AS8S512K3
Abstract: No abstract text available
Text: ADVANCED iPEM 64 Mb ASYNC SRAM AS8S2M32PEC 64Mb, 2Mx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh cycles Parallel Read/Write Interface
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AS8S2M32PEC
2Mx32
M0-47AE
AS8S2M32
AS8S2M32PEC
AS8S512K3
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p 602
Abstract: W82M32V-XBX
Text: White Electronic Designs W82M32V-XBX 2Mx32 SRAM 3.3V MULTI-CHIP PACKAGE FEATURES Low Power CMOS Access Times of 12, 15, 17, 20ns TTL Compatible Inputs and Outputs Packaging • 255 PBGA, 25mm x 25mm, 625mm Fully Static Operation: 2 Organized as 2Mx32 • No clock or refresh required.
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W82M32V-XBX
2Mx32
625mm
2Mx32
16x16)
p 602
W82M32V-XBX
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O28 Package
Abstract: WF2M32-XXX5 WF2M32U-XG2UX 68 lead CQFJ
Text: White Electronic Designs WF2M32-XXX5 2Mx32 5V Flash Module FEATURES Access Time of 90, 120, 150ns Organized as 2Mx32 Packaging: Commercial, Industrial, and Military Temperature Ranges • 66 pin, PGA Type, 1.185" square, Hermetic Ceramic HIP Package 401 .
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WF2M32-XXX5
2Mx32
150ns
2Mx32
64KBytes
WF2M32U-XG2UX
O28 Package
WF2M32-XXX5
68 lead CQFJ
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PDF
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SIMM 80 jedec
Abstract: 80 pin simm flash Flash SIMM 80 E28F016S5 EDI7F342MC
Text: EDI7F342MC White Electronic Designs 2Mx32 FLASH MODULE DESCRIPTION FIG. 1 The EDI7F342MC and EDI7F2342MC are organized as one and two banks of 2Mx32 respectively. The modules are based on Intel's E28F016S5 2Mx8 Flash device in TSOP packages which are mounted on an
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EDI7F342MC
2Mx32
EDI7F342MC
EDI7F2342MC
E28F016S5
EDI7F342MC-BNC:
A0-A20
150ns
SIMM 80 jedec
80 pin simm flash
Flash SIMM 80
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Untitled
Abstract: No abstract text available
Text: KM23V64205ASG CMOS MASK ROM 64M-Bit 4Mx16 /2Mx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 16(word mode) 2,097,152 x 32(double word mode) • Fast access time Random Access/Page Access 3.3V Operation : 100/30ns(Max.)
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KM23V64205ASG
64M-Bit
4Mx16
/2Mx32)
100/30ns
120/40ns
70-SSOP-500
KM23V64205ASG
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Untitled
Abstract: No abstract text available
Text: K4S643233F-S D E/N/I/P CMOS SDRAM 2Mx32 SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.3 July 2002 Rev. 1.3 July. 2002 K4S643233F-S(D)E/N/I/P CMOS SDRAM Revision History Revision 0.0 (Jan. 2002, Preliminary) • First generation of 2Mx32 SDRAM F-die 90FBGA datasheet (V DD/VDDQ 3.0V/3.0V, 3.3V/3.3V).
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K4S643233F-S
2Mx32
90FBGA
90FBGA
-75/1H/-1L.
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PDF
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28F016S3
Abstract: EDI7F342MV 80pin-SIMM
Text: EDI7F342MV White Electronic 2Mx32 FLASH MODULE DESCRIPTION FIG. 1 The EDI7F342MV and EDI 7F2342MV are organized as one and two banks of 2Mx32 respectively. The modules are based on Intel's 28F016S3 2Mx8 Flash device in TSOP packages which are mounted on an
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Original
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EDI7F342MV
2Mx32
EDI7F342MV
7F2342MV
28F016S3
EDI7F342MV-BNC:
A0-A20
150ns
80pin-SIMM
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PDF
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EDI7F4342MC
Abstract: LH28F016SU
Text: White Electronic Designs EDI7F4342MC 2Mx32 FLASH MODULE DESCRIPTION FEATURES 2Mx32 Based on Sharp's LH28F016SU Flash Device Fast Read Access Time - 80ns 5V Only Reprogramming The EDI7F4342MC is organized as four banks of 2Mx32. The module is based on Sharp's LH28F016SU - 2Mx8
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EDI7F4342MC
4x2Mx32
4x2Mx32
EDI7F4342MC
2Mx32.
LH28F016SU
150ns
EDI7F4342MC80BNC
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Untitled
Abstract: No abstract text available
Text: KMM332V213AJ/AT DRAM MODULE KMM332V213AJ/AT Fast Page Mode 2Mx32 DRAM DIMM based on 2Mx8 Low Power, 2K Refresh , 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM332V213A is a 2M bit x • Performance Range: 32 Dynamic RAM high density memory module. The Samsung KMM332V213A consists of four
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OCR Scan
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KMM332V213AJ/AT
KMM332V213AJ/AT
2Mx32
KMM332V213A
28-pin
72-pin
KMM332V213A-L6
KMM332V213A-L8
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM332F204AT-L KMM332F224AT -L DRAM MODULE KMM332F204AT-L / KMM332F224AT-L Fast Page with EDOMode 2Mx32 DRAM DIMM, Low Pow er, 4K & 1K Refresh, 3.3V G EN ERA L FEATURES DESCRIPTIO N The Samsung KMM332F20 2 4AT is a 2M bit x 32 Dynamic RAM high density memory module. The
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OCR Scan
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KMM332F204AT-L
KMM332F224AT
KMM332F204AT-L
KMM332F224AT-L
2Mx32
KMM332F20
1Mx16bit
44-pin
72-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: HANBit HMF2M32F4VSB Flash-ROM Module 8MByte 2Mx32Bit , 80Pin-SMM, 3.3V Design Part No. HMF2M32F4VSB GENERAL DESCRIPTION The HMF2M32F4VSB is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of four 1M x 16 FROM mounted on a 80-pin stackable type, double - sided, FR4printed circuit board.
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HMF2M32F4VSB
2Mx32Bit)
80Pin-SMM,
HMF2M32F4VSB
x32bit
80-pin
HMF2M32F4VSB-90
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PDF
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Untitled
Abstract: No abstract text available
Text: HANBit HMF2M32F4VA Flash-ROM Module 8MByte 2Mx32Bit , 80Pin-SMM, 3.3V Design Part No. HMF2M32F4VA GENERAL DESCRIPTION The HMF2M32F4VA is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of four 1M x 16 FROM mounted on a 80-pin stackable type, double - sided, FR4printed circuit board.
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HMF2M32F4VA
2Mx32Bit)
80Pin-SMM,
HMF2M32F4VA
x32bit
80-pin
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PDF
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M5M4V17800CTP
Abstract: 2MX32
Text: MITSUBISHI LS Is {DRAM MODULE FAST PAGE MODE DYNAMIC RAM 64i 2MX32 0 * t M BIT Max. Access Type name Load memory time Outward dimensions W X H X D mm) Data sheet page (ns) MH2V32CJJ-5 ★ 50 MH2V32CJJ-6 ★ 60 MH2V32CJJ-7 ★ 70 MH2V32CJJ-5S -k 50 MH2V32CJJ-6S
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2MX32
MH2V32CJJ-5
MH2V32CJJ-6
MH2V32CJJ-7
MH2V32CJJ-5S
MH2V32CJJ-6S
MH2V32CJJ-7S
M5M4V17800CTP
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PDF
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Untitled
Abstract: No abstract text available
Text: □ WF2M32-XXX5 WHITE /MICROELECTRONICS 2Mx325V FLASH MODULE AD VAN CED * FEATURES • A ccess Tim e of 9 0 ,1 2 0 ,150nS Com m ercial, Industrial, and M ilitaryT em p eratu re Ranges ■ Packaging: 5 Vo lt Read and W rite . 5V ± 1 0 % Supply. • 66-pin, PG A T yp e, 1.185 inch square, Herm etic Ceram ic HIP
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WF2M32-XXX5
2Mx325V
150nS
66-pin,
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DPS2MK32MKV3
Abstract: No abstract text available
Text: 8Mx8/4Mx16/2Mx32, 20 - 45ns, PGA 30A128-18 A 64 Megabit High Speed CMOS SRAM DPS2MK32MKV3 PRELIMINARY DESCRIPTION: The DPS2MK32MKV3 ‘’VERSA-STACK’’ module is a revolutionary new high speed memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip
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8Mx8/4Mx16/2Mx32,
30A128-18
DPS2MK32MKV3
DPS2MK32MKV3
500mV
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Untitled
Abstract: No abstract text available
Text: •lì WF2M32-XXX5 Hi-KELiABIUTY PRODUCT 2Mx32 5V FLASH MODULE, SMD 5962-97531 pending PRELIMINARY* FEATURES ■ A c c e s s Tim e of 9 0 ,1 2 0 ,1 50ns C o m m ercial, In d u strial, and M ilita ry Tem p erature Ranges ■ Packaging: 5 V o lt Read and W rite . 5V ± 1 0 % Supply.
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WF2M32-XXX5
2Mx32
64KByte
150ns
01HXX*
120ns
02HXX*
03HXX*
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PDF
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MH2M325CNXJ6
Abstract: 2MX32
Text: MITSUBISHI LS Is DRAM MODULE HYPER PAGE MODE DYNAMIC RAM 64i 2MX32 U H -M B IT Max. Access Type name Load memory time Outward dimensions Data sheet W X H X D (mm) page 107.95 X 20.2 x 8.60 3 /8 (ns) MH2M325CXJ-5 ★ 50 MH2M325CXJ-6 ★ 60 MH2M325CXJ-7 ★
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2MX32
MH2M325CXJ-5
MH2M325CXJ-6
MH2M325CXJ-7
MH2M325CNXJ-5
MH2M325CNXJ-6
MH2M325CNXJ-7
MH2M325CNXJ6
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28F016S3
Abstract: EDI7F342MV
Text: EDI7F342MV 2Mx32 FLASH MODULE DESCRIPTION FIG. 1 The EDI7F342MV and EDI 7F2342MV are organized as one and two banks of 2Mx32 respectively. The modules are based on Intel's 28F016S3- 2Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate.
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EDI7F342MV
2Mx32
EDI7F342MV
7F2342MV
28F016S3-
EDI7F342MV-BNC:
150ns
A0-A20
28F016S3
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PDF
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HY5DU643222AQ
Abstract: HY5DU643222AQ-4 HY5DU643222AQ-43 HY5DU643222AQ-5 HY5DU643222AQ-7
Text: HY5DU643222AQ 64M 2Mx32 DDR SDRAM HY5DU643222AQ This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.6/ Jan. 02
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HY5DU643222AQ
2Mx32)
250/233/200Mhz
143Mhz
183/166Mhz
100pin
HY5DU643222AQ
HY5DU643222AQ-4
HY5DU643222AQ-43
HY5DU643222AQ-5
HY5DU643222AQ-7
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PDF
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CX-53
Abstract: KM48C2100A cx53 KMM53221 KM48C2100AJ
Text: DRAM MODULE 8 Mega Byte KMM53221OOAU /AUG Fast Page Mode 2Mx32 DRAM SIMM , 2K Refresh, 5 Using 2Mx8 B/W DRAM J GENERAL DESCRIPTION FEATURES The Samsung KMM5322100AU is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322100AU consists of four CMOS
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OCR Scan
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KMM53221OOAU
2Mx32
KMM5322100AU
28-pin
72-pin
CX-53
KM48C2100A
cx53
KMM53221
KM48C2100AJ
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PDF
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Samsung 2MX32 EDO
Abstract: Samsung 2MX32 EDO simm module
Text: DRAM MODULE KMM5322104BKU/BKUG KMM5322104BKU/BKUG Fast Page Mode with Extended Data Out 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM G EN ERA L DESC RIPTIO N FEATURES • Part Identification The Samsung KMM5322104BKU is a 2M bit x 32 Dynamic RAM high density memory module. The
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OCR Scan
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KMM5322104BKU/BKUG
KMM5322104BKU/BKUG
2Mx32
KMM5322104BKU
28-pin
72-pin
KMM5322104BKU
Samsung 2MX32 EDO
Samsung 2MX32 EDO simm module
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PDF
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24w04
Abstract: KMM5322100BK
Text: DRAM MODULE KMM53221OOBKU/BKUG KMM53221 OOBKU/BKUG Fast Page Mode 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM G EN ERA L DESCRIPTIO N FEATURES • Part Identification The Samsung KMM5322100BKU is a 2M bit x 32 Dynamic RAM high density memory module. The
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OCR Scan
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KMM53221
KMM53221OOBKU/BKUG
2Mx32
KMM5322100BKU
28-pin
72-pin
110ns
24w04
KMM5322100BK
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PDF
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KM48V2104BS-L
Abstract: km48v2104bs
Text: KMM332F203BS-L KMM332F213BS-L DRAM MODULE KMM332F203BS-L & KMM332F213BS-L Fast Page with EDO Mode 2Mx32 DRAM DIMM, 2Mx8, Low Power with Self Ref, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM332F20 1 3BS is a 2M bit x 32 D ynam ic RAM high density m em ory module. The
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OCR Scan
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KMM332F203BS-L
KMM332F213BS-L
KMM332F203BS-L
KMM332F213BS-L
2Mx32
KMM332F20
72-pin
332F20
KM48V2104BS-L
km48v2104bs
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary KMM332V204BT-L KMM332V224BT-L DRAM MODULE KMM332V204BT-L & KMM332V224BT-L Fast Page Mode 2Mx32 DRAM DIMM, Low Pow er, 4K & 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM332V20 2 4BT is a 2M bit x 32 Dynam ic RAM high density m em ory module. The
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OCR Scan
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KMM332V204BT-L
KMM332V224BT-L
KMM332V204BT-L
KMM332V224BT-L
2Mx32
KMM332V204BT-L6/L7
cycles/128ms
60/70ns)
KMM332V224BT-L6/L7
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