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    48N60 Search Results

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    48N60 Price and Stock

    IXYS Corporation IXGA48N60A3-TRL

    IXGA48N60A3 TRL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGA48N60A3-TRL Reel 3,200 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.8789
    • 10000 $2.32112
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    IXGA48N60A3-TRL Cut Tape 145 1
    • 1 $4.77
    • 10 $4.003
    • 100 $3.2388
    • 1000 $3.2388
    • 10000 $3.2388
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    Mouser Electronics IXGA48N60A3-TRL 643
    • 1 $4.77
    • 10 $4.01
    • 100 $3.24
    • 1000 $2.33
    • 10000 $2.33
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    TTI IXGA48N60A3-TRL Reel 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.51
    • 10000 $2.32
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    IXYS Corporation IXGH48N60A3

    IGBT 600V 120A 300W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH48N60A3 Tube 1,150 1
    • 1 $4.87
    • 10 $4.87
    • 100 $3.89067
    • 1000 $3.605
    • 10000 $3.605
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    Mouser Electronics IXGH48N60A3 540
    • 1 $4.87
    • 10 $4.87
    • 100 $3.9
    • 1000 $3.6
    • 10000 $3.6
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    TTI IXGH48N60A3 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.61
    • 10000 $3.61
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    TME IXGH48N60A3 1
    • 1 $6.25
    • 10 $4.96
    • 100 $4.46
    • 1000 $4.46
    • 10000 $4.46
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    IXYS Corporation IXGR48N60C3D1

    IGBT PT 600V 56A ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGR48N60C3D1 Tube 386 1
    • 1 $16.33
    • 10 $16.33
    • 100 $13.22333
    • 1000 $11.27884
    • 10000 $11.27884
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    Mouser Electronics IXGR48N60C3D1 433
    • 1 $16.33
    • 10 $14.38
    • 100 $13.22
    • 1000 $11.27
    • 10000 $11.27
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    STMicroelectronics STW48N60DM2

    MOSFET N-CH 600V 40A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STW48N60DM2 Tube 345 1
    • 1 $7.93
    • 10 $7.93
    • 100 $6.33267
    • 1000 $4.99949
    • 10000 $4.21624
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    Avnet Americas STW48N60DM2 Tube 16 Weeks 600
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.9005
    • 10000 $4.4055
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    Mouser Electronics STW48N60DM2 836
    • 1 $7.93
    • 10 $6.79
    • 100 $5.66
    • 1000 $4.41
    • 10000 $4.21
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    TME STW48N60DM2 1
    • 1 $8.72
    • 10 $7.84
    • 100 $6.23
    • 1000 $5.62
    • 10000 $5.62
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    IXYS Corporation IXGH48N60C3D1

    IGBT PT 600V 75A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH48N60C3D1 Tube 300 1
    • 1 $9.79
    • 10 $9.79
    • 100 $7.815
    • 1000 $6.16969
    • 10000 $5.55272
    		Buy Now
    Mouser Electronics IXGH48N60C3D1 1,105
    • 1 $9.84
    • 10 $9.79
    • 100 $7.82
    • 1000 $7.03
    • 10000 $7.03
    		Buy Now
    TTI IXGH48N60C3D1 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $7.06
    • 10000 $7.06
    		Buy Now
    TME IXGH48N60C3D1 1 1
    • 1 $8.65
    • 10 $6.88
    • 100 $6.18
    • 1000 $6.18
    • 10000 $6.18
    		Buy Now
    Find more 48N60 price and stock on Findchips.com

    48N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    48N60

    Abstract: sot 227b FS 8860 48N60P
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 48N60P VDSS = 600 V ID25 = 40 A Ω RDS on ≤ 140 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 48N60P 48N60 sot 227b FS 8860 48N60P

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET VDSS ID2 IXFK 48N60P IXFX 48N60P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 48N60P O-264

    48N60

    Abstract: ISOPLUS247 IXFR48N60P A160M
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 48N60P VDSS ID25 RDS on trr ISOPLUS247TM N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode = 600 V = 32 A ≤ 160 mΩ Ω ≤ 250 ns (Electrically Isolated Back Surface) Symbol


    Original     		PDF 48N60P ISOPLUS247TM 48N60 ISOPLUS247 IXFR48N60P A160M

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 48N60P VDSS = 600 V ID25 = 40 A Ω RDS on ≤ 140 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 48N60P

    48N60

    Abstract: IXFK 48n60p 48N60P PLUS247
    Text: PolarHVTM HiPerFET Power MOSFET IXFK 48N60P IXFX 48N60P VDSS ID2 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Continuous


    Original     		PDF 48N60P O-264 O-264) 48N60 IXFK 48n60p 48N60P PLUS247

    48N60

    Abstract: 48N60P PLUS247
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 48N60P IXFX 48N60P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 48N60P O-264 48N60 48N60P PLUS247

    48N60

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 48N60P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 600 V = 48 A ≤ 135 mΩ Ω ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		PDF 48N60P OT-227 E153432 48N60

    IXFR48N60P

    Abstract: FS 8860 48n60 ISOPLUS247
    Text: PolarHVTM HiPerFET Power MOSFET IXFR 48N60P VDSS ID25 RDS on trr ISOPLUS247TM (Electrically Isolated Back Surface) = 600 V = 32 A ≤ 150 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		PDF 48N60P ISOPLUS247TM IXFR48N60P FS 8860 48n60 ISOPLUS247

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFR 48N60P VDSS ID25 RDS on trr ISOPLUS247TM (Electrically Isolated Back Surface) = 600 V = 32 A Ω ≤ 150 mΩ ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		PDF 48N60P ISOPLUS247TM

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information 48N60B3 48N60B3D1 GenX3TM 600V IGBTs Electrically Isolated Back Surface VCES = IC25 = VCE(sat) ≤ tfi(typ) = 600V 60A 2.1V 116ns Medium-Speed Low-Vsat PT IGBTs 5-40 kHz Switching IXGR_B3 Symbol Test Conditions IXGR_B3D1


    Original     		PDF IXGR48N60B3 IXGR48N60B3D1 116ns ISOPLUS247TM E153432 IC110 IF110 48N60B3D1) 338B2

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


    Original     		PDF IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P

    IXGR48N60B3

    Abstract: 48N60B3D1 ixgr48n60 48N60B3
    Text: Preliminary Technical Information 48N60B3 48N60B3D1 GenX3TM 600V IGBTs Electrically Isolated Back Surface VCES = IC25 = VCE(sat) ≤ tfi(typ) = 600V 60A 2.1V 116ns Medium-Speed Low-Vsat PT IGBTs 5-40 kHz Switching IXGR_B3 IXGR_B3D1 Symbol Test Conditions


    Original     		PDF IXGR48N60B3 IXGR48N60B3D1 116ns ISOPLUS247TM E153432 IC110 IF110 48N60B3D1) 338B2 48N60B3D1 ixgr48n60 48N60B3

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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