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    IXYS CROSS Search Results

    IXYS CROSS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MP-5XRJ11PPXS-014 Amphenol Cables on Demand Amphenol MP-5XRJ11PPXS-014 Flat Silver Satin Modular Crossed wiring Cable, RJ11 / RJ11 14ft Datasheet
    8V54816ANLG8 Renesas Electronics Corporation 16-Port, Bi-directional M-LVDS Clock Cross-Point Switch Visit Renesas Electronics Corporation
    8V54816ANLG Renesas Electronics Corporation 16-Port, Bi-directional M-LVDS Clock Cross-Point Switch Visit Renesas Electronics Corporation
    10150535-050HLF Amphenol Communications Solutions Cross-Mate™, Wire to Board connectors 2.0mm Pitch, Cable Connector Visit Amphenol Communications Solutions
    iW1820-33 Renesas Electronics Corporation 15W AccuSwitch™ AC/DC Digital Primary-Side Switcher Eliminates Optocoupler and Maintains Excellent Cross-Regulation Accuracy Visit Renesas Electronics Corporation

    IXYS CROSS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LBA716

    Abstract: IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division In April, 2012, Clare, Inc., officially became IXYS Integrated Circuits Division. IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division


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    N1016, CH-2555 LBA716 IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219 PDF

    mosfet 1200V 40A

    Abstract: Silicon MOSFET 1000V mosfet 1500v igbt testing pnp 1000V 2A IGBT Transistor 1200V, 25A MOSFET 1200v 3a igbt 20A 1200v pnp 1200V 2A 40N160
    Text: IXBH40N160 BiMOSFETTM Developed for High Voltage, High Frequency Applications Ralph E. Locher IXYS Corporation Santa Clara, CA by Olaf Zschieschang IXYS Semiconductor GmbH Lampertheim, Germany ABSTRACT In the IXBH40N160, IXYS has developed an extremely fast, homogeneous base IGBT by the


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    IXBH40N160 IXBH40N160, 200ns. mosfet 1200V 40A Silicon MOSFET 1000V mosfet 1500v igbt testing pnp 1000V 2A IGBT Transistor 1200V, 25A MOSFET 1200v 3a igbt 20A 1200v pnp 1200V 2A 40N160 PDF

    IXAN0016

    Abstract: pnp transistor 1000v pnp 1200V 2A snubber CIRCUITS mosfet Silicon MOSFET 1000V mosfet 1000v MOSFET 1200v 3a mosfet 1500v 35N120A mosfet 1200V 40A
    Text: IXAN0016 IXBH40N160 BiMOSFETTM Developed for High Voltage, High Frequency Applications Ralph E. Locher IXYS Corporation Santa Clara, CA by Olaf Zschieschang IXYS Semiconductor GmbH Lampertheim, Germany ABSTRACT In the IXBH40N160, IXYS has developed an extremely fast, homogeneous base IGBT by the


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    IXAN0016 IXBH40N160 IXBH40N160, 200ns. IXAN0016 pnp transistor 1000v pnp 1200V 2A snubber CIRCUITS mosfet Silicon MOSFET 1000V mosfet 1000v MOSFET 1200v 3a mosfet 1500v 35N120A mosfet 1200V 40A PDF

    IXAN0065

    Abstract: IXTQ130N10T mosfet ixys
    Text: IXYS Power MOSFET Datasheet Parameters Definition Abdus Sattar, IXYS Corporation IXAN0065 IXYS provides datasheets with parameters that are essential and useful for selecting the appropriate device as well as for predetecting its performance in an application. The graphs included in the datasheet represent typical performance


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    IXAN0065 IXTH/IXTQ130N10T" IXAN0065 IXTQ130N10T mosfet ixys PDF

    xenon hid ballast

    Abstract: Xenon HID Block Diagram circuit diagram ballast xenon single phase inverters circuit diagram solar inverters circuit diagram HID lamp ballast HID igniter xenon ballast single phase inverter mosfet ballast diagram
    Text: POWER Efficiency Through Technology N E W P R O D U C T B R I E F ISOPLUS i4-PACTM Half-Bridge MOSFET Modules IXYS Introduces new isolated phase leg modules january 2010 OVERVIEW IXYS introduces new half-bridge MOSFET modules that are available in IXYS proprietary


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    E153432) com/IXAN0022 xenon hid ballast Xenon HID Block Diagram circuit diagram ballast xenon single phase inverters circuit diagram solar inverters circuit diagram HID lamp ballast HID igniter xenon ballast single phase inverter mosfet ballast diagram PDF

    IXYS’ Clare Introduces 2 New Gate Driver Families

    Abstract: IXDN602 IXDD614 IXDN614 IXDI614 IXDI602 IXDF602 an 614 AN
    Text: PRESS RELEASE Contact: Catherine Austin Clare, Inc. Ph: 978-524-6823 Fax: 978-524-4900 IXYS’ Clare Introduces 2 New Gate Driver Families IXD_602 and IXD_ 614 Gate Driver ICs are ideal for driving IXYS’ power MOSFETs and IGBTs Beverly, MA and Biel, Switzerland. September 14, 2010 - IXYS Corporation


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    IXYS Clare Introduces New Family of 4A Dual-Channel Gate Drivers

    Abstract: ixdi604 ixd 604 IXDN604 IXDD604 IXDF604 ixd_604 8pin dual gate driver
    Text: PRESS RELEASE Contact: Catherine Austin Clare, Inc. Ph: 978-524-6823 Fax: 978-524-4900 IXYS Clare Introduces New Family of 4A Dual-Channel Gate Drivers IXD_604 Gate Driver ICs are ideal for driving IXYS power MOSFETs and IGBTs Beverly, MA and Biel, Switzerland. July 6, 2010 - IXYS Corporation NASDAQ:IXYS


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    Inverter Welder

    Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter
    Text: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM


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    PB60IGBTA3B3C3 Inverter Welder inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter PDF

    IXAN0022

    Abstract: KU4-499 KU4-495 KU4-498 isoplus ixys cross KU4499 isoplus ixys mounting KU3-381 4490 mosfet
    Text: IXAN0022 Capitalizing on the Advantages of ISOPLUS Products Introduction IXYS Corporation offers unique power packages with internal isolation, and performance and reliability advantages. The IXYS isolated packages include ISOPLUS220TM, ISOPLUS247TM, ISOPLUS


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    IXAN0022 ISOPLUS220TM, ISOPLUS247TM, ISOPLUS264 ISOPLUS220, ISOLPUS247 advantKU4-498/X ISOPLUS220 KU4-498/X O-247 IXAN0022 KU4-499 KU4-495 KU4-498 isoplus ixys cross KU4499 isoplus ixys mounting KU3-381 4490 mosfet PDF

    DIN ISO 1302

    Abstract: ISO 1302 DC340
    Text: Mounting Instructions Montagehinweise The IXYS Semiconductor devices are thoroughly checked before leaving the factory. To avoid any damage during mounting, please note the following instructions. IXYS Leistungshalbleiter verlassen das Werk nach Prüfung in


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    DC340. DIN ISO 1302 ISO 1302 DC340 PDF

    IXAN0027

    Abstract: DIN iso 1302 ISO 1302 DC340 DIN ISO 965 DIN 1302
    Text: IXAN0027 Mounting Instructions Montagehinweise The IXYS Semiconductor devices are thoroughly checked before leaving the factory. To avoid any damage during mounting, please note the following instructions. IXYS Leistungshalbleiter verlassen das Werk nach Prüfung in


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    IXAN0027 DC340. IXAN0027 DIN iso 1302 ISO 1302 DC340 DIN ISO 965 DIN 1302 PDF

    IXAN0063

    Abstract: IGBT THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS schematic diagram UPS IGBT Mohan power electronics converters applications a transistor igbt BJT safe operating area IGBT PNP input output bjt npn transistor SCHEMATIC servo dc IGBTS
    Text: Insulated Gate Bipolar Transistor IGBT Basics Abdus Sattar, IXYS Corporation IXAN0063 1 This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs.


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    IXAN0063 2001Indonesia IXAN0063 IGBT THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS schematic diagram UPS IGBT Mohan power electronics converters applications a transistor igbt BJT safe operating area IGBT PNP input output bjt npn transistor SCHEMATIC servo dc IGBTS PDF

    IXFR170N10

    Abstract: SIL-PAD to-247 IXFX55N50 SIL-PAD PLUS247 26N50 ISOPLUS247 IXFR150N10 IXFR55N50 IXFX180N10
    Text: Technical Application The Revolution in Discrete Isolation Technique by Martin Arnold, Product Marketing, IXYS Semiconductor GmbH & Ralph Locher, Application Engineering, IXYS Corporation Introduction When using power semiconductors, there is usually the need to electrically isolate the devices from the heatsink, which


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    ISOPLUS247 IXFR55N50 IXFX55N50 IXFX55N50 D-68623 IXFR170N10 SIL-PAD to-247 SIL-PAD PLUS247 26N50 IXFR150N10 IXFR55N50 IXFX180N10 PDF

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


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    IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P PDF

    IXYS CORPORATION

    Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
    Text: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS


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    DMA10P1600PZ /1600V) CMA50E1600TZ DSP45-16TZ O-263 D-68623 CH-2555 IXYS CORPORATION MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ PDF

    IXBK55N300

    Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250
    Text: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking


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    E153432) com/IXAN0022 IXBK55N300 IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250 PDF

    IXDD409CI

    Abstract: IXDD409PI IXDD409SI IXDD409YI smps LM339
    Text: IXDD409PI / 409SI / 409YI / 409CI IXDI409PI / 409SI / 409YI / 409CI IXDN409PI / 409SI / 409YI / 409CI 9 Ampere Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes.


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    IXDD409PI 409SI 409YI 409CI IXDI409PI IXDN409PI IXDD409CI IXDD409SI IXDD409YI smps LM339 PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


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    STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    IXDD409PI

    Abstract: IXDI409PI IXDN409PI IXDD409CI IXDD409SI IXDI409YI IXDN409CI IXDI409SI IXDI409CI IXDD409YI
    Text: IXDD409PI / 409SI / 409YI / 409CI IXDI409PI / 409SI / 409YI / 409CI IXDN409PI / 409SI / 409YI / 409CI 9 Ampere Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes.


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    IXDD409PI 409SI 409YI 409CI IXDI409PI 409CI IXDN409PI IXDD409CI IXDD409SI IXDI409YI IXDN409CI IXDI409SI IXDI409CI IXDD409YI PDF

    IXDD409PI

    Abstract: 409YI DD409 IXDD409 IXDI409PI IXDN409 IXDN409PI 409CI dn409 IXDN409SI
    Text: IXDD409PI / 409SI / 409YI / 409CI IXDI409PI / 409SI / 409YI / 409CI IXDN409PI / 409SI / 409YI / 409CI 9 Ampere Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes.


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    IXDD409PI 409SI 409YI 409CI IXDI409PI 409CI IXDN409PI DD409 IXDD409 IXDN409 dn409 IXDN409SI PDF

    calculation of IGBT snubber

    Abstract: DSEP ISOPLUS247 dt300
    Text: Fast, faster, fastest! Optimized diodes for switching applications by Udo Steinebrunner, IXYS Semiconductor GmbH, Lampertheim Abstract Great efforts have been made to improve power switches – MOSFETs and IGBTs – to decrease forward voltage drop and as


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    IXDD409

    Abstract: IXDD409PI IXDI409PI IXDN409 IXDN409PI DD409 IXDD409CI
    Text: IXDD409PI / 409SI / 409YI / 409CI IXDI409PI / 409SI / 409YI / 409CI IXDN409PI / 409SI / 409YI / 409CI 9 Ampere Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes.


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    IXDD409PI 409SI 409YI 409CI IXDI409PI 409CI IXDN409PI IXDD409 IXDN409 DD409 IXDD409CI PDF

    IXDD408CI

    Abstract: ixdd408pi Cd4011a
    Text: PRELIMINARY DATA SHEET IXDD408PI IXDD408YI IXDD408CI Ultrafast High Current MOSFET Driver Features Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch Up Protected • High Peak Output Current: 8A Peak


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    IXDD408PI IXDD408YI IXDD408CI 2500pF IXDD408 IXDD480 Edisonstrasse15 IXDD408CI Cd4011a PDF

    single phase inverter IGBT

    Abstract: Single Phase to Three Phase Converter 3 phase igbt INVERTER ac motor eupec FB15R06KL4 inverter igbt circuit diagrams single phase to 3 phase inverter AC FP10R12YT3 FP15R12YT3 FP10R12YT3 eupec IGBT cross reference
    Text: □ IXYS w Overview: IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond OCB module packaging technology, located in Lampertheim, Germany has extended its portfolio of IGBT


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    MIAA10WD600TMH FB10R06KL4G MIAA15WD600TMH MIAA20WD600TMH FB15R06KL4 FB20R06KL4 MIAA10WB600TMH FP10R06KL4 MIAA15WB600TMH FP15R06KL4 single phase inverter IGBT Single Phase to Three Phase Converter 3 phase igbt INVERTER ac motor eupec FB15R06KL4 inverter igbt circuit diagrams single phase to 3 phase inverter AC FP10R12YT3 FP15R12YT3 FP10R12YT3 eupec IGBT cross reference PDF