RJP3 Search Results

RJP3 Result Highlights (5)

Part	Manufacturer	Description
RJP3056DPP-00#T2	Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT)
RJP30E3DPK-M0#T0	Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT)
RJP3055DPP-00#T2	Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT)
RJP30E2DPP-M0#T2	Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT), TO-220FL, /Tube
RJP3057DPK#T0	Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT)

RJP3 Price and Stock

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Rochester Electronics LLC RJP3047DPK-80-T2 HIGH SPEED IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP3047DPK-80-T2	Bulk			77	1 - 10 - 100 $3.9 1000 $3.9 10000 $3.9	Buy Now
Rochester Electronics LLC RJP3082DPP-00-T2 HIGH SPEED IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP3082DPP-00-T2	Bulk			166	1 - 10 - 100 - 1000 $1.81 10000 $1.81	Buy Now
Rochester Electronics LLC RJP30E2DPK-M0-T0 IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP30E2DPK-M0-T0	Bulk			38	1 - 10 - 100 $8.08 1000 $8.08 10000 $8.08	Buy Now
Rochester Electronics LLC RJP3049DPK-80-T2 HIGH SPEED IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP3049DPK-80-T2	Bulk			54	1 - 10 - 100 $5.61 1000 $5.61 10000 $5.61	Buy Now
Rochester Electronics LLC RJP30H1DPP-MZ-T2 IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP30H1DPP-MZ-T2	Bulk			163	1 - 10 - 100 - 1000 $1.85 10000 $1.85	Buy Now

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RJP3 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TO-220FL Abstract: No abstract text available Text: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ	Original	RJP30E3DPP-M0 R07DS0353EJ0200 O-220FL PRSS0003AF-A) O-220FL) TO-220FL	PDF
rjp30 Abstract: RJP30E Text: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ	Original	RJP30E3DPP-M0 R07DS0353EJ0200 O-220FL PRSS0003AF-A) O-220FL) rjp30 RJP30E	PDF
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP30H2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ	Original	RJP30H2DPK-M0 R07DS0467EJ0200 PRSS0004ZH-A	PDF
RJP30h1 Abstract: rjp30H RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT High Speed Power Switching Text: Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series High speed switching: tr = 80 ns typ., tf = 150 ns typ.	Original	RJP30H1DPD R07DS0465EJ0200 PRSS0004ZJ-A O-252) RJP30h1 rjp30H RJP30H1DPD Silicon N Channel IGBT High Speed Power Switching	PDF
RJP30E3 Abstract: rjp30e3dpk RJP30e Text: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ	Original	RJP30E3DPK-M0 R07DS0352EJ0200 PRSS0004ZH-A RJP30E3 rjp30e3dpk RJP30e	PDF
RJP30E3 Abstract: RJP30e rjp30 RJP30E3DPP-M0 rjp30e3dpp rjp*30 Text: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ	Original	RJP30E3DPP-M0 O-220FL R07DS0353EJ0200 PRSS0003AF-A) O-220FL) RJP30E3 RJP30e rjp30 RJP30E3DPP-M0 rjp30e3dpp rjp*30	PDF
RJP30K3 Abstract: RJp30K RJP30K3DPP-M0 rjp30k3dpp TEST68 rjp30 Text: Preliminary Datasheet RJP30K3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0501EJ0100 Rev.1.00 Jul 05, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage VCE(sat) = 1.1V typ	Original	RJP30K3DPP-M0 O-220FL R07DS0501EJ0100 PRSS0003AF-A) O-220FL) RJP30K3 RJp30K RJP30K3DPP-M0 rjp30k3dpp TEST68 rjp30	PDF
RJP30H1DPD Abstract: rjp30h1 rjp30 rjp30H Text: Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series High speed switching: tr = 80 ns typ., tf = 150 ns typ.	Original	RJP30H1DPD R07DS0465EJ0200 PRSS0004ZJ-A O-252) RJP30H1DPD rjp30h1 rjp30 rjp30H	PDF
PRSS0003AF-A Abstract: RJP30H1 rjp30H Text: Preliminary Datasheet RJP30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0466EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.	Original	RJP30H1DPP-M0 R07DS0466EJ0200 O-220FL PRSS0003AF-A) O-220FL) PRSS0003AF-A RJP30H1 rjp30H	PDF
rjp30h1 Abstract: rjp30H RJP30H1DPP RJP30H1DPP-M0 rjp30 Text: Preliminary Datasheet RJP30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0466EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.	Original	RJP30H1DPP-M0 O-220FL R07DS0466EJ0200 PRSS0003AF-A) O-220FL) rjp30h1 rjp30H RJP30H1DPP RJP30H1DPP-M0 rjp30	PDF
rjp30e2 Abstract: rjp30e2dpp RJP30E2DPp-M0 RJP30e PRSS0003AF-A r07ds0347ej Rjp30 R07DS0347EJ0200 Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	RJP30E2DPP-M0 O-220FL R07DS0347EJ0200 PRSS0003AF-A) O-220FL) rjp30e2 rjp30e2dpp RJP30E2DPp-M0 RJP30e PRSS0003AF-A r07ds0347ej Rjp30	PDF
rjp30e2 Abstract: No abstract text available Text: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	RJP30E2DPK-M0 R07DS0348EJ0100 PRSS0004ZH-A rjp30e2	PDF
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ	Original	RJP30E3DPK-M0 R07DS0352EJ0200 PRSS0004ZH-A	PDF
RJP30E2 Abstract: No abstract text available Text: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	RJP30E2DPK-M0 R07DS0348EJ0100 PRSS0004ZH-A RJP30E2	PDF

Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	RJP30E2DPP-M0 R07DS0347EJ0200 O-220FL PRSS0003AF-A) O-220FL)	PDF
RJP30E3 Abstract: No abstract text available Text: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ	Original	RJP30E3DPK-M0 R07DS0352EJ0200 PRSS0004ZH-A RJP30E3	PDF
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	RJP30E2DPP-M0 R07DS0347EJ0200 O-220FL PRSS0003AF-A) O-220FL)	PDF
RJP30H2 Abstract: rjp30h RJP30H2D RJP30H2dpk R07DS0467EJ0200 Rjp30 Text: Preliminary Datasheet RJP30H2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ	Original	RJP30H2DPK-M0 R07DS0467EJ0200 PRSS0004ZH-A RJP30H2 rjp30h RJP30H2D RJP30H2dpk Rjp30	PDF
rjp30e2 Abstract: rjp30e2dpk RJP30e RJP30E2DPK-M0 Rjp30 PRSS0004ZH-A APR12 RJP30E2DPK-M0-T0 rjp-30e2 Text: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	RJP30E2DPK-M0 R07DS0348EJ0100 PRSS0004ZH-A rjp30e2 rjp30e2dpk RJP30e RJP30E2DPK-M0 Rjp30 PRSS0004ZH-A APR12 RJP30E2DPK-M0-T0 rjp-30e2	PDF
RJP63k2 Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching	Original	R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606	PDF
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055	PDF
RJJ0319DSP Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?	Original	R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram	PDF
rjp6065 Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance	Original		PDF
transistor RJp 30 Abstract: RJP3 transistor RJp 2Ghz mixer Text: Tem ic U 2795 B-FP TELEFUNKEN Semiconductors 2-GHz Double Balanced Mixer Description U 2795 B is a 2-GHz mixer for R F telecom munications equipm ent, e.g. D E C T and PCN, built with T E L E FU N K E N ’s advanced bipolar technology. A double balanced approach was chosen to assure	OCR Scan	D-74025 transistor RJp 30 RJP3 transistor RJp 2Ghz mixer	PDF

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RJP3 Search Results

RJP3 Result Highlights (5)

RJP3 Price and Stock

Rochester Electronics LLC RJP3047DPK-80-T2

Rochester Electronics LLC RJP3082DPP-00-T2

Rochester Electronics LLC RJP30E2DPK-M0-T0

Rochester Electronics LLC RJP3049DPK-80-T2

Rochester Electronics LLC RJP30H1DPP-MZ-T2

RJP3 Datasheets Context Search

TO-220FL

rjp30

Untitled

RJP30h1

RJP30E3

RJP30E3

RJP30K3

RJP30H1DPD

PRSS0003AF-A

rjp30h1

rjp30e2

rjp30e2

Untitled

RJP30E2

Untitled

RJP30E3

Untitled

RJP30H2

rjp30e2

RJP63k2

rjh3047

RJJ0319DSP

rjp6065

transistor RJp 30