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    RJP3 Search Results

    RJP3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJP3056DPP-00#T2 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT) Visit Renesas Electronics Corporation
    RJP30E3DPK-M0#T0 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT) Visit Renesas Electronics Corporation
    RJP3055DPP-00#T2 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT) Visit Renesas Electronics Corporation
    RJP30E2DPP-M0#T2 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT), TO-220FL, /Tube Visit Renesas Electronics Corporation
    RJP3057DPK#T0 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT) Visit Renesas Electronics Corporation
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    RJP3 Price and Stock

    Rochester Electronics LLC RJP30L4DPE-00#J3

    IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJP30L4DPE-00#J3 Bulk 194,900 163
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    Rochester Electronics LLC RJP30H1DPP-M1#T2

    IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJP30H1DPP-M1#T2 Bulk 9,068 163
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    Rochester Electronics LLC RJP30E2DPK-M0#T0

    IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJP30E2DPK-M0#T0 Bulk 6,515 38
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    Rochester Electronics LLC RJP3034DPP-90#T2F

    HIGH SPEED IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJP3034DPP-90#T2F Bulk 500 136
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    Rochester Electronics LLC RJP3049DPK-80#T2

    HIGH SPEED IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJP3049DPK-80#T2 Bulk 54
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    Find more RJP3 price and stock on Findchips.com

    RJP3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO-220FL

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E3DPP-M0 R07DS0353EJ0200 O-220FL PRSS0003AF-A) O-220FL) TO-220FL

    rjp30

    Abstract: RJP30E
    Text: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E3DPP-M0 R07DS0353EJ0200 O-220FL PRSS0003AF-A) O-220FL) rjp30 RJP30E

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30H2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ


    Original     		PDF RJP30H2DPK-M0 R07DS0467EJ0200 PRSS0004ZH-A

    RJP30h1

    Abstract: rjp30H RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT High Speed Power Switching
    Text: Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series High speed switching: tr = 80 ns typ., tf = 150 ns typ.


    Original     		PDF RJP30H1DPD R07DS0465EJ0200 PRSS0004ZJ-A O-252) RJP30h1 rjp30H RJP30H1DPD Silicon N Channel IGBT High Speed Power Switching

    RJP30E3

    Abstract: rjp30e3dpk RJP30e
    Text: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E3DPK-M0 R07DS0352EJ0200 PRSS0004ZH-A RJP30E3 rjp30e3dpk RJP30e

    RJP30E3

    Abstract: RJP30e rjp30 RJP30E3DPP-M0 rjp30e3dpp rjp*30
    Text: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E3DPP-M0 O-220FL R07DS0353EJ0200 PRSS0003AF-A) O-220FL) RJP30E3 RJP30e rjp30 RJP30E3DPP-M0 rjp30e3dpp rjp*30

    RJP30K3

    Abstract: RJp30K RJP30K3DPP-M0 rjp30k3dpp TEST68 rjp30
    Text: Preliminary Datasheet RJP30K3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0501EJ0100 Rev.1.00 Jul 05, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage VCE(sat) = 1.1V typ


    Original     		PDF RJP30K3DPP-M0 O-220FL R07DS0501EJ0100 PRSS0003AF-A) O-220FL) RJP30K3 RJp30K RJP30K3DPP-M0 rjp30k3dpp TEST68 rjp30

    RJP30H1DPD

    Abstract: rjp30h1 rjp30 rjp30H
    Text: Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series High speed switching: tr = 80 ns typ., tf = 150 ns typ.


    Original     		PDF RJP30H1DPD R07DS0465EJ0200 PRSS0004ZJ-A O-252) RJP30H1DPD rjp30h1 rjp30 rjp30H

    PRSS0003AF-A

    Abstract: RJP30H1 rjp30H
    Text: Preliminary Datasheet RJP30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0466EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.


    Original     		PDF RJP30H1DPP-M0 R07DS0466EJ0200 O-220FL PRSS0003AF-A) O-220FL) PRSS0003AF-A RJP30H1 rjp30H

    rjp30h1

    Abstract: rjp30H RJP30H1DPP RJP30H1DPP-M0 rjp30
    Text: Preliminary Datasheet RJP30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0466EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.


    Original     		PDF RJP30H1DPP-M0 O-220FL R07DS0466EJ0200 PRSS0003AF-A) O-220FL) rjp30h1 rjp30H RJP30H1DPP RJP30H1DPP-M0 rjp30

    rjp30e2

    Abstract: rjp30e2dpp RJP30E2DPp-M0 RJP30e PRSS0003AF-A r07ds0347ej Rjp30 R07DS0347EJ0200
    Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E2DPP-M0 O-220FL R07DS0347EJ0200 PRSS0003AF-A) O-220FL) rjp30e2 rjp30e2dpp RJP30E2DPp-M0 RJP30e PRSS0003AF-A r07ds0347ej Rjp30

    rjp30e2

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E2DPK-M0 R07DS0348EJ0100 PRSS0004ZH-A rjp30e2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E3DPK-M0 R07DS0352EJ0200 PRSS0004ZH-A

    RJP30E2

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E2DPK-M0 R07DS0348EJ0100 PRSS0004ZH-A RJP30E2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E2DPP-M0 R07DS0347EJ0200 O-220FL PRSS0003AF-A) O-220FL)

    RJP30E3

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E3DPK-M0 R07DS0352EJ0200 PRSS0004ZH-A RJP30E3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E2DPP-M0 R07DS0347EJ0200 O-220FL PRSS0003AF-A) O-220FL)

    RJP30H2

    Abstract: rjp30h RJP30H2D RJP30H2dpk R07DS0467EJ0200 Rjp30
    Text: Preliminary Datasheet RJP30H2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ


    Original     		PDF RJP30H2DPK-M0 R07DS0467EJ0200 PRSS0004ZH-A RJP30H2 rjp30h RJP30H2D RJP30H2dpk Rjp30

    rjp30e2

    Abstract: rjp30e2dpk RJP30e RJP30E2DPK-M0 Rjp30 PRSS0004ZH-A APR12 RJP30E2DPK-M0-T0 rjp-30e2
    Text: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E2DPK-M0 R07DS0348EJ0100 PRSS0004ZH-A rjp30e2 rjp30e2dpk RJP30e RJP30E2DPK-M0 Rjp30 PRSS0004ZH-A APR12 RJP30E2DPK-M0-T0 rjp-30e2

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    transistor RJp 30

    Abstract: RJP3 transistor RJp 2Ghz mixer
    Text: Tem ic U 2795 B-FP TELEFUNKEN Semiconductors 2-GHz Double Balanced Mixer Description U 2795 B is a 2-GHz mixer for R F telecom munications equipm ent, e.g. D E C T and PCN, built with T E L E FU N K E N ’s advanced bipolar technology. A double balanced approach was chosen to assure


    OCR Scan     		PDF D-74025 transistor RJp 30 RJP3 transistor RJp 2Ghz mixer