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    HYM536410AM70

    Abstract: KMM5364103AK-6 KMM53632000AKA-60 KMM53632000AK-6U KMM5364103AK-70 KMM53632000AK6 KMM5362003C-60 4MX36 KMM53616000AK 16MX36
    Text: Page 1 12/09/97 AP450GX MP Server System 12/9/97 The following tables list SIMM/DIMM devices known to be compatible with the specified Intel platforms. In general, SIMM devices, which are faster than those specified for a given platform, will work although no extra performance will be realized. The memory devices


    Original     		PDF AP450GX HYM536410AM70 KMM5364103AK-6 KMM53632000AKA-60 KMM53632000AK-6U KMM5364103AK-70 KMM53632000AK6 KMM5362003C-60 4MX36 KMM53616000AK 16MX36

    Untitled

    Abstract: No abstract text available
    Text: KMM5368003BK/BKG KMM5368103BK/BKG DRAM MODULE KMM5368003BK/BKG & KMM5368103BK/BKG Fast Page Mode 8Mx36 DRAM SIMM, 4K & 2K Ref, using 16M QCAS DRAM with 300mil PKG GENERAL DESCRIPTION The Samsung KMM53680 1 03BK is a 8M bit x 36 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM5368003BK/BKG KMM5368103BK/BKG KMM5368103BK/BKG 8Mx36 300mil KMM53680 24-pin 28-pin

    KMM5368103B

    Abstract: 53680 KMM5368103BKG 4Mx4 DRAM
    Text: KMM5368003BK/BKG KMM5368103BK/BKG DRAM MODULE KMM5368003BK/BKG $ KMM5368103BK/BKG Fast Page Mode 8Mx36 DRAM SIMM, 4K & 2K Ref, using 16M QCAS DRAM with 300mil PKG GENERAL DESCRIPTION FEATURES The Sam sung K M M 53680 1 03BK is a 8M bit x 36 D ynam ic RAM high


    OCR Scan     		PDF KMM5368003BK/BKG KMM5368103BK/BKG KMM5368003BK/BKG KMM5368103BK/BKG 8Mx36 300mil 24-pin 28-pin 72-pin KMM53680 KMM5368103B 53680 KMM5368103BKG 4Mx4 DRAM

    1004CL

    Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
    Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7


    OCR Scan     		PDF KMM5321200BW/BWG-6 5321200BW/BWG-' KMM5361203BW/8 KMM5322200BW/BWG-6 KMM5322100BKU/BKUG-5 MM5361203BW/BWG-7 KMM5322200BW/BWG-7 2MX32 KMM5322100BK 2Mx36 1004CL 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32

    KMM366F213BK6

    Abstract: KMM364E124BJ6 KMM366F213BK-6 KMM374F410BK6 83AK KMM366F410BK6 KMM374F400BK6 KMM366F400BK6 124BT-L7 KMM364C12
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line Memory Module SIMM l-l. Fast Page ( FP ) Mode ;16MBased 2Mx36 4Mx32 4Mx3fi 8Mx32 8Mx3C 64MBased>- KMM5321200BW/BWG-6.Tf KMM5321200BW/BWGKMM5361203BW/BWG-6 KMM5361203BW/BWG-7 KMM5322200BW/BWG-6 KMM5322200BW/BWG-7


    OCR Scan     		PDF 2Mx36 4Mx32 8Mx32 KMM374F4l KMM374F410BK-6 8Mx64 MM366F883AK-5_ KMM366F883AK-6 KMM366F803AK-5 KMM374F KMM366F213BK6 KMM364E124BJ6 KMM366F213BK-6 KMM374F410BK6 83AK KMM366F410BK6 KMM374F400BK6 KMM366F400BK6 124BT-L7 KMM364C12

    1MX16

    Abstract: KMM5324104BK KMM5321200B
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE DRAM Module Org. Part No. Feature 4 Byte Single In-Line Memory Module 5 V 1Mx32 1Mx36 2Mx32 4Mx36 8Mx32 8Mx36 1— -— — r ÍF P .S G , PPD 1Mx16, SOJ 60/70 750 1024/16 r ~ m o w KMM5321200BW/BWG


    OCR Scan     		PDF 1Mx32 KMM5321200AW/AWG KMM5321200BW/BWG KMM5321204AW/AWG KMM5321204BW/BWG 1Mx36 M15361203A 1Mx16, 1Mx16 16Mx4, 1MX16 KMM5324104BK KMM5321200B

    K 4096

    Abstract: KMM5368103 KMM5368103B
    Text: KM M 5 36 8003B K/B KG KM M 53681 03B K/B KG DRAM M ODULE K M M 5 3 6 8 0 0 3 B K/B K G & KM M 53681 0 3 B K / B K G with Fast P a g e M o d e 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS EDO, 4K/2K Refresh, 5V FE AT U RE S G E N E R A L DE SCRIPTION The Samsung KMM53680 1 03BK is a 8Mx36bits


    OCR Scan     		PDF 8003B KMM53680 8Mx36bits 5368003B cycles/64ms 5368103B cycles/32ms K 4096 KMM5368103 KMM5368103B