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    IXYS IGBT Search Results

    IXYS IGBT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TW030Z120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 60 A, 0.041 Ω@18V, TO-247-4L(X) Visit Toshiba Electronic Devices & Storage Corporation

    IXYS IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IGBT inverter calculation

    Abstract: 3 phase IGBT inverter design design drive circuit of IGBT inverter circuit using IGBT module igbt igbt sixpack IXAN0070 IGBT JUNCTION TEMPERATURE CALCULATION igbt 600V 100A short circuit IGBT CHIP 1700V
    Text: IXAN0070 Drive with the IXYS XPT IGBT IXYS used its expertise to design the optimal IGBT for motor drives applications By Iain Imrie, Jeroen van Zeeland, Ulrich Kelberlau, Vladimir Tsukanov and Elmar Wisotzki IXYS Corporation IXYS introduces the XPT IGBT, IXYS newest generation of short-circuit rated IGBTs with paralleling


    Original     		PDF IXAN0070 IGBT inverter calculation 3 phase IGBT inverter design design drive circuit of IGBT inverter circuit using IGBT module igbt igbt sixpack IXAN0070 IGBT JUNCTION TEMPERATURE CALCULATION igbt 600V 100A short circuit IGBT CHIP 1700V

    LBA716

    Abstract: IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division In April, 2012, Clare, Inc., officially became IXYS Integrated Circuits Division. IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division


    Original     		PDF N1016, CH-2555 LBA716 IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219

    mosfet 1200V 40A

    Abstract: Silicon MOSFET 1000V mosfet 1500v igbt testing pnp 1000V 2A IGBT Transistor 1200V, 25A MOSFET 1200v 3a igbt 20A 1200v pnp 1200V 2A 40N160
    Text: IXBH40N160 BiMOSFETTM Developed for High Voltage, High Frequency Applications Ralph E. Locher IXYS Corporation Santa Clara, CA by Olaf Zschieschang IXYS Semiconductor GmbH Lampertheim, Germany ABSTRACT In the IXBH40N160, IXYS has developed an extremely fast, homogeneous base IGBT by the


    Original     		PDF IXBH40N160 IXBH40N160, 200ns. mosfet 1200V 40A Silicon MOSFET 1000V mosfet 1500v igbt testing pnp 1000V 2A IGBT Transistor 1200V, 25A MOSFET 1200v 3a igbt 20A 1200v pnp 1200V 2A 40N160

    400A GenX3TM IGBTs in New Proprietary SMPD Power Packages

    Abstract: IXYS smpd IXYS MMIX1G320N60B3 solar ups features and classification
    Text: Press Release Contact: Ronnie Ganitano IXYS Corporation 1590 Buckeye Dr. Milpitas Ca. 95035 Tel: 408-457-9000 IXYS Introduces 600V/400A GenX3TM IGBTs in New Proprietary SMPD Power Packages Milpitas, CA. and Biel, Switzerland. October 12, 2010 – IXYS Corporation NASDAQ:IXYS is pleased to


    Original     		PDF 00V/400A MMIX1G320N60B3 400A GenX3TM IGBTs in New Proprietary SMPD Power Packages IXYS smpd IXYS solar ups features and classification

    IXAN0016

    Abstract: pnp transistor 1000v pnp 1200V 2A snubber CIRCUITS mosfet Silicon MOSFET 1000V mosfet 1000v MOSFET 1200v 3a mosfet 1500v 35N120A mosfet 1200V 40A
    Text: IXAN0016 IXBH40N160 BiMOSFETTM Developed for High Voltage, High Frequency Applications Ralph E. Locher IXYS Corporation Santa Clara, CA by Olaf Zschieschang IXYS Semiconductor GmbH Lampertheim, Germany ABSTRACT In the IXBH40N160, IXYS has developed an extremely fast, homogeneous base IGBT by the


    Original     		PDF IXAN0016 IXBH40N160 IXBH40N160, 200ns. IXAN0016 pnp transistor 1000v pnp 1200V 2A snubber CIRCUITS mosfet Silicon MOSFET 1000V mosfet 1000v MOSFET 1200v 3a mosfet 1500v 35N120A mosfet 1200V 40A

    IXEP1400

    Abstract: CPC1706 CPC1020N
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.


    Original     		PDF CH-2555 N1016, IXEP1400 CPC1706 CPC1020N

    IXEP1400

    Abstract: CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.


    Original     		PDF CH-2555 N1016, IXEP1400 CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844

    IXYS’ Clare Introduces 2 New Gate Driver Families

    Abstract: IXDN602 IXDD614 IXDN614 IXDI614 IXDI602 IXDF602 an 614 AN
    Text: PRESS RELEASE Contact: Catherine Austin Clare, Inc. Ph: 978-524-6823 Fax: 978-524-4900 IXYS’ Clare Introduces 2 New Gate Driver Families IXD_602 and IXD_ 614 Gate Driver ICs are ideal for driving IXYS’ power MOSFETs and IGBTs Beverly, MA and Biel, Switzerland. September 14, 2010 - IXYS Corporation


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    IXYS Clare Introduces New Family of 4A Dual-Channel Gate Drivers

    Abstract: ixdi604 ixd 604 IXDN604 IXDD604 IXDF604 ixd_604 8pin dual gate driver
    Text: PRESS RELEASE Contact: Catherine Austin Clare, Inc. Ph: 978-524-6823 Fax: 978-524-4900 IXYS Clare Introduces New Family of 4A Dual-Channel Gate Drivers IXD_604 Gate Driver ICs are ideal for driving IXYS power MOSFETs and IGBTs Beverly, MA and Biel, Switzerland. July 6, 2010 - IXYS Corporation NASDAQ:IXYS


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    IGBT 4000V

    Abstract: isoplus ixys mounting IXEL40N400 ixys IXLF19N250A Discrete IGBTS Igbts guide isoplus
    Text: Contact: Donald Humbert Tel: 408-982-0700 Fax: 408-496-0670 IXYS Releases 4000V/40A IGBT to Expand its Very High Voltage VHV IGBT Family SANTA CLARA, Calif.-(BUSINESS WIRE)-Feb. 13, 2006-IXYS Corporation (NASDAQ:SYXI News) announces the release of a new 4000V/40A IGBT, the IXEL40N400. IXYS' unique offering of


    Original     		PDF 000V/40A 2006--IXYS IXEL40N400. IGBT 4000V isoplus ixys mounting IXEL40N400 ixys IXLF19N250A Discrete IGBTS Igbts guide isoplus

    Inverter Welder

    Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter
    Text: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM


    Original     		PDF PB60IGBTA3B3C3 Inverter Welder inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter

    IXAN0063

    Abstract: IGBT THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS schematic diagram UPS IGBT Mohan power electronics converters applications a transistor igbt BJT safe operating area IGBT PNP input output bjt npn transistor SCHEMATIC servo dc IGBTS
    Text: Insulated Gate Bipolar Transistor IGBT Basics Abdus Sattar, IXYS Corporation IXAN0063 1 This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs.


    Original     		PDF IXAN0063 2001Indonesia IXAN0063 IGBT THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS schematic diagram UPS IGBT Mohan power electronics converters applications a transistor igbt BJT safe operating area IGBT PNP input output bjt npn transistor SCHEMATIC servo dc IGBTS

    Untitled

    Abstract: No abstract text available
    Text: Welcome to the world of IXYS Semiconductors! IXYS is made up of a team that is dedicated to providing efficient, cost effective, semiconductor solutions to meet a multitude of power control needs. Headquartered in California’s Silicon Valley, IXYS has differentiated itself by focusing on the higher power end of the semiconductor product spectrum.


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    IXAN0022

    Abstract: KU4-499 KU4-495 KU4-498 isoplus ixys cross KU4499 isoplus ixys mounting KU3-381 4490 mosfet
    Text: IXAN0022 Capitalizing on the Advantages of ISOPLUS Products Introduction IXYS Corporation offers unique power packages with internal isolation, and performance and reliability advantages. The IXYS isolated packages include ISOPLUS220TM, ISOPLUS247TM, ISOPLUS


    Original     		PDF IXAN0022 ISOPLUS220TM, ISOPLUS247TM, ISOPLUS264 ISOPLUS220, ISOLPUS247 advantKU4-498/X ISOPLUS220 KU4-498/X O-247 IXAN0022 KU4-499 KU4-495 KU4-498 isoplus ixys cross KU4499 isoplus ixys mounting KU3-381 4490 mosfet

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


    Original     		PDF IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P

    EVLD02

    Abstract: IXDD415SI PUSH PULL MOSFET DRIVER dip IXLD02SI IXDD DEIC420 IXDD414CI RF MOSFETs 10mhz mosfet EVDN404
    Text: MOSFET DRIVER IC'S SWITCH MODE POWER SUPPLIES & RF GENERATORS January 2003 These ultra-fast high current drivers are optimized to drive IXYS RF MOSFETs and IXYS IGBTs for high efficiency performance in RF generators, laser diode drivers, pulse generators, motor drive and power conversion applications. They


    Original     		PDF O-263 O-220 DEIC420 45MHz. EVDD404 EVDF404 EVLD02 IXDD415SI PUSH PULL MOSFET DRIVER dip IXLD02SI IXDD IXDD414CI RF MOSFETs 10mhz mosfet EVDN404

    Westcode Announces New ‘Megawatt’ Press-Pack IGBT Product

    Abstract: press-pack igbt T2250AB25E
    Text: Press Release Contacts: Westcode Semiconductors Ltd, UK - Frank Wakeman, +44 1249 444524. IXYS Long Beach – Ray Segall, 562-296-6584 US sales enquiries only Westcode Announces New ‘Megawatt’ Press-Pack IGBT Product Biel, Switzerland, November 18, 2009 — IXYS Corporation (NASDAQ:IXYS) announced that


    Original     		PDF

    IXAN0071

    Abstract: MM1X1G320N60B3 dow corning silicone compound 100N DC340
    Text: IXAN0071 The SMPD Package and its Mounting Instructions Abdus Sattar, IXYS Corporation Introduction: IXYS has expanded its ISOPLUS package portfolio by offering a new package called the SMPD package. An illustration of the package shown in Figure 1 shows an


    Original     		PDF IXAN0071 MMIX1T600N04T2 MMIX1F520N075T2 MM1X1G320N60B3 21-pin IXAN0071 MM1X1G320N60B3 dow corning silicone compound 100N DC340

    IXYS CORPORATION

    Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
    Text: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS


    Original     		PDF DMA10P1600PZ /1600V) CMA50E1600TZ DSP45-16TZ O-263 D-68623 CH-2555 IXYS CORPORATION MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ

    Insulated Gate Bipolar Transistors

    Abstract: igbt transistors IGBT ixys igbt
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode 2000 IXYS All rights reserved B2 - 1


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    ixys

    Abstract: No abstract text available
    Text: IXYS Power Semiconductors for the World of Power Electronics IXYS Corporation is dedicated to providing advanced power semiconductors to meet the demanding requirements of power electronic applications. Our product portfolio of Power MOSFETs, IGBTs, SCHOTTKYs, FREDs, Thyristors,


    OCR Scan     		PDF

    single phase inverter IGBT

    Abstract: Single Phase to Three Phase Converter 3 phase igbt INVERTER ac motor eupec FB15R06KL4 inverter igbt circuit diagrams single phase to 3 phase inverter AC FP10R12YT3 FP15R12YT3 FP10R12YT3 eupec IGBT cross reference
    Text: □ IXYS w Overview: IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond OCB module packaging technology, located in Lampertheim, Germany has extended its portfolio of IGBT


    OCR Scan     		PDF MIAA10WD600TMH FB10R06KL4G MIAA15WD600TMH MIAA20WD600TMH FB15R06KL4 FB20R06KL4 MIAA10WB600TMH FP10R06KL4 MIAA15WB600TMH FP15R06KL4 single phase inverter IGBT Single Phase to Three Phase Converter 3 phase igbt INVERTER ac motor eupec FB15R06KL4 inverter igbt circuit diagrams single phase to 3 phase inverter AC FP10R12YT3 FP15R12YT3 FP10R12YT3 eupec IGBT cross reference

    Untitled

    Abstract: No abstract text available
    Text: IXYS High Power Semiconductors for the World of Power Electronics IXYS Corporation is dedicated to providing advanced power semiconductors to meet the demanding require­ ments of power electronic applications. Our product portfolio o f Power MOSFETs, IGBTs, FREDs, Thyristors,


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: IXYS Assembly Instructions for bipolar Chips Assembly Instructions for MOS/IGBT Chips Assem bling Recommended Solder System IXYS bipolar semiconductor chips have a soft-solderable, multi­ layer metallization Ti/Ni/Ag on the bottom side and, on top, either the same metallization scheme or an alumunium layer


    OCR Scan     		PDF