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    26N60P Search Results

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    26N60P Price and Stock

    Littelfuse Inc IXTT26N60P

    MOSFET N-CH 600V 26A TO268
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    DigiKey IXTT26N60P Tube 300
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    • 1000 $7.67537
    • 10000 $7.67537
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    Littelfuse Inc IXFT26N60P

    MOSFET N-CH 600V 26A TO268
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    DigiKey IXFT26N60P Tube 300
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    Littelfuse Inc IXFH26N60P

    MOSFET N-CH 600V 26A TO247AD
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    DigiKey IXFH26N60P Tube 1
    • 1 $9.02
    • 10 $9.02
    • 100 $7.20033
    • 1000 $5.68443
    • 10000 $4.79387
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    IXYS Corporation IXTV26N60P

    MOSFET N-CH 600V 26A PLUS220
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    DigiKey IXTV26N60P Tube
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    IXYS Corporation IXTQ26N60P

    MOSFET N-CH 600V 26A TO3P
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    DigiKey IXTQ26N60P Tube
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    Mouser Electronics IXTQ26N60P
    • 1 -
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    • 100 $4.99
    • 1000 $3.79
    • 10000 $3.06
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    TME IXTQ26N60P 1
    • 1 $4.67
    • 10 $3.71
    • 100 $3.34
    • 1000 $3.34
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    Find more 26N60P price and stock on Findchips.com

    26N60P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    26N60P

    Abstract: PLUS220SMD
    Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 = = RDS on ≤ ≤ trr TO-247 (IXFH) Symbol


    Original     		PDF 26N60P 26N60PS O-247 PLUS220SMD PLUS220 O-268 26N60P PLUS220SMD

    26n60

    Abstract: 26N60P PLUS220SMD
    Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions


    Original     		PDF 26N60P 26N60PS O-247 PLUS220SMD PLUS220 O-268 26n60 26N60P PLUS220SMD

    max2678

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A RDS on ≤ 270 m Ω ≤ 200 ns trr IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original     		PDF 26N60P 26N60PS O-247 O-268 PLUS220 max2678

    Untitled

    Abstract: No abstract text available
    Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET VDSS ID25 = = RDS on ≤ ≤ trr IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated TO-247 (IXFH) Symbol


    Original     		PDF 26N60P 26N60PS O-247 405B2 26N60P PLUS220

    DSA003703

    Abstract: 26n60
    Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions


    Original     		PDF 26N60P 26N60PS O-247 O-268 DSA003703 26n60

    26N60P

    Abstract: TO-248
    Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions


    Original     		PDF 26N60P 26N60PS O-247 O-268 PLUS220 PLUS220SMD TO-248

    5007a

    Abstract: No abstract text available
    Text: IXTH 26N60P IXTQ 26N60P IXTT 26N50P IXTV 26N60P IXTV 26N60PS PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 26 A RDS on ≤ 270 m Ω TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original     		PDF 26N60P 26N50P 26N60PS O-247 O-268 26N60P 5007a

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET VDSS = 800 V ID25 = 16 A Ω RDS on ≤ 600 mΩ ≤ 250 ns trr IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 16N80P 16N80PS O-247 26N60P 26N60P 26N60PS

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


    Original     		PDF IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P

    16N80P

    Abstract: 26N60P PLUS220SMD siemens
    Text: PolarHVTM Power MOSFET VDSS = 800 V ID25 = 16 A Ω RDS on ≤ 600 mΩ ≤ 250 ns trr IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 16N80P 16N80PS O-247 26N60P 26N60P 26N60PS 16N80P PLUS220SMD siemens

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    IXFH26N60P

    Abstract: IXFV26N60P 26n60 26N60PS 26N60P IXFT26N60P IXFV26N60PS PLUS220SMD ixfh26n60
    Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A Ω RDS on ≤ 270 mΩ ≤ 200 ns trr 26N60P 26N60P 26N60P 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS O-247) 26N60P 26N60P 26N60PS O-247 IXFH26N60P IXFV26N60P 26n60 26N60PS IXFT26N60P IXFV26N60PS PLUS220SMD ixfh26n60

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A Ω RDS on ≤ 270 mΩ ≤ 200 ns trr 26N60P 26N60P 26N60P 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS 26N60P 26N60P 26N60PS O-247 PLUS220SMD