Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC 02 D E ^ 7TL4142 DDDbElb Octal 3 State Bus Transceivers with Registers KS54ÄHCT f ì £ Z Ì 7 f ì i Z Ò KS74AHCT 0 0 Preliminary Specifications FEATURES DESCRIPTION • • • • These devices consist of bus transceiver circuits. D-type
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7TL4142
KS74AHCT
-54/74ALS
7Tb414S
90-XO
14-Pin
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C1000B
Abstract: 3020C
Text: KM416C1000BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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KM416C1000BT
16Bit
1Mx16
7Tb4142
DD3D23b
C1000B
3020C
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KM29N040T
Abstract: 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping
Text: KM29N040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array - Data Register Its NAND cell structure provides the most cost-effective
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KM29N040T
512Kx8
500us
400mil/0
KM29N040T
512Kx8bit
KM29N040
KM29N040T)
7TL4142
741 IC data sheet
bhrb
data sheet IC 741
KM29N04
samsung flash bad block mapping
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U111B
Abstract: KM732V588 KM732V588-13 KM732V588-15 KM732V588-17
Text: KM732V588 32Kx32 Synchronous SRAM 32K X 32-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • 2 Stage Pipelined operation with 4 Burst • On-Chip Address Counter. • Self-Timed Write Cycle. • On- Chip Address and Control Registers.
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KM732V588
32Kx32
32-Bit
100-Pin
002171t
U111B
KM732V588
KM732V588-13
KM732V588-15
KM732V588-17
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Untitled
Abstract: No abstract text available
Text: KC73129UC 1/3 INCH CCD IMAGE SENSOR FOR PAL INTRODUCTION The KC 73129UC is an interline transfer CCD area im age sensor developed fo r PAL 1/3inch optical form at video cam eras, surveillance cam eras, object detectors and im age pattern recognizers. High sensitivity is achieved
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KC73129UC
73129UC
KC73129if
0D37073
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Untitled
Abstract: No abstract text available
Text: The information in this data sheet can change upon complete cajaracterization and evaluation Of this new product. I f n A f\A Q A Iv U /W J ^ rO ^ » 110 M H z C M O S T r u e - C o lo r R A M D A C KDA0484 FEATURES ♦ 110,85MHz Pixel Clock ♦ 8 :1 , 4:1, 2:1,1:1 MUX Modes
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KDA0484
85MHz
32x32x2
256x8
KDA0484.
KDA0484
KDA0484L-110
110MHz
84-PLCC-SQ
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Untitled
Abstract: No abstract text available
Text: K M4 1 V 4 0 0 0 D J CMOS DRAM ELECTRONICS 4 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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KM41V4000DJ
b414E
7Tb414E
003410b
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Untitled
Abstract: No abstract text available
Text: IRLS530A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ b v dss Logic Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max. @ VOS=100V
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IRLS530A
T0-220F
300nF
7Tb4142
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Untitled
Abstract: No abstract text available
Text: CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 urn CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8
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KM684000A
512Kx8
32-DIP,
32-SOP,
32-TSOP
D23bSfl
7TL4142
0G23bSc
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Untitled
Abstract: No abstract text available
Text: KM41C16000A, KM41V16000A CMOS DRAM 1 6 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time(-5,
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KM41C16000A,
KM41V16000A
16Mx1
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Untitled
Abstract: No abstract text available
Text: KM48C514DJ CMOS DRAM 5 1 2 K x 8 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family o1 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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KM48C514DJ
512Kx8
consumptio512Kx8)
003S442
7TL4142
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ADC CCIR 601
Abstract: Solid state CCIR ca 151 KS0122-S aexo chroma 175 ic CCIR601 KS0119 KS0122 multi S-Video Input
Text: KS0122 Data Sheet MULTIMEDIA VIDEO MULTISTANDARD VIDEO DECODER The KS0122 converts analog NTSC or PAL video in composite or S-video format to digitized component video. Output data can be selected for CCIR 601 or square pixel sample rates in either YUV or RGB formats. All required
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KS0122
100-QFP-1420C
ADC CCIR 601
Solid state CCIR ca 151
KS0122-S
aexo
chroma 175 ic
CCIR601
KS0119
multi S-Video Input
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km44c258
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC E3E D 7^4142 KM44C258A Q00fll7S Ì CMOS DRAM r - 2 5 6 K x 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C258A is a CMOS high speed 262,144 x 4 dynamic random access memory, its design
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Q00fll7S
KM44C258A
150ns
180ns
220ns
KM44C258A-8
KM44C258A-10
KM44C258A-12
100ns
120ns
km44c258
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Untitled
Abstract: No abstract text available
Text: KS16120B Preliminary DSP for Digital Answering phone with ARAM interface INTRODUCTION KS16120B is a digital signal processor IC that implements all the 80-Q FP-1420C functions and hardware interfaces necessary for voice compression, storage and digital telephone answerer.
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KS16120B
KS16120B
4M/16M
-24dB
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A30Z
Abstract: 3224B V256D ttl 74112
Text: KM416V256DJ CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mods CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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16V256DJ
256Kx16
KM416V256DJ
Q0322bt.
A30Z
3224B
V256D
ttl 74112
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IC07
Abstract: KM44C1000D KM44V1000D
Text: KM44V1000DJ ELECTRONICS CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Rags Mode CMOS DRAMs. Fast Pag Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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KM44V1000DJ
71b4142
IC07
KM44C1000D
KM44V1000D
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KM68B4002J-12
Abstract: KM68B4002J-15
Text: KM68B4002 CMOS SRAM 512 K x 8Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max) (CMOS): 30 mA(Max.) Operating KM68B4002J-12:195mA(Max.) KM68B4002J-13:195 mA(Max.)
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KM68B4002
512Kx
KM68B4002J-12
195mA
KM68B4002J-13
KM68B4002J-15
KM68B4002J
36-SOJ-400
KM68B4002
304-bit
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ti77
Abstract: BV EI 301
Text: PRELIM INARY KM 29V16000ATS/RS FLASH M EM O RY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization • - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase
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KM29V16000ATS/RS
250us
KM29V16000A
Figure15
0D242fl2
ti77
BV EI 301
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KDA0801CN
Abstract: No abstract text available
Text: SAMSUNG S EM IC ON DUCTOR INC Tfl DE I • 7 e^]4 1 4 3 DOD4T4t, 3 T ^ 3 7 -0 9 -¿> 5 ~ KDA0800/KDA0801/KDA0802 LINEAR INTEGRATED CIRCUIT 8-BIT D/A CONVERTER The KDA0800 series are monolithic 8-bit high-speed current-output digital-to-analog converters DAC featuring typical settling times of
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KDA0800/KDA0801/KDA0802
KDA0800
100ns.
HP5082S
KA361
KA319
KDA0801CN
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KM41C16000BK
Abstract: No abstract text available
Text: K M 4 1 C 16 0 0 0 B K CMOS DRAM ELECTRONICS 1 6 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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16Mx1
KM41C16000BK
KM41C16000BK
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Untitled
Abstract: No abstract text available
Text: KM44C1003C/CL/CSL CMOS DRAM 1M x4B it CMOS Quad CAS RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C KM44C1003C/CIVCSL-5 50ns 13ns 90ns KM44Ú1003C/CL/CSL-6 60ns 15ns 110ns KM44C1003C/CL/CSL-7 70ns 20ns 130ns KM44C1003C/CL/CSL-8
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KM44C1003C/CL/CSL
KM44C1003C/CIVCSL-5
1003C/CL/CSL-6
110ns
KM44C1003C/CL/CSL-7
130ns
KM44C1003C/CL/CSL-8
150ns
cycle/16m
7TL4142
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Untitled
Abstract: No abstract text available
Text: KMM374F400BK KMM374F410BK DRAM MODULE KMM374F400BK & KMM374F410BK EDO Mode without buffer 4Mx72 DRAM DIMM with ECC based on 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F40 1 0BK is a 4M bit x 72 Dynamic RAM high density memory module. The
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KMM374F400BK
KMM374F410BK
KMM374F410BK
4Mx72
KMM374F40
300mii
168-pin
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KM44C1000C
Abstract: No abstract text available
Text: KM44C1OOOC/CL/CSL CMOS DRAM 1M x4B it CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000C/CUCSL is a high speed C M O S 1,0 4 8 ,5 7 6 x 4 D yn a m ic R and om A cce ss Memory. Its design is optimized for high performance
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KM44C1OOOC/CL/CSL
KM44C1000C/CUCSL
KM44C1000C/CL/CSL-5
KM44C1000C/CL/CSL-6
KM44C1000C/CL/CSL-7
130ns
KM44C1000C/CL/CSL-8
150ns
7TL4142
KM44C1000C
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Untitled
Abstract: No abstract text available
Text: KM644002/L CMOSSRAM 1,048,576 WORD x 4 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 17, 20, 25ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA (Max.) L-Ver : 500«A (Max.) Operating : KM644002-17 : 170mA (Max.)
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KM644002/L
KM644002-17
170mA
KM644002-20:
150mA
KM644002-25:
130mA
KM644002J/LJ
32-SOJ-400
KM644002/L
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