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    PLUS220 Price and Stock

    IXYS Corporation DPG30P300PJ

    Diodes - General Purpose, Power, Switching HiPerFRED
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    IXYS Corporation DPG10P400PJ

    Diodes - General Purpose, Power, Switching HiPerFRED
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    TTI DPG10P400PJ Tube 50
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    IXYS Corporation DPG30P400PJ

    Diodes - General Purpose, Power, Switching 30A 2X 400V ISOPLUS220
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    TTI DPG30P400PJ Tube 50
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    IXYS Corporation IXKC20N60C

    MOSFET 14 Amps 600V 0.19 Rds
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    TTI IXKC20N60C Box 50
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    IXYS Corporation DSEE15-12CC

    Rectifiers 15 Amps 1200V 2.05 Rds
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    TTI DSEE15-12CC Tube 50
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    PLUS220 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFETs VDSS ID25 IXFH12N100P IXFV12N100P IXFV12N100PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 12N100P 1-08-A

    IXFV110N25T

    Abstract: IXFV110N25TS PLUS220SMD
    Text: Preliminary Technical Information IXFV110N25T IXFV110N25TS Trench Gate Power HiperFET VDSS ID25 = 250V = 110A Ω ≤ 24mΩ RDS on N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250


    Original     		PDF IXFV110N25T IXFV110N25TS PLUS220 110N25T 8-11-08-A IXFV110N25T IXFV110N25TS PLUS220SMD

    200N10T

    Abstract: N mosfet 100v 200A IXTV200N10TS PLUS220SMD
    Text: IXTV200N10T IXTV200N10TS TrenchMVTM Power MOSFET VDSS ID25 = 100V = 200A Ω ≤ 5.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 175°C 100 V VDGR T J = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXTV200N10T IXTV200N10TS PLUS220 PLUS220SMD 200N10T 9-30-08-D N mosfet 100v 200A IXTV200N10TS PLUS220SMD

    Untitled

    Abstract: No abstract text available
    Text: TrenchTM HiPerFETTM Power MOSFETs VDSS ID25 IXFV110N25T IXFV110N25TS RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 250V = 110A ≤ 24mΩ Ω PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250


    Original     		PDF IXFV110N25T IXFV110N25TS PLUS220 PLUS220SMD. 110N25T 5-14-12-B

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFETs HiPerFETTM IXFV52N30P IXFV52N30PS IXFH52N30P VDSS ID25 = =   RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A  73m 200ns PLUS220 (IXFV) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXFV52N30P IXFV52N30PS IXFH52N30P 200ns PLUS220 IXFH52N30P 52N30P

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH15N100P IXFV15N100P IXFV15N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 15A Ω 760mΩ 300ns PLUS220 (IXFV) G D S Symbol Test Conditions


    Original     		PDF IXFH15N100P IXFV15N100P IXFV15N100PS 300ns PLUS220 15N100P

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFV22N50P IXFV22N50PS IXFH22N50P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 500V 22A Ω 270mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFV22N50P IXFV22N50PS IXFH22N50P 200ns PLUS220 100ms IXFV22N50PS 22N50P

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFH12N120P IXFV12N120P IXFV12N120PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 12A Ω 1.35Ω 300ns PLUS220 (IXFV) G D Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF IXFH12N120P IXFV12N120P IXFV12N120PS 300ns PLUS220 12N120P 4-01-08-A

    IXFH12N90P

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFH12N90P IXFV12N90P IXFV12N90PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 900V 12A Ω 900mΩ 300ns PLUS220 (IXFV) G Symbol Test Conditions


    Original     		PDF IXFH12N90P IXFV12N90P IXFV12N90PS 300ns PLUS220 12N90P IXFH12N90P

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFETs VDSS ID25 IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS220 IXTV RDS(on) trr(typ) G S D (TAB) 500V 22A Ω 270mΩ 400ns TO-3P (IXTQ) PLUS220SMD (IXTV_S) G D S = = ≤


    Original     		PDF IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P PLUS220 400ns PLUS220SMD O-247 100ms IXTV22N50P

    ixfh12n90p

    Abstract: PLUS220SMD
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH12N90P IXFV12N90P IXFV12N90PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 900V 12A Ω 900mΩ 300ns PLUS220 (IXFV) G Symbol Test Conditions


    Original     		PDF IXFH12N90P IXFV12N90P IXFV12N90PS 300ns PLUS220 12N90P ixfh12n90p PLUS220SMD

    52N30P

    Abstract: IXFH52N30P IXFV52N30P IXFV52N30PS PLUS220SMD 52N30
    Text: IXFV52N30P IXFV52N30PS IXFH52N30P PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A Ω 66mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFV52N30P IXFV52N30PS IXFH52N30P 200ns PLUS220 100ms 52N30P 3-14-06-C IXFH52N30P IXFV52N30P IXFV52N30PS PLUS220SMD 52N30

    IXFH36N50P

    Abstract: IXFT36N50P
    Text: IXFV36N50PS IXFV36N50P IXFH36N50P IXFT36N50P PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = = ≤ ≤ RDS on trr 500V 36A Ω 170mΩ 200ns PLUS220SMD (IXFV.S) G S D (Tab) PLUS220 (IXFV) Symbol


    Original     		PDF IXFV36N50PS IXFV36N50P IXFH36N50P IXFT36N50P 200ns PLUS220SMD PLUS220 O-268 IXFT36N50P

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS = 600 V ID25 = 30 A RDS on ≤ 240 m Ω ≤ 200 ns trr IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings


    Original     		PDF 30N60P 30N60PS PLUS220 30N60P O-247

    IXTQ22N50P

    Abstract: IXTH22N50P IXTV22N50P IXTV22N50PS ixtq-22n50p 22N50 PLUS220SMD IXTH 22N50P
    Text: IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS220 IXTV VDSS ID25 RDS(on) trr(typ) G D (TAB) S 500V 22A Ω 270mΩ 400ns TO-3P (IXTQ) PLUS220SMD (IXTV_S) G D S = = ≤


    Original     		PDF IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P PLUS220 400ns PLUS220SMD O-247 100ms IXTV22N50P IXTQ22N50P IXTH22N50P IXTV22N50PS ixtq-22n50p 22N50 PLUS220SMD IXTH 22N50P

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH12N120P IXFV12N120P IXFV12N120PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 12A Ω 1.35Ω 300ns PLUS220 (IXFV) G D Symbol Test Conditions


    Original     		PDF IXFH12N120P IXFV12N120P IXFV12N120PS 300ns PLUS220 12N120P

    10N100P

    Abstract: IXFH10N100P IXFV10N100P N CHANNEL MOSFET 10A 1000V PLUS220SMD
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH10N100P IXFV10N100P IXFV10N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 10A Ω 1.4Ω 300ns PLUS220 (IXFV) Symbol Test Conditions


    Original     		PDF IXFH10N100P IXFV10N100P IXFV10N100PS 300ns PLUS220 10N100P 10N100P IXFH10N100P IXFV10N100P N CHANNEL MOSFET 10A 1000V PLUS220SMD

    IXFH12N120P

    Abstract: 12N120P iXfh12n120 PLUS220SMD
    Text: PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH12N120P IXFV12N120P IXFV12N120PS VDSS ID25 RDS on trr = = ≤ ≤ 1200V 12A Ω 1.35Ω 300ns PLUS220 (IXFV) G D Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF IXFH12N120P IXFV12N120P IXFV12N120PS 300ns PLUS220 12N120P 4-01-08-A IXFH12N120P iXfh12n120 PLUS220SMD

    18n90

    Abstract: ixfh18n90 B1 9A IXFV18N90P IXFH18N90P IXFV18N90PS PLUS220SMD
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH18N90P IXFV18N90P IXFV18N90PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 900V 18A Ω 600mΩ 300ns PLUS220 (IXFV) Symbol Test Conditions


    Original     		PDF IXFH18N90P IXFV18N90P IXFV18N90PS 300ns PLUS220 18N90P 18n90 ixfh18n90 B1 9A IXFV18N90P IXFH18N90P IXFV18N90PS PLUS220SMD

    200N1

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTV200N10T IXTV200N10TS = 100 V = 200 A ≤ 5.5 m Ω RDS on N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXTV) G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C


    Original     		PDF IXTV200N10T IXTV200N10TS PLUS220 PLUS220SMD 200N10T 11-03-06-B 200N1

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information TrenchT2TM Power MOSFET IXTV270N055T2 IXTV270N055T2S VDSS ID25 = 55V = 270A Ω ≤ 3.0mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier PLUS220 (IXTV) G Symbol Test Conditions VDSS TJ = 25°C to 175°C


    Original     		PDF IXTV270N055T2 IXTV270N055T2S PLUS220 270N055T2 3-10-A

    Untitled

    Abstract: No abstract text available
    Text: TrenchMVTM Power MOSFET VDSS ID25 IXTV200N10T IXTV200N10TS = 100V = 200A Ω ≤ 5.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 175°C 100 V VDGR T J = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXTV200N10T IXTV200N10TS PLUS220 200N10T 9-30-08-D

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 IXFV74N20P IXFV74N20PS IXFH74N20P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 200V 74A Ω 34mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXFV74N20P IXFV74N20PS IXFH74N20P 200ns PLUS220 74N20P 6-15-05-D IXFH74N20P

    IXFH74N20P

    Abstract: IXFV74N20P IXFV74N20PS PLUS220SMD 74a diode
    Text: IXFV74N20P IXFV74N20PS IXFH74N20P PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 74A Ω 34mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C


    Original     		PDF IXFV74N20P IXFV74N20PS IXFH74N20P 200ns PLUS220 74N20P 6-15-05-D IXFH74N20P IXFV74N20P IXFV74N20PS PLUS220SMD 74a diode