Untitled
Abstract: No abstract text available
Text: High Voltage BIMOSFETTM IXBH 40N140 VCES IXBH 40N160 Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode = = = = IC25 VCE sat tfi 1400/1600 V 33 A 7V 35 ns TO-247 AD Preliminary data Symbol Test Conditions Maximum Ratings 40N140 40N160 VCES TJ = 25°C to 150°C
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40N140
40N160
O-247
40N140
IXBH40
D-68623
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Untitled
Abstract: No abstract text available
Text: IXBH 40N160 High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IC25 = 33 A VCES = 1600 V VCE sat = 6.2 V typ. tfi = 40 ns N-Channel, Enhancement Mode C TO-247 AD G C E G C (TAB) E G = Gate, E = Emitter, Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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40N160
O-247
IXBH40
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40N160
Abstract: 40N140
Text: Advanced Technical Information IXBF 40N140 IC25 IXBF 40N160 VCES High Voltage BIMOSFETTM VCE sat tf in High Voltage ISOPLUS i4-PACTM = = = = 28 A 1400/1600 V 6.2 V 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C
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40N140
40N160
40N140
40N160
IXBF40
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Untitled
Abstract: No abstract text available
Text: IXBF 40N160 IC25 VCES VCE sat tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 28 A = 1600 V = 6.2 V = 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C
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40N160
IXBF40
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BiMOSFET
Abstract: 40N160
Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBJ 40N140 IXBJ 40N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C G C E E Symbol Conditions Maximum Ratings 40N140 40N160 VCES TJ = 25°C to 150°C 1400 1600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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40N140
40N160
O-268
40N160
O-268
IXBH40N160
BiMOSFET
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IXBH 40N160
Abstract: No abstract text available
Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C = = = = 1400/1600 V 33 A 6.2 V typ. 40 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Symbol Conditions Maximum Ratings
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40N140
40N160
O-247
40N160
IXBH40
IXBH 40N160
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40N160
Abstract: 40N140
Text: IXBF 40N160 IC25 VCES VCE sat tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 28 A = 1600 V = 6.2 V = 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C
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40N160
vol600
IXBF40
40N160
40N140
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40N140
Abstract: 40N160
Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C = = = = 1400/1600 V 33 A 6.2 V typ. 40 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Symbol Conditions Maximum Ratings
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40N140
40N160
O-247
IXBH40
40N140
40N160
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40N160
Abstract: IXBF 40N140 IXBF 40N160 40N140
Text: Advanced Technical Information IXBF 40N140 IC25 IXBF 40N160 VCES High Voltage BIMOSFETTM VCE sat tf in High Voltage ISOPLUS i4-PACTM = 28 A = 1400/1600 V = 6.2 V = 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C
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40N140
40N160
40N140
40N160
IXBF40
IXBF 40N140
IXBF 40N160
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40N14
Abstract: No abstract text available
Text: Advanced Technical Information IXBF 40N140 IC25 IXBF 40N160 VCES High Voltage BIMOSFETTM VCE sat tf in High Voltage ISOPLUS i4-PACTM = 28 A = 1400/1600 V = 6.2 V = 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C
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40N140
40N160
40N160
40N14
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40N140
Abstract: 40N160
Text: IXBH 40N160 High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IC25 = 33 A VCES = 1600 V VCE sat = 6.2 V typ. tfi = 40 ns N-Channel, Enhancement Mode C TO-247 AD G C E G C (TAB) E G = Gate, E = Emitter, Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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40N160
O-247
IXBH40
40N140
40N160
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40N140
Abstract: 40N160
Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBJ 40N140 IXBJ 40N160 VCES IC25 VCE sat tfi = = = = 1400/1600 V 33 A 7.1 V 40 ns N-Channel, Enhancement Mode C G E Symbol Test Conditions Maximum Ratings 40N140 40N160 TO-268 VCES TJ = 25°C to 150°C
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40N140
40N160
O-268
IXBH40
40N140
40N160
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IXBH 40N160
Abstract: IXBJ 40N160 40N140 40N160
Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBJ 40N140 IXBJ 40N160 VCES IC25 VCE sat tfi = = = = 1400/1600 V 33 A 7.1 V 40 ns N-Channel, Enhancement Mode C G E Symbol Test Conditions Maximum Ratings 40N140 40N160 TO-268 VCES TJ = 25°C to 150°C
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40N140
40N160
O-268
IXBH40
IXBH 40N160
IXBJ 40N160
40N140
40N160
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IXAN0015
Abstract: 0015 GE SCR Manual Design pure sine wave inverter using transformer contraves modern and radar transmitters doppler radar circuit for speed sensing contraves drive X-band doppler radar module diagram radar circuit
Text: Home < IEEE PEDS 2001 - INDONESIA IXAN0015 Use of BiMOSFETs in Modern Radar Transmitters Ralph E. Locher and Abhijit D. Pathak, Member, IEEE g reduced by irradiation. The end result is a device, which can be optimized for either high frequency or low frequency
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IXAN0015
IXAN0015
0015
GE SCR Manual
Design pure sine wave inverter using transformer
contraves
modern and radar transmitters
doppler radar circuit for speed sensing
contraves drive
X-band doppler radar module
diagram radar circuit
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IXAN0016
Abstract: pnp transistor 1000v pnp 1200V 2A snubber CIRCUITS mosfet Silicon MOSFET 1000V mosfet 1000v MOSFET 1200v 3a mosfet 1500v 35N120A mosfet 1200V 40A
Text: IXAN0016 40N160 BiMOSFETTM Developed for High Voltage, High Frequency Applications Ralph E. Locher IXYS Corporation Santa Clara, CA by Olaf Zschieschang IXYS Semiconductor GmbH Lampertheim, Germany ABSTRACT In the 40N160, IXYS has developed an extremely fast, homogeneous base IGBT by the
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IXAN0016
IXBH40N160
IXBH40N160,
200ns.
IXAN0016
pnp transistor 1000v
pnp 1200V 2A
snubber CIRCUITS mosfet
Silicon MOSFET 1000V
mosfet 1000v
MOSFET 1200v 3a
mosfet 1500v
35N120A
mosfet 1200V 40A
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Untitled
Abstract: No abstract text available
Text: □IXYS High Voltage BIMOSFET M onolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 VCES ^C25 VCE sat tfi N-Channel, Enhancement Mode TO-247 AD Symbol Test Conditions VCES Tj = 25°C to 150°C 1400 1600 V VCGR Tj = 25°C to 150°C; RGE = 1 MQ 1400
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40N140
40N160
O-247
40N160
D-68623
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st 247
Abstract: No abstract text available
Text: DIXYS Advanced Technical Information High Voltage BIMOSFET Monolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 1400/1600 V 33 A 7V 30 ns CES ^C25 v CE sat t N-Channel, Enhancement Mode TO-247 AD S ym b o l T est C o n d itio n s M axim um R atings
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40N140
40N160
O-247
40N160
st 247
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Untitled
Abstract: No abstract text available
Text: High Voltage BIMOSFET Monolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 N-Channel, Enhancement Mode VCES ^C25 v¥ CE sat tfi 1400/1600 V 40 A 6V 140 ns Advanced data Symbol Test Conditions V CES V CGR Td = 25°C to 150°C 1400 1600 V ^ 1400 1600
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40N140
40N160
40N160
O-247
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diode 1.5 ke 36 ca
Abstract: 40N160
Text: □IXYS High Voltage BIMOSFET M onolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 VCES ^C25 VCE sat tfi N-Channel, Enhancement Mode 1400/1600 V 33 A 7V 35 ns TO-247 AD Preliminary data Symbol Test Conditions Max mum Ratings 40N140 40N160 V CES
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40N140
40N160
O-247
40N160
D-68623
diode 1.5 ke 36 ca
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Untitled
Abstract: No abstract text available
Text: □IXYS High Voltage BIMOSFET M onolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 N-Channel, Enhancement Mode Test Conditions V CES Tj = 25°C to 150°C 1400 1600 V V CGR ^ 1400 1600 V = 25°C to 150°C; RGE = 1 M£i Continuous ±20 V V GEM Transient
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40N140
40N160
O-247
D-68623
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40N160
Abstract: 6c-5 40N140 BiMOSFET
Text: □ IX Y S High Voltage BIMOSFET Monolithic Bipolar MOS Transistor IXBJ 40N140 IXBJ 40N160 VCES = 1400/1600 V N-Channel, Enhancement Mode S ym bol T e s t C o n d itio n s M axim u m R a tin g s 40N 140 40N 160 V CES T j = 25°C to 150°C 1400 1600 V V CGR
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40N140
40N160
40N140
40N160
6c-5
BiMOSFET
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diode DSDI 9
Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A
Text: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B
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O-247
O-220
O-264
IXGH24N50B
IXGH24N50BU1
IXGH50N50B
10N60A
IXGH24N60B
IXGH24N60BU1
IXGH50N60B
diode DSDI 9
IXLN35N120AU1
diode DSDI 12
IXLH35N120A
DSP8-12A
a1931
DSP8-08AS
95-06DA
IXln35N120A
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12N60c equivalent
Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t
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ISOPLUS220TM
US247TM
247TM
ISOPLUS22rM
ISOPLUS227TM
IXFE180N10
IXFE73N30Q
IXFE48N50Q
IXFE48N50QD2
12N60c equivalent
13N50 equivalent
equivalent of IGBT 12N60C
motor IG 2200 19
ixlf 19n250a
24N60CD1
19N250
32N50
004II
27N80Q
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40n80
Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18
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5-10A
52-14N01
52-16N01
55-12N
55-14N07
55-18N
60-08N
60-16N
62-08N
62-12N
40n80
13NB0
60N60
dsei 20-12
33N120
VUO 35-12 N 0 7
DS117-12A
DS117-12
26n60
4410PI
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