UNITRODE
Abstract: No abstract text available
Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features ➤ Data retention in the absence of power ➤ Automatic write-protection during power-up/power-down cycles ➤ Industry-standard 32-pin 256K x 8 pinout ➤ Conventional SRAM operation; unlimited write cycles
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bq4014/bq4014Y
32-pin
10-year
256Kx8
bq4014
152-bit
UNITRODE
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K6F2008S2E
Abstract: K6F2008S2E-F
Text: K6F2008S2E Family CMOS SRAM Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft February 28, 2001 1.0 Finalize September 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K6F2008S2E
256Kx8
K6F2008S2E-F
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IBM0418A41NLAB
Abstract: IBM0418A81NLAB IBM0436A41NLAB IBM0436A81NLAB
Text: IBM0436A41NLAB IBM0418A41NLAB IBM0418A81NLAB IBM0436A81NLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM . Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • Registered outputs • 30 Ω drivers
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IBM0436A41NLAB
IBM0418A41NLAB
IBM0418A81NLAB
IBM0436A81NLAB
256Kx36
512Kx18)
128Kx36
256Kx18)
crrL3325
IBM0418A41NLAB
IBM0436A81NLAB
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K7A401800B-QC
Abstract: K7A401809B K7A401809B-QC K7A403200B-QC K7A403209B K7A403209B-QC K7A403609B K7B401825B-QC K7B403225B-QC
Text: K7A403609B K7A403209B K7A401809B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters
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K7A403609B
K7A403209B
K7A401809B
128Kx36/x32
256Kx18
128Kx36
128Kx32
256Kx18-Bit
570mA
490mA
K7A401800B-QC
K7A401809B
K7A401809B-QC
K7A403200B-QC
K7A403209B
K7A403209B-QC
K7A403609B
K7B401825B-QC
K7B403225B-QC
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K6X4016C3F
Abstract: K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q
Text: CMOS SRAM K6X4016C3F Family Document Title 256Kx16 bit Low Power full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 26, 2002 Preliminary 0.1 Revised Added Commercial Product. Deleted 44-TSOP2-400R Package Type.
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K6X4016C3F
256Kx16
44-TSOP2-400R
K6X4016C3F-B
K6X4016C3F-F
K6X4016C3F-Q
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K7A401800B
Abstract: K7A401800B-QC K7A401809B-QC K7A403200B K7A403200B-QC K7A403209B-QC K7A403600B K7B401825B-QC K7B403225B-QC
Text: K7A403600B K7A403200B K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters
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K7A403600B
K7A403200B
K7A401800B
128Kx36/x32
256Kx18
128Kx36
128Kx32
256Kx18-Bit
350mA
290mA
K7A401800B
K7A401800B-QC
K7A401809B-QC
K7A403200B
K7A403200B-QC
K7A403209B-QC
K7A403600B
K7B401825B-QC
K7B403225B-QC
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IBM0418A8ACLAB
Abstract: IBM0436A4ACLAB IBM0436A8ACLAB IBM0418A4ACLAB
Text: . IBM0418A4ACLAB IBM0436A8ACLAB Preliminary IBM0418A8ACLAB IBM0436A4ACLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25 Micron CMOS technology
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IBM0418A4ACLAB
IBM0436A8ACLAB
IBM0418A8ACLAB
IBM0436A4ACLAB
256Kx36
512Kx18)
128Kx36
256Kx18)
crlh3320
IBM0418A8ACLAB
IBM0436A4ACLAB
IBM0436A8ACLAB
IBM0418A4ACLAB
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K6R1004C1D
Abstract: No abstract text available
Text: PRELIMINARY Preliminary PRELIMINARY K6R1004C1D CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial release with Preliminary. Current modify 1. Delete 15ns speed bin.
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K6R1004C1D
256Kx4
32-SOJ-400
K6R1004C1D
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K7D803671B-HC33
Abstract: K7D803671B-HC30 K7D801871B-HC35 K7D801871B-HC37 K7D803671B K7D803671B-HC25 K7D803671B-HC35 K7D803671B-HC37
Text: K7D803671B K7D801871B 256Kx36 & 512Kx18 SRAM Document Title 8M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 -Initial document. July. 2000 Advance Rev. 0.1 -ZQ tolerance changed from 10% to 15% Aug. 2000 Advance Rev. 0.2
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K7D803671B
K7D801871B
256Kx36
512Kx18
-HC16
012MAX
K7D803671B-HC33
K7D803671B-HC30
K7D801871B-HC35
K7D801871B-HC37
K7D803671B
K7D803671B-HC25
K7D803671B-HC35
K7D803671B-HC37
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K7N401801B
Abstract: K7N403601B
Text: K7N403601B K7N401801B 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary 0.1 1. Changed DC parameters Icc ; from 350mA to 290mA at -16,
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K7N403601B
K7N401801B
128Kx36
256Kx18
256Kx18-Bit
350mA
290mA
330mA
270mA
K7N401801B
K7N403601B
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K7B801825B
Abstract: K7B803625B
Text: K7B803625B K7B801825B 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft May. 18 . 2001 Preliminary 0.1 Add x32 org part and industrial temperature part
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K7B803625B
K7B801825B
256Kx36
512Kx18
512Kx18-Bit
119BGA
225MHz
K7B801825B
K7B803625B
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CY7C197
Abstract: No abstract text available
Text: CY7C197 256Kx1 Static RAM Features vided by an active LOW chip enable CE and three-state drivers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the chip enable
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CY7C197
256Kx1
CY7C197
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K6F4016U6G-EF70
Abstract: K6F4016U6G K6F4016U6G-F K6F4016U6GE
Text: Preliminary CMOS SRAM K6F4016U6G Family Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark June 11, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K6F4016U6G
256Kx16
55/Typ.
35/Typ.
K6F4016U6G-EF70
K6F4016U6G-F
K6F4016U6GE
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IBM0418A4ANLAB
Abstract: IBM0418A8ANLAB IBM0436A4ANLAB IBM0436A8ANLAB
Text: . Preliminary IBM0418A4ANLAB IBM0418A8ANLAB IBM0436A8ANLAB IBM0436A4ANLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25µ CMOS technology • Synchronous Register-Latch Mode of Operation
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IBM0418A4ANLAB
IBM0418A8ANLAB
IBM0436A8ANLAB
IBM0436A4ANLAB
256Kx36
512Kx18)
128Kx36
256Kx18)
crlL3325
IBM0418A8ANLAB
IBM0436A4ANLAB
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Untitled
Abstract: No abstract text available
Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4014 is a nonvolatile 2,097,152-bit static RAM organized as 262,144 words by 8 bits. The integral control circuitry and lithium energy
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bq4014/bq4014Y
256Kx8
bq4014
152-bit
32-pin
10-year
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bq4014
Abstract: BQ4014MB-120 BQ4014MB-85 bq4014Y BQ4014YMB-85
Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4014 is a nonvolatile 2,097,152-bit static RAM organized as 262,144 words by 8 bits. The integral control circuitry and lithium energy
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bq4014/bq4014Y
256Kx8
bq4014
152-bit
32-pin
10-year
BQ4014MB-120
BQ4014MB-85
bq4014Y
BQ4014YMB-85
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Untitled
Abstract: No abstract text available
Text: OJ bq4014/bq4014Y UNITRODE- 256Kx8 Nonvolatile SRAM Features > Data retention in the absence of power > Automatic write-protection dur ing power-up/power-down cycles >• Industry-standard 32-pin 256K x 8 pinout >• Conventional SEAM operation; unlimited write cycles
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bq4014/bq4014Y
256Kx8
bq4014
152-bit
256Kx
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LC3516AL-10
Abstract: LC3516A-10
Text: SANYO SEMICONDUCTOR - 3 B E C ORP D • 7 q ^ 7 Q 7b □□ 054 53 1 H9 CMOS DYNAMIC RAM Capacity Access Tim e Organization Words X Bits 1MX1 1M 256KX4 Type N o . T rac ns max L C 3 2 1 0 0 0 -1 0 /1 2 L C 3 2 1 0 0 0 J -1 0 /1 2 L C 3 2 10O O Z-1 0 /1 2
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SOJ26
S0J26
256KX4
LC3516A-10
LC3516A-12
LC3516AL-10
LC3516AL-12
LC3516AM-10
LC3516AM-12
MFP24
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schematic diagram cga to vga
Abstract: DD11D1D SCHEMATIC mda VGA board cga ega vga RAMDAC DIP BT477 TTL sync video CGA to vga schematic diagram cga to vga circuit convert ega to vga I334 cga to vga
Text: UM•■ ■■• ■■ ■■ai i v a n i r à 82C453 Ultra VGA Graphics Controller ■ High Performance VRAM VGA optimized for 800x600 and 1024x768, 16 and 256 color, display resolutions interlaced/non-interlaced ■ 4 VRAMs (256Kx4) support all Super VGA
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82C453
800x600
1024x768,
256Kx4)
1024x768
160-Pin
G011GHD
schematic diagram cga to vga
DD11D1D
SCHEMATIC mda VGA board
cga ega vga
RAMDAC DIP BT477
TTL sync video CGA to vga
schematic diagram cga to vga circuit
convert ega to vga
I334
cga to vga
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DDC Panel
Abstract: CYBER9320 Trident vga ibm crt monitor circuit diagram Non VGA Video Controller IC flat crt circuit diagram PQ-32/plasma 640x480
Text: / Trident CYBER9320 Flat Panel Controller Features Highly Integrated Design • Requires only one 256Kxl6 DRAM for 1024x768-16 color SVGA solution • Built-in LUT-DAC composed of 256x18 color look-up table • Dual loop memory and video clock • Two-chip solution 9320 and 256Kxl6 for 512K
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CYBER9320TM
256Kxl6
1024x768-16
256x18
256Kxl6)
208-pin
1024x768-16,
800x600-256,
640x480-64K,
640x480-256
DDC Panel
CYBER9320
Trident vga
ibm crt monitor circuit diagram
Non VGA Video Controller IC
flat crt circuit diagram
PQ-32/plasma 640x480
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Untitled
Abstract: No abstract text available
Text: ¡ n t I» P ftE U R fl 11 " H ì1 51C256H HIGH PERFORMANCE RIPPLEMODE 256Kx 1 CHMOS DYNAMIC RAM 51C256H-10t 51C256H-12 51C256H-15 51C256H-20 100 120 150 200 Maximum Column Address Accsss Tims (ns 40 50 65 85 Ripplemode Cycle Tims (ns) 50 60 75 95 Maximum Access Tims (ns)
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51C256H
256Kx
51C256H-10t
51C256H-12
51C256H-15
51C256H-20
tRcB170
51C256H
144x1
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HY514264
Abstract: No abstract text available
Text: •HYUNDAI HY514264B 256Kx16, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60
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HY514264B
256Kx16,
16-bit
40-pin
400mil)
16-bits
256Kx16
HY514264
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Untitled
Abstract: No abstract text available
Text: i 128K X 36, 256KX 18, 3.3V SYNCHRONOUS SRAMS WITH ZBT FEATURE, BURST COUNTER AND FLOW-THROUGH OUTPUTS :$*&&* 4« *»»« tK fc « * 'S * * * * ; 4ÎK«« '* * * « ^ iL j; PRELIMINARY IDT71 V2557,IDT71 V2559 IDT71V3557, IDT71V3559 FEATURES: The IDT71 Vx557/59 contain address, data-in and control signal regis
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256KX
IDT71
V2557
V2559
IDT71V3557,
IDT71V3559
Vx557/59
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256Kx4 SRAM
Abstract: EDI8M4257C
Text: mD\ EDI8M4257C Electronic Designs Inc. High Speed Megabit SRAM Module 256Kx4 SRAM CMOS, High Speed Module Features The EDI8M4257C is a Megabit 256Kx4-bit High Speed Static RAM Module with four bi-directional input/ output lines. The module is constructed of four 256Kx1
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EDI8M4257C
256Kx4
EDI8M4257C
256Kx4-bit)
256Kx1
181256C
256Kx4 SRAM
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