KM44C1000CJ
Abstract: KMM5361000C
Text: DRAM MODULE 4 Mega Byte KMM5361000C2/C2G Fast Page Mode 1Mx36 DRAM SIMM Using Parity PLCC, 5V G EN E R A L D ESCRIPTIO N FEATURES The Samsung KMM5361000C2 is a 1M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5361000C2 consists of eight CMOS
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KMM5361000C2/C2G
1Mx36
KMM5361000C2
20-pin
18-pin
72-pin
KM44C1000CJ
KMM5361000C
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km44c1000cj
Abstract: No abstract text available
Text: / DRAM MODULE 8 Mega Byte KMM5362000C2/C2G Fast Page Mode 2Mx36 DRAM SIMM Using Parity PLCC, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5362000C2 is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362000C2 consists ot sixteen CMOS
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KMM5362000C2/C2G
2Mx36
KMM5362000C2
20-pin
18-pin
72-pin
km44c1000cj
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE 4 Mega Byte KMM5401OOOC/CG/CM Fast Page Mode 1Mx40 DRAM SIMM, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5401000C is a 1M bit x 40 Dynamic RAM high density memory module. The Samsung KMM5401000C consists of ten CMOS 1Mx4bit DRAMs in 20-pin SOJ packages mounted on
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KMM5401OOOC/CG/CM
1Mx40
KMM5401000C
20-pin
72-pin
KMM5401000C
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE 8 Mega Byte KMM5362000CH Fast Page Mode / 2Mx36 DRAM SIMM with ECC, 5V V GENERAL DESCRIPTION FEATURES The Samsung KMM5362000CH is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362000CH consists of eighteen CMOS 1Mx4bit DRAMs in 20-pin SOJ packages
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KMM5362000CH
2Mx36
20-pin
72-pin
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KM44C1000CJ
Abstract: No abstract text available
Text: DRAM MODULE 4 Mega Byte KMM5361000CH Fast Page Mode 1Mx36 DRAM SIMM with ECC, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5361000CH is a 1M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5361000CH consists of nine CMOS • Performance Range:
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KMM5361000CH
1Mx36
20-pin
72-pin
KM44C1000CJ
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KM44C1000CJ
Abstract: No abstract text available
Text: KMM372C122CJ/CT DRAM MODULE KMM372C122CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with QCAS, 1K Refresh, 5V FEATURES G EN ERA L D ESC RIPTIO N The Samsung KMM372C122C is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C122C consists of sixteen CMOS
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KMM372C122CJ/CT
KMM372C122CJ/CT
1Mx72
KMM372C122C
300mii
48pin
KM44C1000CJ
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Untitled
Abstract: No abstract text available
Text: 4 Mega Byte DRAM MODULE KMM5361003C/CG Fast Page Moa» 1Mx36 Quad CAS DRAM SIMM Using Quad CAS DRAM, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5361003C is a 1M bit x 36 Dynamic RAM high density memory mod' e using Parity with 4M Quad CAS DRAM. The Samsung
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KMM5361003C/CG
1Mx36
KMM5361003C
20-pin
24-pin
72-pin
KMW5361003C
KMM5361003C
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Untitled
Abstract: No abstract text available
Text: KM M372C120CJ1/CT1 DRAM MODULE KMM372C120CJ1/CT1 Fast Page Mode 1Mx72 DRAM DIMM with ECC, 1K Refresh, 5V FEATURES GENERAL DESCRIPTION • Performance Range: The Samsung KMM372C120C is a 1M bit x 72 D ynam ic RAM high density m em ory module. The tRAC tCAC
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M372C120CJ1/CT1
KMM372C120CJ1/CT1
1Mx72
KMM372C120C
110ns
130ns
48pin
168-pin
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km44c1003cj
Abstract: km44c1000cj KMM5362003C kmm5362003 EA51
Text: DRAM MODULE_ j _ 8 Mega Byte KMM5362003C/CG Fast Page Mo^e 2Mx36 Quad CAS DRAM SIMM \} Using Quad CAS DRAM, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5362003C is a 2M bit x 36 Dynamic RAM high density memory module using • Performance Range:
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KMM5362003C/CG
2Mx36
KMM5362003C
20-pin
24-pin
72-pin
km44c1003cj
km44c1000cj
kmm5362003
EA51
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KM44C1000CJ
Abstract: No abstract text available
Text: DRAM MODULE KMM372C122CJ/CT KMM372C122CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with QCAS, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C122C is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C122C consists of sixteen CMOS
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KMM372C122CJ/CT
1Mx72
KMM372C122CJ/CT
KMM372C122C
300mil
48pin
168-pin
KMM372C122C-5
KM44C1000CJ
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