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    22N60P Search Results

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    22N60P Price and Stock

    Littelfuse Inc IXFP22N60P3

    MOSFET N-CH 600V 22A TO220AB
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    DigiKey IXFP22N60P3 Tube 301 1
    • 1 $3.81
    • 10 $3.81
    • 100 $2.5878
    • 1000 $2.53112
    • 10000 $2.53112
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    Littelfuse Inc IXTQ22N60P

    MOSFET N-CH 600V 22A TO3P
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    DigiKey IXTQ22N60P Tube 110 1
    • 1 $3.69
    • 10 $3.69
    • 100 $2.92233
    • 1000 $2.45
    • 10000 $2.45
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    IXYS Corporation IXFV22N60P

    MOSFET N-CH 600V 22A PLUS220
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    DigiKey IXFV22N60P Tube
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    IXYS Corporation IXFC22N60P

    MOSFET N-CH 600V 12A ISOPLUS220
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    Littelfuse Inc IXFH22N60P

    MOSFET N-CH 600V 22A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH22N60P Tube 300
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    • 1000 $5.2693
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    22N60P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    22N60P

    Abstract: No abstract text available
    Text: IXTQ 22N60P IXTT 22N60P PolarHVTM Power MOSFET VDSS ID25 RDS on = 600 V = 22 A ≤ 330 mΩ Ω N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous


    Original     		PDF 22N60P 22N60P O-268

    22n60p

    Abstract: 22n60 IXTQ22N60P PLUS220SMD
    Text: PolarHVTM Power MOSFET IXTQ 22N60P IXTV 22N60P IXTV 22N60PS VDSS ID25 RDS on = 600 V = 22 A ≤ 350 mΩ Ω N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 22N60P 22N60PS 22n60p 22n60 IXTQ22N60P PLUS220SMD

    IXFV22N60PS

    Abstract: 22N60P PLUS220SMD IXFV22N60P FS15-12
    Text: PolarHVTM HiPerFET Power MOSFETs IXFH 22N60P IXFV 22N60P IXFV 22N60PS VDSS = 600 V ID25 = 22 A RDS on ≤ 350 m Ω ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original     		PDF 22N60P 22N60PS O-247 22N60P IXFV22N60P 02-17-06-B IXFV22N60PS PLUS220SMD IXFV22N60P FS15-12

    22N60P

    Abstract: IXTQ22N60P siemens 30 PLUS220SMD
    Text: IXTQ 22N60P IXTV 22N60P IXTV 22N60PS PolarHVTM Power MOSFET VDSS ID25 = 600 V = 22 A ≤ 330 mΩ Ω RDS on N-Channel Enhancement Mode Preliminary Data Sheet TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 22N60P 22N60PS PLUS220 PLUS220SMD 22N60P IXTQ22N60P siemens 30 PLUS220SMD

    22N60P

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFETs VDSS ID25 = = RDS on ≤ ≤ trr IXFH 22N60P IXFT 22N60P N-Channel Enhancement Mode Fast Intrinsic Diode; Avalanche Rated 600 V 22 A Ω 330 mΩ 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 22N60P 22N60P

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFETs IXFH 22N60P IXFV 22N60P IXFV 22N60PS VDSS = 600 V ID25 = 22 A RDS on ≤ 350 m Ω ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original     		PDF 22N60P 22N60PS O-247 22N60P IXFV22N60P 02-17-06-B

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 600 V ID25 = 12 A Ω RDS on ≤ 360 mΩ ≤ 200 ns trr IXFC 22N60P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings


    Original     		PDF ISOPLUS220TM 22N60P 02-17-06-B

    22N60P

    Abstract: 22n60 nt314 C4522 IXFC22N60P
    Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 600 V ID25 = 12 A Ω RDS on ≤ 360 mΩ ≤ 200 ns trr IXFC 22N60P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings


    Original     		PDF ISOPLUS220TM 22N60P 02-17-06-B 22N60P 22n60 nt314 C4522 IXFC22N60P

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTQ 22N60P IXTV 22N60P IXTV 22N60PS VDSS ID25 RDS on = 600 V = 22 A ≤ 350 mΩ Ω N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 22N60P 22N60PS

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


    Original     		PDF IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p