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    100N Search Results

    100N Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    8T49N222B-100NLGI8 Renesas Electronics Corporation FemtoClock NG Universal Frequency Translator Visit Renesas Electronics Corporation
    NP100N04MUH Renesas Electronics Corporation Switching N-channel Power MOSFET Visit Renesas Electronics Corporation
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    100N Price and Stock

    Cal-Chip Electronics GMC10CG180F100NT

    CAP0603 COG 18PF 1% 100V
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    DigiKey GMC10CG180F100NT Cut Tape 11,000 1
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    Cal-Chip Electronics GMC04CG121J100NT

    CAP0402 COG 120PF 5% 100V
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    Diotec Semiconductor AG DI100N04PQ-AQ

    MOSFET PWRQFN 5X6 40V 0.0021OHM
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    DigiKey DI100N04PQ-AQ Digi-Reel 5,000 1
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    TME DI100N04PQ-AQ 1
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    Cal-Chip Electronics GMC10CG270F100NT

    CAP0603 COG 27PF 1% 100V
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    STMicroelectronics STB100N6F7

    MOSFET N-CH 60V 100A D2PAK
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    STMicroelectronics STB100N6F7 430 1
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    ComSIT USA STB100N6F7 1,900
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    100N Datasheets (61)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    100N3LF3 STMicroelectronics N-channel 30V - 0.0045OHM - 80A - DPAK - IPAK Planar STripFET TM II Power MOSFET Original PDF
    100N50TW Anaren RF/IF and RFID - Attenuators - RF ATTENUATOR 50OHM Original PDF
    100-N/7 Dremel Tools - Specialized Tools - 100 SERIES RT, SINGLE SPEED, 7 A Original PDF
    100NA100MEFC12.5X25 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 100UF 100V 20% RADIAL Original PDF
    100NA10MEFC8X11.5 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 10UF 100V 20% RADIAL Original PDF
    100NA1MEFC5X11 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM RAD Original PDF
    100NA22MEFC10X12.5 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 22UF 100V 20% RADIAL Original PDF
    100NA2.2MEFC5X11 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 2.2UF 100V 20% RADIAL Original PDF
    100NA4.7MEFC6.3X11 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM RAD Original PDF
    100NF-LAVENDER-100G 3M Tapes, Adhesives, Materials - Glue, Adhesives, Applicators - FASTBOND FOAM ADHESIVE 100NF Original PDF
    100NF-LAVENDER-270G 3M Tapes, Adhesives, Materials - Glue, Adhesives, Applicators - FASTBOND FOAM ADHESIVE 100NF Original PDF
    100NF-LAVENDER-52G-METALDRUM 3M Tapes, Adhesives, Materials - Glue, Adhesives, Applicators - FASTBOND FOAM ADHESIVE 100NF Original PDF
    100NF-LAVENDER-52G-POLYDRUM 3M Tapes, Adhesives, Materials - Glue, Adhesives, Applicators - FASTBOND FOAM ADHESIVE 100NF Original PDF
    100NF-LAVENDER-5G-BOX 3M Tapes, Adhesives, Materials - Glue, Adhesives, Applicators - FASTBOND FOAM ADHESIVE 100NF Original PDF
    100NF-LAVENDER-5G-PAIL 3M Tapes, Adhesives, Materials - Glue, Adhesives, Applicators - FASTBOND FOAM ADHESIVE 100NF Original PDF
    100NF-NEUTRAL-52G-METALDRUM 3M Tapes, Adhesives, Materials - Glue, Adhesives, Applicators - FASTBOND FOAM ADHESIVE 100NF Original PDF
    100NF-NEUTRAL-52G-POLYDRUM 3M Tapes, Adhesives, Materials - Glue, Adhesives, Applicators - FASTBOND FOAM ADHESIVE 100NF Original PDF
    100NF-NEUTRAL-5G-BOX 3M Tapes, Adhesives, Materials - Glue, Adhesives, Applicators - FASTBOND FOAM ADHESIVE 100NF Original PDF
    100NF-NEUTRAL-5G-PAIL 3M Tapes, Adhesives, Materials - Glue, Adhesives, Applicators - FASTBOND FOAM ADHESIVE 100NF Original PDF
    100NH00M Eaton Circuit Protection - Electrical, Specialty Fuses - FUSE SQ 100A 500VAC RECTANGULAR Original PDF

    100N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    12nh1

    Abstract: LL1005-FHL1N5S LL1005-FHL3N3S 18nH10 4105N LL1005-FHL2N0S
    Text: Multilayer Chip Inductors 叠层片式电感器 LL1005-FHL Inductance Range: 1.0~100nH E-24 Series 特殊对应品 order production available (1.1nH, 1.3nH, 1.6nH, 2.0nH, 2.4nH, 3.0nH, 3.6nH, 4.3nH, 5.1nH, 6.2nH, 7.5nH, 9.1nH) Temperature Coefficient of L: + 250ppm/°C (for reference only)


    Original
    LL1005-FHL 100nH 250ppm/ 100nH 10GHz LL1005-FHL82NJ LL1005-FHLR10J. LL1005-FHL82NJLL1005-FHLR10J 291A/B 6192A 12nh1 LL1005-FHL1N5S LL1005-FHL3N3S 18nH10 4105N LL1005-FHL2N0S PDF

    Untitled

    Abstract: No abstract text available
    Text: 1GU42 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 1GU42 Unit: mm HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY z Average Forward Current : IF (AV) = 1.0A z Repetitive Peak Reverse Voltage : VRRM = 400V z Reverse Recovery Time : trr = 100ns (Max) z Plastic Mold Type.


    Original
    1GU42 100ns PDF

    8X13

    Abstract: No abstract text available
    Text: tm TE CH Preliminary T15S256A CMOS STATIC RAM SRAM 32K X 8 LOW POWER FEATURES GENERAL DESCRIPTION ¡EHigh speed access time: 50/70/85/100ns The T15S256A is a low power and low voltage CMOS static RAM. organized as 32,768 x 8 bits that operates on a 1.2V to 1.8V power supply. Data


    Original
    T15S256A 50/70/85/100ns T15S256A 28-pin 8X13 PDF

    HCF4018be

    Abstract: hfc4018 HCF4011 4018B HCC/HFC4018B HCC4018B HCC4018BF HCF4018B HCF4018BC1 HCF4018BEY
    Text: HCC/HCF4018B PRESETTABLE DIVIDE-BY-N COUNTER . . . . . . MEDIUM SPEED OPERATION - 10MHz typ. AT VDD – VSS = 10V FULLY STATIC OPERATION QUIESCENT CURRENT SPECIFIED TO 20V FOR HCC DEVICE STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS INPUT CURRENT OF 100nA AT 18V AND 25°C


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    HCC/HCF4018B 10MHz 100nA HCC4018BF HCF4018BM1 HCF4018BEY HCF4018BC1 HCC4018B HCF4018be hfc4018 HCF4011 4018B HCC/HFC4018B HCC4018B HCC4018BF HCF4018B HCF4018BC1 HCF4018BEY PDF

    14Q7

    Abstract: No abstract text available
    Text: K3P4C1000D-D G C CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access


    Original
    K3P4C1000D-D /512Kx16) 100ns K3P4C1000D-DC 42-DIP-600 K3P4C1000D-GC 44-SOP-600 K3P4C1000DD 14Q7 PDF

    100N25

    Abstract: ID104
    Text: HiPerFETTM Power MOSFETs IXFX 100N25 IXFK 100N25 VDSS ID25 RDS on Single MOSFET Die = 250 V = 100 A Ω = 27 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM


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    100N25 ID104 247TM capa26 100N25 ID104 PDF

    Untitled

    Abstract: No abstract text available
    Text: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current


    Original
    HCC4000B 100nA 0-15V 100kRad 11rad/sec 72MeV/cm HCC4516BK HCC4516 HCC4516BK1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current


    Original
    HCC4000B 100nA 0-15V 100kRad 11rad/sec 72MeV/cm HCC4093BK HCC4093 HCC4093BK1 PDF

    PDM31096

    Abstract: PDM31096LL
    Text: PDM31096LL PRELIMINARY 512K x 8-Bit Low Power 3.3 Volt Description Features n High-speed access times Com’l: 70, 85 and 100ns n Low power operation typical - PDM31096LL Active: 65 mW Standby: 10µW The PDM31096LL is a very low power CMOS static RAM organized as 524,288 x 8 bits. Writing to this


    Original
    PDM31096LL PDM31096LL 100ns 32-pin PDM31096 512Kx8) PDF

    Untitled

    Abstract: No abstract text available
    Text: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current


    Original
    HCC4000B 100nA 0-15V 100kRad 11rad/sec 72MeV/cm HCC4013BK HCC4013 HCC4013BK1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current


    Original
    HCC4000B 100nA 0-15V 100kRad 11rad/sec 72MeV/cm HCC4053BK HCC4053 HCC4053BK1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current


    Original
    HCC4000B 100nA 0-15V 100kRad 11rad/sec 72MeV/cm marki007 HCC4023BK HCC4023 PDF

    Untitled

    Abstract: No abstract text available
    Text: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current


    Original
    HCC4000B 100nA 0-15V 100kRad 11rad/sec 72MeV/cm HCC4060BK HCC4060 HCC4060BK1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current


    Original
    HCC4000B 100nA 0-15V 100kRad 11rad/sec 72MeV/cm marki007 HCC4067BK HCC4067 PDF

    Untitled

    Abstract: No abstract text available
    Text: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current


    Original
    HCC4000B 100nA 0-15V 100kRad 11rad/sec 72MeV/cm HCC4052BK HCC4052 HCC4052BK1 PDF

    1r5nu41

    Abstract: No abstract text available
    Text: SILICON D IFFUSED T Y P E S U P E R FA ST R E C O V E R Y RECTIFIER 1R5NU41 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS. . Repetitive Peak Reverse Voltage : V r r >i=1C00V . Average Forward Current : Ip AV =1.5A . Very Fast Reverse-Recovery Time : trr=100ns


    OCR Scan
    1R5NU41 1C00V 100ns 1r5nu41 PDF

    2N4403

    Abstract: No abstract text available
    Text: TOSHIBA 2N4403 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -100nA Max. , IBEV = 100nA (Max.) @ VCE = -35V, VBE = 0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage


    OCR Scan
    2N4403 -100nA 100nA -150mA, -15mA 2N4401 X10-4 2N4403 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON DIFFUSED TYPE RECTIFIER 1JU42 HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY . Average Forward Current : If (AV)=1.0A . Repetitive Peak Reverse Voltage : V r r h =600V . Reverse Recovery Tine : trr=100ns(Max.) . Plastic Mold Type. MAXIMUM RATINGS


    OCR Scan
    1JU42 100ns -30A/fis PDF

    28F512A

    Abstract: 28F512A-12
    Text: SMJS514C-FEBRUARY 1 Organization. . . 65536 by 8 Bits All Inputs/Outputs TTL-Compatible TMS28F512A 65536 BY 8-BIT FLASH MEMORY m - REVISED AUGUST 1997 FM PACKAGE TOP VIEW Vgc Tolerance ±10% Maximum Access/Minimum Cycle Time '28F512A-10 100ns28F512A-12


    OCR Scan
    SMJS514C-FEBRUARY TMS28F512A 28F512A-10 100ns 28F512A-12 120ns 28F512A-15 150ns 28F512A-17 170ns 28F512A PDF

    YTS4400

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE YTS4400 U n i t in m m FOR G E N E R A L P U R POSE USE S W I T C H I N G A N D A M P L I F I E R * 0. 5 8 . 5 - 0. 3 APPLICATIONS. + 0.25 , 1 -5 - 0 1 5 FEATURES: EE • Low Leakage Current : I c E V = 1 0 0 tlJ' M a x - > lEj;y=-100nA (Max. )


    OCR Scan
    YTS4400 -100nA 150mA 500mA 150mA, 500mA, 100MHz YTS4400 PDF

    SRM20100LRM70

    Abstract: No abstract text available
    Text: SRM20100l_7o/85/io CMOS 1M-BIT STATIC RAM • Low Supply Current • Access Time 70ns/85ns/100ns • 131,072 Words x 8-Bit Asynchronous DESCRIPTION The SRM201 OOI_7o/85/ic is a 131,072 words x 8-bit asynchronous, static, random access memory on a monolithic


    OCR Scan
    SRM20100l_ 70ns/85ns/100ns SRM201 7o/85/ic SRM20100L SRM20100L85. SRM20100Lio. SRM20100L70/85/10 SRM201OOL70/85/1 OP6-32pin SRM20100LRM70 PDF

    YTS4401

    Abstract: MARKING e1v
    Text: SILICON NPN EPITAXIAL TYPE YTS4401 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES : • Low Leakage Current : Ic]jv=100nA Max. , Iggy=-100nA (Max.) @ VCE=35V, V b e =-0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage


    OCR Scan
    YTS4401 100nA -100nA 150mA, YTS4403 500mA, f-100MHz YTS4401 MARKING e1v PDF

    marking SL Y8

    Abstract: No abstract text available
    Text: TYPE 46 MuttHayer Chip Inductors LL1608-FH s ’# Series 9 *? TYPE LL1608-FH Series Inductance Range: 1.2~100nH E-12 Temperature Coefficient of L: +250ppm/°C, typical Marking of polarity Marking : Blue Green •dimensions / m m m Length (mm) Width (mm)


    OCR Scan
    LL1608-FH LL1608-FH 100nH 250ppm/ 114IK/F 100nH) 3--100nH) 000mA marking SL Y8 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON DIFFUSED TYPE SUPER FAST RECOVERY RECTIFIER U05NU44 SWITCHING TYPE POWER SUPPLY APPLICATIONS. Unit in mm . Repetivier Peak Reverse Voltage : Vrrji=1000V . Average Forward Current p : If a V =0.5A . Very Fast Reverse-Recovery Time : trr=100ns(Max.)


    OCR Scan
    U05NU44 100ns 50Ilz) PDF