KM44C1000C
Abstract: No abstract text available
Text: KM44C1OOOC/CL/CSL CMOS DRAM 1M x4B it CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000C/CUCSL is a high speed C M O S 1,0 4 8 ,5 7 6 x 4 D yn a m ic R and om A cce ss Memory. Its design is optimized for high performance
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KM44C1OOOC/CL/CSL
KM44C1000C/CUCSL
KM44C1000C/CL/CSL-5
KM44C1000C/CL/CSL-6
KM44C1000C/CL/CSL-7
130ns
KM44C1000C/CL/CSL-8
150ns
7TL4142
KM44C1000C
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Untitled
Abstract: No abstract text available
Text: KM44C1000C, KM44V1000C CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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KM44C1000C,
KM44V1000C
1024cycles
G231tic
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KM44C1000C
Abstract: KM44C1000CZ
Text: CMOS DRAM KM44C1OOOC/CL/CSL 1M x 4 B it CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tnc KM44C1000C/CL7CSL-5 50ns 13ns 90ns KM44C1000C/CL/CSL-6 60ns 15ns 110ns KM44C1000C/CL/CSL-7 70ns 20ns 130ns KM44C1000C/CUCSL-8
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KM44C1OOOC/CL/CSL
KM44C1000C/CL7CSL-5
KM44C1000C/CL/CSL-6
KM44C1000C/CL/CSL-7
KM44C1000C/CUCSL-8
110ns
130ns
150ns
KM44C1000C/CL/CSL
KM44C1000C/CLVCSL
KM44C1000C
KM44C1000CZ
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KM44C1000C
Abstract: a9lc KM44V1000C samsung 470 uf 50v
Text: KM44C1000C, KM44V1OOOC CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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KM44C1000C,
KM44V1OOOC
1024cycles
7TL4142
002D174
KM44C1000C
a9lc
KM44V1000C
samsung 470 uf 50v
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KM44C1000CJ
Abstract: KMM5361000C
Text: DRAM MODULE 4 Mega Byte KMM5361000C2/C2G Fast Page Mode 1Mx36 DRAM SIMM Using Parity PLCC, 5V G EN E R A L D ESCRIPTIO N FEATURES The Samsung KMM5361000C2 is a 1M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5361000C2 consists of eight CMOS
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KMM5361000C2/C2G
1Mx36
KMM5361000C2
20-pin
18-pin
72-pin
KM44C1000CJ
KMM5361000C
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KM44C4000aS 6
Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6
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KM41C4000C-5
KM41C4000CL-5
KM41C4002C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000CL-7
KM41C4002C-7
KM41V4000C-7
KM41V4000CL-7
KM41C4000C-8
KM44C4000aS 6
KM44C4000AS
KM44C4000A-S
km44c4100as
KM48V2100AL
KM416V256BL
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Untitled
Abstract: No abstract text available
Text: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23
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KM41C1000D
KM44C256D.
KM41C4000C
KM41V4000C.
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23C1001
Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
256Kx4
KM44C256C-6
KM44C256CL-6
KM44C256CL-7
44C256CL-8
KM44C256CSL-6
23C1001
KMM5334100
km 23c 4000B
KMM5362003C
KM681001-25
KM68V257
KM428V256
23c4001
4100C
M681000
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KM418C256
Abstract: KM48C2100AL KM416C254 KM44V4100AL KM44C1003
Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE DRAM Density 1M bil Org. 1Mx1 Power Supply 5V±10% Part Number KM41C1000D# Speed(ns) 60/70/80 Features Fast Page 5V±10% KM44C256D# 60/70/80 Fast Page 4Mx1 5V±10% KM41C4000C# 50/60/70/80 Fast Page KM41C4002C# 60/70/80
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KM41C1000D#
KM41C10OOD-L#
256Kx4)
256Kx4
KM44C256D#
KM44C256D-L#
KM41C4000C#
KM41C4000CL#
KM41C4002C#
KM41V4000C#
KM418C256
KM48C2100AL
KM416C254
KM44V4100AL
KM44C1003
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km44c1000cj
Abstract: No abstract text available
Text: / DRAM MODULE 8 Mega Byte KMM5362000C2/C2G Fast Page Mode 2Mx36 DRAM SIMM Using Parity PLCC, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5362000C2 is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362000C2 consists ot sixteen CMOS
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KMM5362000C2/C2G
2Mx36
KMM5362000C2
20-pin
18-pin
72-pin
km44c1000cj
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1mx1 DRAM DIP
Abstract: KM44V1000C KM41V4000CL
Text: FUNCTION GUIDE MEMORY ICS DRAM For Reference Org. Density 1M bit pow*«\ Supply jNPPNÍ 1Mx1 5V±10% 256KX 4 5V±10% KM44C2Ö6D# 128Kx8 5V±10% KM48C128# KM41C1ÖOOD# I ' 60/70/80 Fast Page P:18 Pin DIP (1Mx1) 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page
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KM41C1
256Kx4)
00D-L#
256KX
KM44C2
KM44C256D-L#
128Kx8
KM48C128#
KM48C128
1mx1 DRAM DIP
KM44V1000C
KM41V4000CL
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE 4 Mega Byte KMM5401OOOC/CG/CM Fast Page Mode 1Mx40 DRAM SIMM, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5401000C is a 1M bit x 40 Dynamic RAM high density memory module. The Samsung KMM5401000C consists of ten CMOS 1Mx4bit DRAMs in 20-pin SOJ packages mounted on
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KMM5401OOOC/CG/CM
1Mx40
KMM5401000C
20-pin
72-pin
KMM5401000C
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE 8 Mega Byte KMM5362000CH Fast Page Mode / 2Mx36 DRAM SIMM with ECC, 5V V GENERAL DESCRIPTION FEATURES The Samsung KMM5362000CH is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362000CH consists of eighteen CMOS 1Mx4bit DRAMs in 20-pin SOJ packages
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KMM5362000CH
2Mx36
20-pin
72-pin
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1004CL
Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7
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KMM5321200BW/BWG-6
5321200BW/BWG-'
KMM5361203BW/8
KMM5322200BW/BWG-6
KMM5322100BKU/BKUG-5
MM5361203BW/BWG-7
KMM5322200BW/BWG-7
2MX32
KMM5322100BK
2Mx36
1004CL
44V16
366F
44C40
372V3280
2100B-7
M5368
KMM5368103B
44v16100
dram module kmm 2mx32
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KM44C1000CJ
Abstract: No abstract text available
Text: KMM372C122CJ/CT DRAM MODULE KMM372C122CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with QCAS, 1K Refresh, 5V FEATURES G EN ERA L D ESC RIPTIO N The Samsung KMM372C122C is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C122C consists of sixteen CMOS
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KMM372C122CJ/CT
KMM372C122CJ/CT
1Mx72
KMM372C122C
300mii
48pin
KM44C1000CJ
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1004CL
Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Text: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page
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KM41C1000D#
KM41C1000D-L#
256Kx4)
256Kx4
KM44C256D#
KM44C256D-L#
128Kx8
KM48C128#
KM48C128
KM48C124#
1004CL
KM48V2104B
KM44V16104AK
KM416V256BL
4M DRAM EDO
KM48V2100B
44v16104
1mx1 DRAM DIP
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Untitled
Abstract: No abstract text available
Text: KM44C1OOOC, KM44V1000C CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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OCR Scan
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KM44C1OOOC,
KM44V1000C
1024cycles
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Untitled
Abstract: No abstract text available
Text: 4 Mega Byte DRAM MODULE KMM5361003C/CG Fast Page Moa» 1Mx36 Quad CAS DRAM SIMM Using Quad CAS DRAM, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5361003C is a 1M bit x 36 Dynamic RAM high density memory mod' e using Parity with 4M Quad CAS DRAM. The Samsung
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KMM5361003C/CG
1Mx36
KMM5361003C
20-pin
24-pin
72-pin
KMW5361003C
KMM5361003C
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Untitled
Abstract: No abstract text available
Text: KM M372C120CJ1/CT1 DRAM MODULE KMM372C120CJ1/CT1 Fast Page Mode 1Mx72 DRAM DIMM with ECC, 1K Refresh, 5V FEATURES GENERAL DESCRIPTION • Performance Range: The Samsung KMM372C120C is a 1M bit x 72 D ynam ic RAM high density m em ory module. The tRAC tCAC
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M372C120CJ1/CT1
KMM372C120CJ1/CT1
1Mx72
KMM372C120C
110ns
130ns
48pin
168-pin
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KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
KM44C256C-6
KM44C256CL-6
KM44C256CSL-6
KM41C4000C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000C-8
KMCJ532512
KM23C1000-20
KM28C64B
KMM594
KM718B90-12
zip 40pin
30-pin simm memory "16m x 8"
KM41C4000C-6
KM41C16000ALL
KM48V2104AL
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km44c2560
Abstract: KM48V2104B-6 KM44C16004A-5
Text: MEMORY ICs FUNCTION GUIDE DRAM For reference 1M bit 258KX4 KM41C1000D-6 —i KM41C1000D-7 KM41C1000D-L6 —i KM41C1000D-L7 KM44C2560-6 —j KM44C256D-7 KM44C256D-L6 1M B/W r , 128KX8 • KM48C128-55 —\ KM48C128-6 — KM41C1000D-L6 - KM44C256D-8 i KM44C256D-L8
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KM41C1000D-6
KM41C1000D-L6
KM41C1000D-7
KM41C1000D-L7
KM44C256D-7
KM44C256D-L7
KM41C1000D-8
258KX4
KM44C2560-6
km44c2560
KM48V2104B-6
KM44C16004A-5
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v1000ct
Abstract: KM44V1000C
Text: KM44C1OOOC, KM44V1000C CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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KM44C1OOOC,
KM44V1000C
1024cycles
v1000ct
KM44V1000C
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KMM364C120C
Abstract: No abstract text available
Text: KMM364C120C J/CT DRAM MODULE KMM364C120CJ/CT Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx4, 1K Refresh, 5V G EN ERA L D ESC RIPTIO N FEATURES The Samsung KMM364C120C is a 1M bit x 64 Dynamic RAM high density memory module. The • Performance Range: tRAC tCAC
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KMM364C120CJ/CT
KMM364C120C
1Mx64
300mil
48pin
168-pin
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Untitled
Abstract: No abstract text available
Text: KM44C1OOOC, KM44V1OOOC CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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OCR Scan
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KM44C1OOOC,
KM44V1OOOC
1024cycles
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