Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RJP30H1DPP Search Results

    RJP30H1DPP Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RJP30H1DPP-M0#T2 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT) Visit Renesas Electronics Corporation
    SF Impression Pixel

    RJP30H1DPP Price and Stock

    Rochester Electronics LLC RJP30H1DPP-M1-T2

    IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJP30H1DPP-M1-T2 Bulk 9,068 163
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.85
    • 10000 $1.85
    		Buy Now

    Rochester Electronics LLC RJP30H1DPP-M9-T2

    IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJP30H1DPP-M9-T2 Bulk 6,058 163
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.85
    • 10000 $1.85
    		Buy Now

    Rochester Electronics LLC RJP30H1DPP-MZ-T2

    IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJP30H1DPP-MZ-T2 Bulk 2,777 163
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.85
    • 10000 $1.85
    		Buy Now

    Renesas Electronics Corporation RJP30H1DPP-M1#T2

    Insulated Gate Bipolar Transistor '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RJP30H1DPP-M1#T2 9,068 1
    • 1 $1.78
    • 10 $1.78
    • 100 $1.67
    • 1000 $1.51
    • 10000 $1.51
    		Buy Now

    Renesas Electronics Corporation RJP30H1DPP-M9#T2

    Insulated Gate Bipolar Transistor '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RJP30H1DPP-M9#T2 6,058 1
    • 1 $1.78
    • 10 $1.78
    • 100 $1.67
    • 1000 $1.51
    • 10000 $1.51
    		Buy Now
    Find more RJP30H1DPP price and stock on Findchips.com

    RJP30H1DPP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PRSS0003AF-A

    Abstract: RJP30H1 rjp30H
    Text: Preliminary Datasheet RJP30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0466EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.


    Original     		PDF RJP30H1DPP-M0 R07DS0466EJ0200 O-220FL PRSS0003AF-A) O-220FL) PRSS0003AF-A RJP30H1 rjp30H

    rjp30h1

    Abstract: rjp30H RJP30H1DPP RJP30H1DPP-M0 rjp30
    Text: Preliminary Datasheet RJP30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0466EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.


    Original     		PDF RJP30H1DPP-M0 O-220FL R07DS0466EJ0200 PRSS0003AF-A) O-220FL) rjp30h1 rjp30H RJP30H1DPP RJP30H1DPP-M0 rjp30