DSEE8-08CC
Abstract: 10P40
Text: DSEE 8-08CC HiPerDynFREDTM Epitaxial Diode IFAV = 10 A VRRM = 800 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 800 400 Type ISOPLUS 220LVTM DSEE 8-08CC 1 2 3 G Preliminary Data Sheet Conditions Maximum Ratings A A IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine
|
Original
|
PDF
|
8-08CC
ISOPLUS220TM
220LVTM
10P400PJ
DS99053
DSEE8-08CC
ISOPLUS220LV
DSEE8-08CC
10P40
|
35N120D1
Abstract: D-68623 IXER 35N120D1
Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C
|
Original
|
PDF
|
35N120D1
247TM
E153432
35N120D1
D-68623
IXER 35N120D1
|
24N50
Abstract: 26N50 .24n50 IXFH26N50 IXFR24N50 IXFR26N50
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
|
Original
|
PDF
|
26N50
ISOPLUS247TM
24N50
247TM
IXFR26N50
IXFR24N50
IXFH26N50
24N50
26N50
.24n50
IXFR24N50
IXFR26N50
|
ixys dsi
Abstract: 30-08AC 30-12AC ir 2411
Text: DSI 30 Rectifier Diode ISOPLUS220TM VRRM = 800 - 1200 V IF AV M = 30 A Electrically Isolated Back Surface VRSM VRRM V V 900 1300 800 1200 Type ISOPLUS 220TM DSI 30-08AC DSI 30-12AC A C Preliminary Data Sheet C A Symbol IFRMS IFAV IFSM I2t Conditions Maximum Ratings
|
Original
|
PDF
|
ISOPLUS220TM
220TM
30-08AC
30-12AC
ISOPLUS220
DS98791A
ixys dsi
30-08AC
30-12AC
ir 2411
|
Untitled
Abstract: No abstract text available
Text: Advanced Technical Information Dual HiPerFREDTM Epitaxial Diode DSEE 55-24N1F in ISOPLUS i4-PACTM VRRM = 2400 V IF AV M = 55 A trr = 220 ns 1 3 1 3 5 5 Features Rectifier Bridge Symbol Conditions Maximum Ratings VRRM c VRRM IFAV IF(AV)M IFSM TC = 90°C; sine 180°
|
Original
|
PDF
|
55-24N1F
|
metal rectifier diode
Abstract: No abstract text available
Text: Three Phase Rectifier Bridge FUO 22-12N in ISOPLUS i4-PACTM VRRM = 1200 V ID AV M = 27 A IFSM = 100 A Preliminary Data 1 5 Symbol Features Conditions Maximum Ratings VRRM IFAV ID(AV)M IFSM TC = 90°C; sine 180° (per diode) TC = 90°C TVJ = 25°C; t = 10 ms; sine 50 Hz
|
Original
|
PDF
|
22-12N
metal rectifier diode
|
60n6
Abstract: 60N60 IC tl 072 IC100 60N60U1
Text: Low VCE sat IGBT with Diode IXGR 60N60U1 ISOPLUS247TM VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600
|
Original
|
PDF
|
60N60U1
ISOPLUS247TM
IC100
60n6
60N60
IC tl 072
IC100
60N60U1
|
TO247AD
Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247
Text: IXKR 40N60C CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions
|
Original
|
PDF
|
40N60C
ISOPLUS247TM
247TM
E153432
TO247AD
TO247AD package
40n60c
CoolMOS Power Transistor
ISOPLUS247
|
50n50
Abstract: 55N50 150N50 IXFK55N50
Text: VDSS HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 RDS(on) Ω 100 mΩ Ω 90 mΩ 500 V 43 A 500 V 48 A trr ≤ 250 ns Single Die MOSFET Maximum Ratings ISOPLUS 247TM Symbol Test Conditions VDSS VDGR
|
Original
|
PDF
|
ISOPLUS247TM
50N50
55N50
247TM
IXFK55N50
50N50
55N50
150N50
|
26N50
Abstract: IXFC 26N50 IXFH26N50 24N50 ixfc26n50 .26n50 .24n50 IXFC24N50
Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface IXFC 26N50 IXFC 24N50 ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM
|
Original
|
PDF
|
ISOPLUS220TM
26N50
24N50
220LVTM
IXFC26N50
IXFC24N50
IXFH26N50
728B1
123B1
728B1
26N50
IXFC 26N50
24N50
ixfc26n50
.26n50
.24n50
IXFC24N50
|
Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFR 58N20Q ISOPLUS247TM Q-Class Electrically Isolated Back Surface VDSS = = ID25 RDS(on) = 200 V 50 A Ω 40 mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet
|
Original
|
PDF
|
58N20Q
ISOPLUS247TM
728B1
|
ISOPLUS-264
Abstract: CPC1786J CPC1976Y ISOPLUS264 CPC1708J cpc1909 CPC1906Y CPC1709J CPC1978J CPC1916Y
Text: Power Solid State Relays i4-PAC , ISOPLUS264, and the Power SIP Relays Features • Solid State Reliability • Handle loads up to 15Arms • Voltage ratings from 60V - 1000V • Low On Resistance • Compact i4-PAC™ Package with low thermal resistance and heat sink
|
Original
|
PDF
|
ISOPLUS264,
15Arms
optically-coup264
Q1-05
ISOPLUS264
ISOPLUS-264
CPC1786J
CPC1976Y
ISOPLUS264
CPC1708J
cpc1909
CPC1906Y
CPC1709J
CPC1978J
CPC1916Y
|
16-06A
Abstract: DSEA16-06AC 1606a
Text: DSEA16-06AC IFAV = 2x8 A VRRM = 600 V trr = 35 ns HiPerFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VRRM V V 600 600 Type DSEA16-06AC ISOPLUS220TM 1 2 1 3 2 3 Isolated back surface * * Patent pending Symbol
|
Original
|
PDF
|
DSEA16-06AC
ISOPLUS220TM
6A/DSEC16-06A
ISOPLUS220
16-06A
DSEA16-06AC
1606a
|
150N15
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 150N15 VDSS = 150 V ID25 = 105 A RDS on = 12.5 mW (Electrically Isolated Backside) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
|
Original
|
PDF
|
ISOPLUS247TM
150N15
|
|
|
DA QG
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power Mosfet FMM 75-01F ID25 VDSS RDSon -Phaseleg Topologyin ISOPLUS i4-PACTM = 75 A = 100 V = 25 mW 1 5 MOSFETs Features Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C IF25
|
Original
|
PDF
|
75-01F
75-01F
DA QG
|
metal rectifier diode
Abstract: 4 pin bridge rectifier package FBO16-12N E 72873
Text: FBO16-12N VRRM = 1200 V Single Phase Rectifier Bridge ID AV M = 22 A IFSM = 100 A in ISOPLUS i4-PACTM Preliminary Data 1 5 Rectifier Bridge Symbol Features Conditions Maximum Ratings VRRM IFAV ID(AV)M IFSM TC = 90°C; sine 180° (per diode) TC = 90°C TVJ = 25°C; t = 10 ms; sine 50 Hz
|
Original
|
PDF
|
FBO16-12N
16-12N
metal rectifier diode
4 pin bridge rectifier package
E 72873
|
70N15
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 70N15 ISOPLUS247TM Electrically Isolated Backside trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
|
Original
|
PDF
|
70N15
ISOPLUS247TM
250ns
70N15
|
DSEC29
Abstract: DSEC 29 DSEC
Text: HiPerFREDTM Epitaxial Diode DSEA 59-06BC DSEC 59-06BC = 2x30 A = 600 V = 35 ns IFAV VRRM trr ISOPLUS220TM Electrically Isolated Back Surface DSEA Preliminary Data Sheet VRSM VRRM V V 600 600 ISOPLUS220TM E153432 Type 1 DSEC 2 3 2 3 DSEA 59-06BC DSEC 59-06BC
|
Original
|
PDF
|
59-06BC
ISOPLUS220TM
E153432
29-06B
DS98817A
DSEC29
DSEC 29
DSEC
|
CoolMOS Power Transistor
Abstract: POWER MOSFET 4600 UPS SIEMENS 25N80C
Text: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V ID25 = 20 A Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
|
Original
|
PDF
|
ISOPLUS220TM
25N80C
E153432
065B1
728B1
123B1
CoolMOS Power Transistor
POWER MOSFET 4600
UPS SIEMENS
25N80C
|
35N120
Abstract: No abstract text available
Text: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20
|
Original
|
PDF
|
247TM
35N120BD1
728B1
35N120
|
IXGR40N60
Abstract: 40n60 40N60c 40N60CD1 IXGR40N60CD1
Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60C IXGR 40N60CD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 75 A = 2.5 V = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
|
Original
|
PDF
|
ISOPLUS247TM
40N60C
40N60CD1
IC110
E153432
728B1
IXGR40N60
40n60
40N60c
IXGR40N60CD1
|
transistor da 307
Abstract: 24N10
Text: Advanced Technical Information HiPerFETTM IXFF 24N100 ID25 = 22 A VDSS = 1000 V Power Mosfet RDSon = 390 mW in High Voltage ISOPLUS I4-PACTM 1 5 Features MOSFETs Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C
|
Original
|
PDF
|
24N100
24N100
transistor da 307
24N10
|
200n60
Abstract: robot control
Text: Preliminary Data Sheet HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat tfi = = = = 600 V 175 A 2.1 V 160ns E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
|
Original
|
PDF
|
200N60B
160ns
227TM
728B1
200n60
robot control
|
70n60
Abstract: IXFL70N60Q2
Text: Preliminary Technical Information IXFL70N60Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 600V 37A Ω 88mΩ 250ns ISOPLUS264
|
Original
|
PDF
|
IXFL70N60Q2
250ns
ISOPLUS264
70N60Q2
8-08-A
70n60
IXFL70N60Q2
|
