Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    R07DS0467EJ0200 Search Results

    R07DS0467EJ0200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30H2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ


    Original     		PDF RJP30H2DPK-M0 R07DS0467EJ0200 PRSS0004ZH-A

    RJP30H2

    Abstract: rjp30h RJP30H2D RJP30H2dpk R07DS0467EJ0200 Rjp30
    Text: Preliminary Datasheet RJP30H2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ


    Original     		PDF RJP30H2DPK-M0 R07DS0467EJ0200 PRSS0004ZH-A RJP30H2 rjp30h RJP30H2D RJP30H2dpk Rjp30