Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RJP30E2 Search Results

    RJP30E2 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    RJP30E2DPP-M0#T2 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT), TO-220FL, /Tube Visit Renesas Electronics Corporation
    RJP30E2DPK-M0#T0 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT), TO-3PSG, /Tube Visit Renesas Electronics Corporation
    SF Impression Pixel

    RJP30E2 Price and Stock

    Rochester Electronics LLC RJP30E2DPP-M0#T2

    IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJP30E2DPP-M0#T2 Bulk 18,811 38
    • 1 -
    • 10 -
    • 100 $8.08
    • 1000 $8.08
    • 10000 $8.08
    		Buy Now

    Rochester Electronics LLC RJP30E2DPK-M0#T0

    IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJP30E2DPK-M0#T0 Bulk 6,515 38
    • 1 -
    • 10 -
    • 100 $8.08
    • 1000 $8.08
    • 10000 $8.08
    		Buy Now

    Renesas Electronics Corporation RJP30E2DPK-M0#T0

    Insulated Gate Bipolar Transistor '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RJP30E2DPK-M0#T0 6,515 1
    • 1 $8.16
    • 10 $8.16
    • 100 $7.67
    • 1000 $6.93
    • 10000 $6.93
    		Buy Now

    Renesas Electronics Corporation RJP30E2DPP-M0#T2

    Insulated Gate Bipolar Transistor '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RJP30E2DPP-M0#T2 18,811 1
    • 1 $8.16
    • 10 $8.16
    • 100 $7.67
    • 1000 $6.93
    • 10000 $6.93
    		Buy Now

    RJP30E2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rjp30e2

    Abstract: rjp30e2dpp RJP30E2DPp-M0 RJP30e PRSS0003AF-A r07ds0347ej Rjp30 R07DS0347EJ0200
    Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E2DPP-M0 O-220FL R07DS0347EJ0200 PRSS0003AF-A) O-220FL) rjp30e2 rjp30e2dpp RJP30E2DPp-M0 RJP30e PRSS0003AF-A r07ds0347ej Rjp30

    rjp30e2

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E2DPK-M0 R07DS0348EJ0100 PRSS0004ZH-A rjp30e2

    RJP30E2

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E2DPK-M0 R07DS0348EJ0100 PRSS0004ZH-A RJP30E2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E2DPP-M0 R07DS0347EJ0200 O-220FL PRSS0003AF-A) O-220FL)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E2DPP-M0 R07DS0347EJ0200 O-220FL PRSS0003AF-A) O-220FL)

    rjp30e2

    Abstract: rjp30e2dpk RJP30e RJP30E2DPK-M0 Rjp30 PRSS0004ZH-A APR12 RJP30E2DPK-M0-T0 rjp-30e2
    Text: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E2DPK-M0 R07DS0348EJ0100 PRSS0004ZH-A rjp30e2 rjp30e2dpk RJP30e RJP30E2DPK-M0 Rjp30 PRSS0004ZH-A APR12 RJP30E2DPK-M0-T0 rjp-30e2

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram