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    RJP30H1DPD Search Results

    RJP30H1DPD Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    RJP30H1DPD-00#Q2 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT) Visit Renesas Electronics Corporation
    RJP30H1DPD-00#J2 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT) Visit Renesas Electronics Corporation
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    RJP30H1DPD Price and Stock

    Rochester Electronics LLC RJP30H1DPD-A0-Q2

    IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJP30H1DPD-A0-Q2 Bulk 8,437 204
    • 1 -
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    • 100 -
    • 1000 $1.48
    • 10000 $1.48
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    Renesas Electronics Corporation RJP30H1DPD-A0#Q2

    Insulated Gate Bipolar Transistor '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RJP30H1DPD-A0#Q2 8,437 1
    • 1 $1.42
    • 10 $1.42
    • 100 $1.33
    • 1000 $1.21
    • 10000 $1.21
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    RJP30H1DPD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RJP30h1

    Abstract: rjp30H RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT High Speed Power Switching
    Text: Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series High speed switching: tr = 80 ns typ., tf = 150 ns typ.


    Original     		PDF RJP30H1DPD R07DS0465EJ0200 PRSS0004ZJ-A O-252) RJP30h1 rjp30H RJP30H1DPD Silicon N Channel IGBT High Speed Power Switching

    RJP30H1DPD

    Abstract: rjp30h1 rjp30 rjp30H
    Text: Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series High speed switching: tr = 80 ns typ., tf = 150 ns typ.


    Original     		PDF RJP30H1DPD R07DS0465EJ0200 PRSS0004ZJ-A O-252) RJP30H1DPD rjp30h1 rjp30 rjp30H