Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N60P Search Results

    SF Impression Pixel

    2N60P Price and Stock

    Littelfuse Inc IXFP22N60P3

    MOSFET N-CH 600V 22A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFP22N60P3 Tube 301 1
    • 1 $3.81
    • 10 $3.81
    • 100 $2.5878
    • 1000 $2.53112
    • 10000 $2.53112
    		Buy Now

    Littelfuse Inc IXTQ22N60P

    MOSFET N-CH 600V 22A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTQ22N60P Tube 110 1
    • 1 $3.69
    • 10 $3.69
    • 100 $2.92233
    • 1000 $2.45
    • 10000 $2.45
    		Buy Now

    Littelfuse Inc IXFB82N60P

    MOSFET N-CH 600V 82A PLUS264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFB82N60P Tube 45 1
    • 1 $30.3
    • 10 $30.3
    • 100 $23.5495
    • 1000 $23.5495
    • 10000 $23.5495
    		Buy Now

    Littelfuse Inc IXFL82N60P

    MOSFET N-CH 600V 55A ISOPLUS264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFL82N60P Tube 25 1
    • 1 $23.18
    • 10 $23.18
    • 100 $21.1424
    • 1000 $21.1424
    • 10000 $21.1424
    		Buy Now

    IXYS Corporation IXTY2N60P

    MOSFET N-CH 600V 2A TO252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTY2N60P Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Find more 2N60P price and stock on Findchips.com

    2N60P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n60p

    Abstract: DS99422E
    Text: PolarHVTM Power MOSFET IXTP 2N60P IXTY 2N60P VDSS ID25 RDS on = 500 = 2 ≤ 5.1 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ VGSS VGSM Continuous Transient


    Original     		PDF 2N60P O-220 2n60p DS99422E

    2N60P

    Abstract: IXTP2N60P
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTP 2N60P IXTY 2N60P VDSS ID25 = 500 = 2 = 4.7 RDS on V A Ω N-Channel Enhancement Mode Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 600 V 600


    Original     		PDF 2N60P 2N60P O-220 O-252 405B2 IXTP2N60P

    IXTP2N60P

    Abstract: 2n60p IXTY2N60P IXTP IXTP IXTP IXTP 237 521 02
    Text: 2N60P 2N60P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 600V = 2A ≤ 5.1Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTY2N60P IXTP2N60P O-252 2N60P IXTP2N60P IXTY2N60P IXTP IXTP IXTP IXTP 237 521 02

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


    Original     		PDF IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET VDSS ID25 2N60P 2N60P RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 600V = 2A ≤ 5.1Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTY2N60P IXTP2N60P O-252 2N60P

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    2N60F

    Abstract: No abstract text available
    Text: 2N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 2 AMPERES DRAIN SOURCE VOLTAGE 600 VOLTAGE Description: This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the


    Original     		PDF O-251) O-252) O-251 O-252 O-252 12-Apr-2011 2N60F