Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    R07DS0352EJ0200 Search Results

    R07DS0352EJ0200 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RJP30E3

    Abstract: rjp30e3dpk RJP30e
    Text: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ


    Original     		RJP30E3DPK-M0 R07DS0352EJ0200 PRSS0004ZH-A RJP30E3 rjp30e3dpk RJP30e PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ


    Original     		RJP30E3DPK-M0 R07DS0352EJ0200 PRSS0004ZH-A PDF

    RJP30E3

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ


    Original     		RJP30E3DPK-M0 R07DS0352EJ0200 PRSS0004ZH-A RJP30E3 PDF