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Littelfuse Inc IXTQ18N60P MOSFET N-CH 600V 18A TO3P
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DigiKey	IXTQ18N60P	Tube			300	1 - 10 - 100 - 1000 $3.8859 10000 $3.8859	Buy Now
IXYS Corporation IXTV18N60P MOSFET N-CH 600V 18A PLUS220
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Littelfuse Inc IXFH18N60P MOSFET N-CH 600V 18A TO247AD
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DigiKey	IXFH18N60P	Tube			1	1 $6.12 10 $6.12 100 $4.886 1000 $3.85733 10000 $3.25302	Buy Now
IXYS Corporation IXFV18N60P MOSFET N-CH 600V 18A PLUS220
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DigiKey	IXFV18N60P	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXTP18N60PM MOSFET N-CH 600V 9A TO220
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DigiKey	IXTP18N60PM	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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18N60P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: VDSS = 600 V ID25 = 18 A Ω RDS on ≤ 420 mΩ IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	18N60P 18N60PS 18N60P
IXTV18N60P Abstract: PLUS220SMD Text: IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET VDSS ID25 = 600 V = 18 A ≤ 400 mΩ Ω RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous	Original	PDF	18N60P 18N60PS PLUS220 IXTV18N60P 2005IXYS IXTV18N60P PLUS220SMD
Untitled Abstract: No abstract text available Text: IXTQ 18N60P IXTT 18N60P PolarHVTM Power MOSFET VDSS ID25 RDS on = 600 V = 18 A ≤ 400 mΩ Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous	Original	PDF	18N60P 18N60P O-268 O-268 405B2
PLUS220SMD Abstract: No abstract text available Text: IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET VDSS = 600 V ID25 = 18 A Ω RDS on ≤ 420 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	18N60P 18N60PS 18N60P PLUS220SMD
N-channel MOSFET to-247 Abstract: PLUS220SMD Text: PolarHVTM HiPerFET Power MOSFET IXFH 18N60P IXFV 18N60P IXFV 18N60PS VDSS ID25 RDS on trr = = ≤ ≤ 600 V 18 A Ω 400 mΩ 200 ns N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	18N60P 18N60PS O-247 PLUS220 15lts N-channel MOSFET to-247 PLUS220SMD
18N60P Abstract: PLUS220SMD IXFH18N60P 18N60PS 18N60 Text: PolarHVTM HiPerFET Power MOSFET IXFH 18N60P IXFV 18N60P IXFV 18N60PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS	Original	PDF	18N60P 18N60PS 18N60P PLUS220SMD IXFH18N60P 18N60PS 18N60
Untitled Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET IXFH 18N60P IXFV 18N60P IXFV 18N60PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	18N60P 18N60PS O-247 PLU30 18N60P
2n60p Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond	Original	PDF	IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	PDF	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p