Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    R07DS0501EJ0100 Search Results

    R07DS0501EJ0100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RJP30K3

    Abstract: RJp30K RJP30K3DPP-M0 rjp30k3dpp TEST68 rjp30
    Text: Preliminary Datasheet RJP30K3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0501EJ0100 Rev.1.00 Jul 05, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage VCE(sat) = 1.1V typ


    Original     		PDF RJP30K3DPP-M0 O-220FL R07DS0501EJ0100 PRSS0003AF-A) O-220FL) RJP30K3 RJp30K RJP30K3DPP-M0 rjp30k3dpp TEST68 rjp30

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30K3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0501EJ0100 Rev.1.00 Jul 05, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage VCE(sat) = 1.1V typ


    Original     		PDF RJP30K3DPP-M0 R07DS0501EJ0100 O-220FL PRSS0003AF-A) O-220FL)