RJP30E2DPP Search Results

RJP30E2DPP Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJP30E2DPP-M0#T2		Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT), TO-220FL, /Tube

RJP30E2DPP Price and Stock

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Rochester Electronics LLC RJP30E2DPP-M0-T2 IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP30E2DPP-M0-T2	Bulk			38	1 - 10 - 100 $8.08 1000 $8.08 10000 $8.08	Buy Now
Renesas Electronics Corporation RJP30E2DPP-M0#T2 Insulated Gate Bipolar Transistor '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RJP30E2DPP-M0#T2		18,811		1	1 $7.77 10 $7.77 100 $7.3 1000 $6.6 10000 $6.6	Buy Now

RJP30E2DPP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
rjp30e2 Abstract: rjp30e2dpp RJP30E2DPp-M0 RJP30e PRSS0003AF-A r07ds0347ej Rjp30 R07DS0347EJ0200 Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	RJP30E2DPP-M0 O-220FL R07DS0347EJ0200 PRSS0003AF-A) O-220FL) rjp30e2 rjp30e2dpp RJP30E2DPp-M0 RJP30e PRSS0003AF-A r07ds0347ej Rjp30	PDF
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	RJP30E2DPP-M0 R07DS0347EJ0200 O-220FL PRSS0003AF-A) O-220FL)	PDF
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	RJP30E2DPP-M0 R07DS0347EJ0200 O-220FL PRSS0003AF-A) O-220FL)	PDF
RJP63k2 Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching	Original	R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606	PDF
RJJ0319DSP Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?	Original	R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram	PDF