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    RJP30E Search Results

    RJP30E Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    RJP30E3DPK-M0#T0 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT) Visit Renesas Electronics Corporation
    RJP30E2DPP-M0#T2 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT), TO-220FL, /Tube Visit Renesas Electronics Corporation
    RJP30E3DPP-M0#T2 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT), TO-220FL, /Tube Visit Renesas Electronics Corporation
    RJP30E2DPK-M0#T0 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT), TO-3PSG, /Tube Visit Renesas Electronics Corporation
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    RJP30E Price and Stock

    Rochester Electronics LLC RJP30E2DPP-M0#T2

    IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJP30E2DPP-M0#T2 Bulk 18,811 38
    • 1 -
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    • 100 $8.08
    • 1000 $8.08
    • 10000 $8.08
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    Rochester Electronics LLC RJP30E4DPE-00#J3

    IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJP30E4DPE-00#J3 Bulk 10,000 107
    • 1 -
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    • 100 -
    • 1000 $2.81
    • 10000 $2.81
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    Rochester Electronics LLC RJP30E2DPK-M0#T0

    IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJP30E2DPK-M0#T0 Bulk 6,515 38
    • 1 -
    • 10 -
    • 100 $8.08
    • 1000 $8.08
    • 10000 $8.08
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    Rochester Electronics LLC RJP30E3DPK-M2#T0

    IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJP30E3DPK-M2#T0 Bulk 28
    • 1 -
    • 10 -
    • 100 $11.1
    • 1000 $11.1
    • 10000 $11.1
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    Rochester Electronics LLC RJP30E3DPP-M0#T2

    IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJP30E3DPP-M0#T2 Bulk 98
    • 1 -
    • 10 -
    • 100 $3.07
    • 1000 $3.07
    • 10000 $3.07
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    Find more RJP30E price and stock on Findchips.com

    RJP30E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rjp30e2

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E2DPK-M0 R07DS0348EJ0100 PRSS0004ZH-A rjp30e2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E3DPK-M0 R07DS0352EJ0200 PRSS0004ZH-A

    RJP30E2

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E2DPK-M0 R07DS0348EJ0100 PRSS0004ZH-A RJP30E2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E2DPP-M0 R07DS0347EJ0200 O-220FL PRSS0003AF-A) O-220FL)

    RJP30E3

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E3DPK-M0 R07DS0352EJ0200 PRSS0004ZH-A RJP30E3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E2DPP-M0 R07DS0347EJ0200 O-220FL PRSS0003AF-A) O-220FL)

    rjp30e2

    Abstract: rjp30e2dpk RJP30e RJP30E2DPK-M0 Rjp30 PRSS0004ZH-A APR12 RJP30E2DPK-M0-T0 rjp-30e2
    Text: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E2DPK-M0 R07DS0348EJ0100 PRSS0004ZH-A rjp30e2 rjp30e2dpk RJP30e RJP30E2DPK-M0 Rjp30 PRSS0004ZH-A APR12 RJP30E2DPK-M0-T0 rjp-30e2