    • 1 $6
    • 10 $3
    • 100 $2.8
    • 1000 $2.8
    • 10000 $2.8
    		Buy Now

    FPD1500 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FPD1500 Filtronic 1W POWER PHEMT Original PDF
    FPD1500DFN Filtronic Low Noise High Linearity Packaged pHEMTt Original PDF
    FPD1500SOT89 Filtronic Low Noise High Linearity Packaged pHEMTt Original PDF
    FPD1500SOT89CE Filtronic LOW NOISE HIGH LINEARITY PACKAGED PHEMT Original PDF
    FPD1500SOT89E Filtronic LOW NOISE HIGH LINEARITY PACKAGED PHEMT Original PDF

    FPD1500 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FPD1500

    Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
    Text: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a


    Original     		FPD1500DFN FPD1500DFN mx750 27dBm 85GHz 42dBm 85GHz) EB1500DFN-BA FPD1500 SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE PDF

    FPD1500SOT89

    Abstract: No abstract text available
    Text: FPD1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 27.5 dBm Output Power (P1dB) ♦ 17 dB Small-Signal Gain (SSG) ♦ 1.0 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


    Original     		FPD1500SOT89 FPD1500SOT89 FPD1500 PDF

    FPD1500SOT89

    Abstract: TRANSISTOR BC 252 IGD 507 an CAPACITOR 33PF FPD1500SOT89E filtronic Solid State 33id
    Text: FPD1500SOT89 Datasheet v2.4 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 27.5 dBm Output Power (P1dB) 17 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 50% Power-Added Efficiency FPD1500SOT89E - RoHS compliant


    Original     		FPD1500SOT89 1850MHZ) FPD1500SOT89E FPD1500SOT89 22-A114. EB1500SOT89 J-STD-020C, TRANSISTOR BC 252 IGD 507 an CAPACITOR 33PF filtronic Solid State 33id PDF

    SSG 23 TRANSISTOR

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD1500DFN FPD750SOT89 MIL-HDBK-263 Filtronic Compound Semiconductors
    Text: FPD1500DFN Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency RoHS compliant (Directive 2002/95/EC)


    Original     		FPD1500DFN 1850MHZ) 2002/95/EC) FPD1500DFN MIL-STD-1686 MIL-HDBK-263. EB1500DFN-BB 900MHz EB1500DFN-BA SSG 23 TRANSISTOR BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD750SOT89 MIL-HDBK-263 Filtronic Compound Semiconductors PDF

    FPD1500

    Abstract: MIL-HDBK-263 PAD130
    Text: FPD1500 1W POWER PHEMT Datasheet v2.1 FEATURES: • • • • • LAYOUT: 29 dBm Linear Output Power at 12 GHz 9 dB Power Gain at 12 GHz 12.5 dB Max Stable Gain at 12 GHz 41 dBm Output IP3 35% Power-Added Efficiency GENERAL DESCRIPTION: The FPD1500 is an


    Original     		FPD1500 FPD1500 22A114. MIL-STD-1686 MIL-HDBK-263. MIL-HDBK-263 PAD130 PDF

    FPD1500

    Abstract: MIL-HDBK-263 P100
    Text: FPD1500 1W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 29 dBm Linear Output Power at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 12.5 dB Maximum Stable Gain at 12 GHz ♦ 41 dBm Output IP3 ♦ 35% Power-Added Efficiency SOURCE BOND PAD (2x) GATE BOND


    Original     		FPD1500 FPD1500 MIL-HDBK-263 P100 PDF

    FPD1500SOT89CESR

    Abstract: FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263
    Text: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		FPD1500SOT89 FPD1500SOT8 FPD1500SOT89 25mx1500m 42dBm FPD1500SOT89E: FPD1500SOT89E FPD1500SOT89CE EB1500SOT89CE-BC FPD1500SOT89CESR FPD1500SOT89E MIL-HDBK-263 PDF

    FPD1500SOT89E

    Abstract: est 0114 FPD1500SOT89 MIL-HDBK-263
    Text: FPD1500SOT89E FPD1500SOT8 9E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89E is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm


    Original     		FPD1500SOT89E FPD1500SOT8 FPD1500SOT89E 25mx1500m FPD1500SOT89E: FPD1500SOT89PCK FPD1500SOT89ESQ FPD1500SOT89ESR est 0114 FPD1500SOT89 MIL-HDBK-263 PDF

    FPD1500SOT89

    Abstract: No abstract text available
    Text: Balanced EBD1500SOT89-AG FPD1500SOT89 2.5 - 2.6GHz LNA EVALUATION BOARD FEATURES Frequency GHz P1dB (dBm) SSG (dB) N.F. (dB) OIP3 (dBm) Bias 2.5 2.6 30.5 30.2 14.8 14.5 0.95 0.95 43.5 43.5 5V, 150mA DESCRIPTION AND APPLICATIONS The data given above is based on measurements taken on the evaluation board described


    Original     		EBD1500SOT89-AG FPD1500SOT89 150mA FPD1500SOT89; 120mA PDF

    FPD1500

    Abstract: FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263 TL11 TL12 TL13 transistor w10 18 transistor w10 Transistor W35
    Text: FPD1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT • PERFORMANCE 1850 MHz ♦ 27.5 dBm Output Power (P1dB) ♦ 17 dB Small-Signal Gain (SSG) ♦ 1.2 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


    Original     		FPD1500SOT89 FPD1500SOT89E FPD1500SOT89 EB1500SOT89AA 120mA. Revised11/11/05 FPD1500 FPD1500SOT89E MIL-HDBK-263 TL11 TL12 TL13 transistor w10 18 transistor w10 Transistor W35 PDF

    FPD1500SOT89CE

    Abstract: 4506 gh Transistor BJT 547 b fpd1500sot89cesr 1850G
    Text: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m


    Original     		FPD1500SOT8 FPD1500SOT89CE FPD1500SOT89CE mx1500 42dBm FPD1500SOT89CE: FPD1500SOT89CESQ FPD1500SOT89CESR FPD1500SOT89PCK 4506 gh Transistor BJT 547 b 1850G PDF

    Transistor AC 51 0865 75 834

    Abstract: No abstract text available
    Text: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m


    Original     		FPD1500SOT89CE FPD1500SOT8 FPD1500SOT89CE mx1500ï FPD1500SOT89CESR FPD1500SOT89PCK FPD1500SOT89CESQ 85GHz DS111103 Transistor AC 51 0865 75 834 PDF

    FPD1500

    Abstract: transistor A114 FPD1500 SOT89
    Text: FPD1500 Datasheet v3.0 1W POWER PHEMT LAYOUT: FEATURES: • • • • • 29 dBm Linear Output Power at 12 GHz 9 dB Power Gain at 12 GHz 12.5 dB Max Stable Gain at 12 GHz 41 dBm Output IP3 35% Power-Added Efficiency GENERAL DESCRIPTION: The FPD1500 is an


    Original     		FPD1500 FPD1500 22-A114. MIL-STD-1686 MILHDBK-263. transistor A114 FPD1500 SOT89 PDF

    FILTRONIC CROSS REFERENCE

    Abstract: SSG 23 TRANSISTOR FPD750SOT89 TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD1500DFN MIL-HDBK-263 Filtronic Compound Semiconductors
    Text: FPD1500DFN Datasheet v2.3 LOW NOISE HIGH LINEARITY PACKAGED PHEMT FEATURES 1850MHZ : • • • • • • RoHS PACKAGE: 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency 9 FPD1500DFN - RoHS compliant


    Original     		FPD1500DFN 1850MHZ) FPD1500DFN MIL-STD-1686 MIL-HDBK-263. EB1500DFN-BB 900MHz EB1500DFN-BA FILTRONIC CROSS REFERENCE SSG 23 TRANSISTOR FPD750SOT89 TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB MIL-HDBK-263 Filtronic Compound Semiconductors PDF

    Filtronic Components

    Abstract: FPD1500 FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263 J37 transistor
    Text: FPD1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 27.5 dBm Output Power (P1dB) ♦ 17 dB Small-Signal Gain (SSG) ♦ 1.2 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


    Original     		FPD1500SOT89 FPD1500SOT89E FPD1500SOT89 EB1500SOT89AA 120mA. Filtronic Components FPD1500 FPD1500SOT89E MIL-HDBK-263 J37 transistor PDF

    FPD1500SOT89

    Abstract: FPD1500 MIL-HDBK-263 J370
    Text: FPD1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 27.5 dBm Output Power (P1dB) ♦ 17 dB Small-Signal Gain (SSG) ♦ 1.2 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


    Original     		FPD1500SOT89 FPD1500SOT89 FPD1500 EB1500SOT89AA 120mA. MIL-HDBK-263 J370 PDF

    Untitled

    Abstract: No abstract text available
    Text: FPD1500 FPD15001W Power pHEMT 1W POWER pHEMT Package Style: Bare Die Product Description Features The FPD1500 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx1500μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes


    Original     		FPD1500 FPD15001W FPD1500 mx1500Î 29dBm 12GHz 41dBm PDF

    FPD1500SOT89

    Abstract: Toko inductor
    Text: EB1500SOT89BB FPD1500SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • 27dBm Output Power • 20dB Gain ¥ 0.7dB Noise Figure ¥ 39dBm OIP3 @ 15dBm Pout per tone ¥ Bias Vd = 5V, Id = 200mA, Vg = -0.5V ~ -0.7V DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively


    Original     		EB1500SOT89BB FPD1500SOT89 27dBm 39dBm 15dBm 200mA, FPD1500SOT89; 1500m 30mil LL1608 Toko inductor PDF

    ro4003

    Abstract: FPD1500SOT89 RO-4003 5.8ghz
    Text: EB1500SOT89AJ FPD1500SOT89 5.2GHz TO 5.8GHz EVALUATION BOARD FEATURES • 26dBm Output Power • 10dB Gain ¥ 1.6dB Noise Figure @ 5V, 200mA ¥ 42dBm OIP3 ¥ SOT89 Surface Mount Package DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively


    Original     		EB1500SOT89AJ FPD1500SOT89 26dBm 200mA 42dBm 85GHz. FPD1500SOT89; 1500m 20mil RO4003 RO-4003 5.8ghz PDF

    FPD1500

    Abstract: No abstract text available
    Text: FPD1500 TOM3 and TOM2 Models 27/01/2005 Modelling Report FPD1500 TOM3 and TOM2 Models Version 1.0 - Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. 1 FPD1500 TOM3 and TOM2 Models 27/01/2005 Introduction This report describes the models for the FPD1500 discrete p-HEMT device. The


    Original     		FPD1500 18GHz PDF

    FPD1500SOT89

    Abstract: FPD1500SOT89E MIL-HDBK-263 FPD1500SOT89CE 4506 gh
    Text: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		FPD1500SOT89 FPD1500SOT8 FPD1500SOT89 25mx1500m 42dBm FPD1500SOT89E: FPD1500SOT89CESR FPD1500SOT89CESQ FPD1500SOT89CESB DS090612 FPD1500SOT89E MIL-HDBK-263 FPD1500SOT89CE 4506 gh PDF

    FPD1500DFN

    Abstract: FPD1500SOT89 MIL-HDBK-263
    Text: FPD1500DFN LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT • PERFORMANCE 1850 MHz ♦ 27 dBm Output Power (P1dB) ♦ 18 dB Small-Signal Gain (SSG) ♦ 1.2 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Featuring Lead Free Finish Package


    Original     		FPD1500DFN FPD1500DFN FPD1500SOT89 MIL-HDBK-263 PDF

    FPD1500SOT89

    Abstract: FPD1500SOT89E 09DB FPD1500SOT89CE
    Text: FPD1500SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 27.5 dBm Output Power (P1dB) 17 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 50% Power-Added Efficiency FPD1500SOT89E - RoHS compliant


    Original     		FPD1500SOT89 1850MHZ) FPD1500SOT89E FPD1500SOT89 22-A114. EB1500SOT89 J-STD-020C, 09DB FPD1500SOT89CE PDF

    FPD1500DFN

    Abstract: FPD750SOT89 MIL-HDBK-263 EB1500DFN-BA EB1500DFN-BB Filtronic Compound Semiconductors
    Text: FPD1500DFN Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT FEATURES 1850MHZ : • • • • • • RoHS PACKAGE: 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency 9 FPD1500DFN - RoHS compliant


    Original     		FPD1500DFN 1850MHZ) FPD1500DFN MIL-STD-1686 MIL-HDBK-263. EB1500DFN-BB 900MHz EB1500DFN-BA FPD750SOT89 MIL-HDBK-263 EB1500DFN-BA EB1500DFN-BB Filtronic Compound Semiconductors PDF