MSC2323258D
Abstract: No abstract text available
Text: This version: Mar. 3. 1999 Semiconductor MSC2323258D-xxBS4/DS4 2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSC2323258D-xxBS4/DS4 is a fully decoded, 2,097,152-word x 32-bit CMOS dynamic random access memory module composed of four 16Mb DRAMs in SOJ packages mounted with eight decoupling capacitors on a
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MSC2323258D-xxBS4/DS4
152-word
32-bit
MSC2323258D-xxBS4/DS4
72-pin
MSC2323258D
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MSC23B236D
Abstract: No abstract text available
Text: This version: Mar. 3. 1999 Semiconductor MSC23B236D-xxBS8/DS8 2,097,152-word x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The MSC23B236D-xxBS8/DS8 is a fully decoded, 2,097,152-word x 36-bit CMOS dynamic random access memory module composed of four 16Mb DRAMs in SOJ packages and four 2Mb DRAMs in SOJ packages mounted with
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MSC23B236D-xxBS8/DS8
152-word
36-bit
MSC23B236D-xxBS8/DS8
72-pin
MSC23B236D
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Untitled
Abstract: No abstract text available
Text: HY51V S 16163HG/HGL 1M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION The HY51V(S)16163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)16163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)16163HG/HGL offers Extended Data Out PageMode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)16163HG/HGL to be
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HY51V
16163HG/HGL
16Bit
16163HG/HGL
16bit.
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MSC23140D
Abstract: DS1067
Text: This version: Feb. 23. 1999 Semiconductor MSC23140D-xxBS10/DS10 1,048,576-word x 40-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The MSC23140D-xxBS10/DS10 is a fully decoded, 1,048,576-word x 40-bit CMOS dynamic random access memory module composed of ten 4Mb DRAMs in SOJ packages mounted with ten decoupling capacitors on a 72pin glass epoxy single-inline package. This module supports any application where high density and large capacity
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MSC23140D-xxBS10/DS10
576-word
40-bit
MSC23140D-xxBS10/DS10
72pin
72-pin
MSC23140D
DS1067
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Untitled
Abstract: No abstract text available
Text: K7R323684C K7R321884C K7R320984C Preliminary TM 1Mx36, 2Mx18 & 4Mx9 QDR II b4 SRAM 36Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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K7R323684C
K7R321884C
K7R320984C
1Mx36,
2Mx18
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JTAG 10P
Abstract: K7R641882M-FC25 K7R640982M-FC25 K7R643682M-FC20
Text: K7R643682M K7R641882M K7R640982M Preliminary 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM Document Title 2Mx36-bit, 4Mx18-bit, 8Mx9-bit QDRTM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Sep, 14 2002 Advance 0.1 1. Update AC timing characteristics.
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K7R643682M
K7R641882M
K7R640982M
2Mx36
4Mx18
2Mx36-bit,
4Mx18-bit,
K7R640982M
JTAG 10P
K7R641882M-FC25
K7R640982M-FC25
K7R643682M-FC20
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Untitled
Abstract: No abstract text available
Text: K7I323684C K7I321884C Preliminary 1Mx36 & 2Mx18 DDRII CIO b4 SRAM 36Mb DDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7I323684C
K7I321884C
1Mx36
2Mx18
11x15
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Untitled
Abstract: No abstract text available
Text: K7J643682M K7J641882M Preliminary 2Mx36 & 4Mx18 DDR II SIO b2 SRAM Document Title 2Mx36-bit, 4Mx18-bit DDR II SIO b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Mar. 9, 2003 Advance 0.1 1. Correct the JTAG ID register definition
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K7J643682M
K7J641882M
2Mx36
4Mx18
2Mx36-bit,
4Mx18-bit
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Untitled
Abstract: No abstract text available
Text: Preliminary K7I643682M K7I641882M 2Mx36 & 4Mx18 DDRII CIO b2 SRAM Document Title 2Mx36-bit, 4Mx18-bit DDRII CIO b2 SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Mar. 9, 2003 Advance 0.1 1. Correct the JTAG ID register definition
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K7I643682M
K7I641882M
2Mx36-bit,
4Mx18-bit
2Mx36
4Mx18
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MSC23137D
Abstract: No abstract text available
Text: This version: Feb. 23. 1999 Semiconductor MSC23137D-xxBS9/DS9 1,048,576-word x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The MSC23137D-xxBS9/DS9 is a fully decoded, 1,048,576-word x 36-bit CMOS dynamic random access memory module composed of nine 4Mb DRAMs in SOJ packages mounted with nine decoupling capacitors on a 72-pin glass
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MSC23137D-xxBS9/DS9
576-word
36-bit
MSC23137D-xxBS9/DS9
72-pin
MSC23137D
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MSC23V26418TD
Abstract: MSC23V26418TD-50BS8 MSC23V26418TD-60BS8 MSC23V26418TD-70BS8
Text: This version: Apr.26. 1999 Semiconductor MSC23V26418TD-xxBS8 2,097,152-Word x 64-Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The MSC23V26418TD-xxBS8 is a 2,097,152-word x 64-bit CMOS dynamic random access memory module which is composed of eight 16Mb 1Mx16 DRAMs in TSOP packages mounted with eight decoupling capacitors. This is an
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MSC23V26418TD-xxBS8
152-Word
64-Bit
MSC23V26418TD-xxBS8
1Mx16)
168-pin
MSC23V26418TD
MSC23V26418TD-50BS8
MSC23V26418TD-60BS8
MSC23V26418TD-70BS8
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HM5118160B
Abstract: HM5118160BJ-6 HM5118160BJ-7 HM5118160BJ-8 HM5118160BLJ-6 HM5118160BLJ-7 HM5118160BLJ-8 HM5118160BTT-6 HM5118160BTT-7
Text: HM5118160B Series 1048576-word x 16-bit Dynamic Random Access Memory ADE-203-476 Z Preliminary Rev. 0.0 Dec. 6, 1995 Description The Hitachi HM5118160B is a CMOS dynamic RAM organized as 1,048,576-word × 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118160B offers Fast Page
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HM5118160B
1048576-word
16-bit
ADE-203-476
576-word
16-bit.
ns/70
ns/80
HM5118160BJ-6
HM5118160BJ-7
HM5118160BJ-8
HM5118160BLJ-6
HM5118160BLJ-7
HM5118160BLJ-8
HM5118160BTT-6
HM5118160BTT-7
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Untitled
Abstract: No abstract text available
Text: HM5118160BI Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-580A Z Rev. 1.0 May. 20, 1996 Description T he H itachi H M 5118160B I is a C M O S dynam ic R A M organized as 1,048,576-w ord x 16-bit. It em ploys the m ost advanced C M O S technology fo r high perform ance and low pow er. T he H M 5118160B I offers
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HM5118160BI
1048576-word
16-bit
ADE-203-580A
5118160B
576-w
16-bit.
ns/70
ns/80
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Untitled
Abstract: No abstract text available
Text: - PRELIMINARY - February 1996 Edition 1.0 FUJITSU P R O D U C T PR O F IL E S H E E T MB81V4405C-60/-70 CMOS 1 M X 4 BIT HYPER PAGE MODE DRAM CMOS 1,048,576 x 4 bit Hyper Page Mode Dynamic RAM The Fujitsu MB81V4405C is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304
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MB81V4405C-60/-70
MB81V4405C
024-bits
MB81V4405C-60
MB81V4405C-70
26-LEAD
FPT-26P-M01)
F26001S-3C-3
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a10u
Abstract: B724e
Text: O K I Semiconductor MSM514101B/BL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The MSM514101B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514101B/BL is OKI's CMOS silicon gate process technology.
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MSM514101B/BL
304-Word
MSM514101B/BL
1024cycles/16ms,
128ms
a10u
B724e
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Untitled
Abstract: No abstract text available
Text: K M 4 4 C 1OOOD J CMOS DRAM ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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16Mx4,
512Kx8)
KM44C1000DJ
003414b
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Untitled
Abstract: No abstract text available
Text: KM44C 1 003 DJ CMOS D R AM ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , powér
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KM44C
KM44C1003DJ
G03416B
00341f
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Untitled
Abstract: No abstract text available
Text: K M4 1 V 4 0 0 0 D J CMOS DRAM ELECTRONICS 4 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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KM41V4000DJ
b414E
7Tb414E
003410b
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Untitled
Abstract: No abstract text available
Text: KM44V1000DJ CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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KM44V1000DJ
16Mx4,
512Kx8)
GD3474Ã
7Tb4142
GG3474T
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Untitled
Abstract: No abstract text available
Text: KM41C4000C, KM41V4000C CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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KM41C4000C,
KM41V4000C
1024cycles
00231fc
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Untitled
Abstract: No abstract text available
Text: KM44C1000D, KM44V1000D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 41 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power), a d
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KM44C1000D,
KM44V1000D
1024cycles
0G37Gflc
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a6ee
Abstract: No abstract text available
Text: KM41C4002C CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Static Column Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Static Column Mode CMOS DRAMs. Static Column Mode offers high speed random or sequential access of memory cells within the same row. Access time -5, -6, -7 or -8 and
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KM41C4002C
a6ee
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Untitled
Abstract: No abstract text available
Text: SGRAM MODULE KMM965G512BQ P N / KMM966G512BQ(P)N 4MB SGRAM MODULE (512Kx64 SODIMM based on 256Kx32 SGRAM) Unbuffered SGRAM Graphics 64-bit Non-ECC/Parity 144-pin SODIMM Revision 2.5 July 1998 Rev. 2.5 (July. 1998) ELECTRONICS SGRAM MODULE KMM965G512BQ(P)N / KMM966G512BQ(P)N
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KMM965G512BQ
KMM966G512BQ
512Kx64
256Kx32
64-bit
144-pin
143MHz)
KMM965G512B
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Untitled
Abstract: No abstract text available
Text: KMM5361000 DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 5361000 is a 1M bits X 36 Dynamic RAM high density memory module. The Samsung KM M 5361000 consist of eight CMOS 1M X 4 bit DRAMs
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KMM5361000
20-pin
72-pin
100ns
180ns
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