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    Samsung Semiconductor KM44V1000CT-6

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM44V1000CT-6 36
    • 1 $22.4775
    • 10 $19.98
    • 100 $18.4815
    • 1000 $18.4815
    • 10000 $18.4815
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    KM44V1000C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM44V1000C

    Abstract: No abstract text available
    Text: KM44V1OOOC/CL/CLL CMOS DRAM 1M x4 B it CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C KM44V1000C/CL/CLL-6 60ns 15ns 110ns KM44V1000C/CL/CLL-7 70ns 20ns 130ns KM44V1000C/CL/CLL-8 80ns 20ns 150ns > Fast Page Mode operation


    OCR Scan     		PDF KM44V1OOOC/CL/CLL KM44V1000C/CL/CLL-6 110ns KM44V1000C/CL/CLL-7 130ns KM44V1000C/CL/CLL-8 KM44V1000C/CL/CLL 150ns 20-LEAD KM44V1 KM44V1000C

    Untitled

    Abstract: No abstract text available
    Text: KM44C1000C, KM44V1000C CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		PDF KM44C1000C, KM44V1000C 1024cycles G231tic

    Untitled

    Abstract: No abstract text available
    Text: KM44C1OOOC, KM44V1000C CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		PDF KM44C1OOOC, KM44V1000C 1024cycles

    v1000ct

    Abstract: KM44V1000C
    Text: KM44C1OOOC, KM44V1000C CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		PDF KM44C1OOOC, KM44V1000C 1024cycles v1000ct KM44V1000C

    KM44C4000aS 6

    Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6


    OCR Scan     		PDF KM41C4000C-5 KM41C4000CL-5 KM41C4002C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000CL-7 KM41C4002C-7 KM41V4000C-7 KM41V4000CL-7 KM41C4000C-8 KM44C4000aS 6 KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL

    Untitled

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23


    OCR Scan     		PDF KM41C1000D KM44C256D. KM41C4000C KM41V4000C.

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364V120CJ/CT KMM364V120CJ/CT Fast Page Mode 1Mx64 DRAM DIMM, 1K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Sam sung KM M 364V120C is a 1M bit x 64 D ynam ic RAM high density m em ory module. The Samsung KM M 364V120C consists of sixteen CMOS


    OCR Scan     		PDF KMM364V120CJ/CT KMM364V120CJ/CT 1Mx64 364V120C KMM364V120C 110ns 130ns 48pin

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000

    KM418C256

    Abstract: KM48C2100AL KM416C254 KM44V4100AL KM44C1003
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE DRAM Density 1M bil Org. 1Mx1 Power Supply 5V±10% Part Number KM41C1000D# Speed(ns) 60/70/80 Features Fast Page 5V±10% KM44C256D# 60/70/80 Fast Page 4Mx1 5V±10% KM41C4000C# 50/60/70/80 Fast Page KM41C4002C# 60/70/80


    OCR Scan     		PDF KM41C1000D# KM41C10OOD-L# 256Kx4) 256Kx4 KM44C256D# KM44C256D-L# KM41C4000C# KM41C4000CL# KM41C4002C# KM41V4000C# KM418C256 KM48C2100AL KM416C254 KM44V4100AL KM44C1003

    1mx1 DRAM DIP

    Abstract: KM44V1000C KM41V4000CL
    Text: FUNCTION GUIDE MEMORY ICS DRAM For Reference Org. Density 1M bit pow*«\ Supply jNPPNÍ 1Mx1 5V±10% 256KX 4 5V±10% KM44C2Ö6D# 128Kx8 5V±10% KM48C128# KM41C1ÖOOD# I ' 60/70/80 Fast Page P:18 Pin DIP (1Mx1) 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page


    OCR Scan     		PDF KM41C1 256Kx4) 00D-L# 256KX KM44C2 KM44C256D-L# 128Kx8 KM48C128# KM48C128 1mx1 DRAM DIP KM44V1000C KM41V4000CL

    1004CL

    Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
    Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7


    OCR Scan     		PDF KMM5321200BW/BWG-6 5321200BW/BWG-' KMM5361203BW/8 KMM5322200BW/BWG-6 KMM5322100BKU/BKUG-5 MM5361203BW/BWG-7 KMM5322200BW/BWG-7 2MX32 KMM5322100BK 2Mx36 1004CL 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32

    Untitled

    Abstract: No abstract text available
    Text: KMM372V120CJ/CT DRAM MODULE KMM372V120CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with ECC, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V120C is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372V120C consists of eighteen


    OCR Scan     		PDF KMM372V120CJ/CT KMM372V120CJ/CT 1Mx72 KMM372V120C 300mil 48pin 168-pin cycles/16ms 1000mil)

    Untitled

    Abstract: No abstract text available
    Text: KM44V1OOOC/CL/CLL CMOS DRAM 1M x 4 B it CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION T h e S a m s u n g K M 4 4 V 1 0 0 0 C /C L /C L L is a high sp ee d • Performance range: K M 4 4 V 1 0 0 0 C /C L /C L L -6 tR A C tC A C tR C 60ns


    OCR Scan     		PDF KM44V1OOOC/CL/CLL 20-LEAD

    1004CL

    Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
    Text: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page


    OCR Scan     		PDF KM41C1000D# KM41C1000D-L# 256Kx4) 256Kx4 KM44C256D# KM44C256D-L# 128Kx8 KM48C128# KM48C128 KM48C124# 1004CL KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP

    KM416C60-7

    Abstract: KM48C2104B KM416C60-6 KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7
    Text: General Information CMOS DRAM 1. Introduction j KM41C1000D-6 1M bit KM41C1000D-7 KM41C1000D-8 I KM41C1000D-L6|—¡ KM41C1000D-L7[— j KM41C1000D-L8 1 4M bit M 64Kx1« 4Mx1 KM48C124-55 —j KM48C124-6 KM48C124-7 KM416C60-55 — KM416C60-6 KM416C60-7 KM416C64-55


    OCR Scan     		PDF KM41C1000D-6 KM41C1000D-7 KM41C1000D-8 KM41C1000D-L6 KM41C1000D-L7 KM41C1000D-L8 KM48C124-55 KM48C124-6 KM416C60-6 KM416C64-6 KM416C60-7 KM48C2104B KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364V120CJ/CT KMM364V120CJ/CT Fast Page Mode 1Mx64 DRAM DIMM, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Performance Range: The S am sung KM M 364V120C is a 1M bit x 64 D ynam ic RAM high density m em ory module. The KMM364V120C - 6 K M M 364V120C - 7


    OCR Scan     		PDF KMM364V120CJ/CT 1Mx64 KMM364V120CJ/CT 364V120C 48pin 168-pin KMM364V120C

    KM44C1000C

    Abstract: a9lc KM44V1000C samsung 470 uf 50v
    Text: KM44C1000C, KM44V1OOOC CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		PDF KM44C1000C, KM44V1OOOC 1024cycles 7TL4142 002D174 KM44C1000C a9lc KM44V1000C samsung 470 uf 50v

    Untitled

    Abstract: No abstract text available
    Text: KM44C1OOOC, KM44V1OOOC CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		PDF KM44C1OOOC, KM44V1OOOC 1024cycles

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372V120CJ1/CT1 KMM372V120CJ1/CT1 Fast Page Mode 1Mx72 DRAM DIMM with ECC, 1K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KM M 372V120C is a 1M bit x 72 D ynam ic RAM high density m em ory module. The KMM372V120C - 6


    OCR Scan     		PDF KMM372V120CJ1/CT1 KMM372V120CJ1/CT1 1Mx72 372V120C KMM372V120C 110ns 130ns 48pin 168-pin

    KMM332V120CT-L7

    Abstract: KM44V1000CLT
    Text: DRAM MODULE KMM332V120CT KMM332V120CT Fast Page Mode 1Mx32 DRAM DIMM based on 1Mx4 Low Power, 1K Refresh , 3.3V GENERAL DESCRIPTIO N The Samsung KMM332V120CT is a 1M bit x 32 Dynamic RAM low power memory module. The Samsung KMM332V120CT consists of eight CMOS


    OCR Scan     		PDF KMM332V120CT 1Mx32 KMM332V120CT- KMM332V120CT-L7 KMM332V12: KMM332V120CT 20-pin 72-pin KM44V1000CLT