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    IXBF55N300 Price and Stock

    IXYS Corporation IXBF55N300

    DISC IGBT BIMSFT-VERYHIVOLT I4-P
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    DigiKey IXBF55N300 Tube 300
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    TTI IXBF55N300 Tube 300
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    IXBF55N300 Datasheets Context Search

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    IXBF55N300

    Abstract: transistor 537 b 360 isoplus ixys mounting
    Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF55N300 VCES = 3000V IC110 = 28A VCE sat ≤ 3.2V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C


    Original     		PDF IXBF55N300 IC110 55N300 0-22-09-A IXBF55N300 transistor 537 b 360 isoplus ixys mounting

    IXBF55N300

    Abstract: 55N300
    Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF55N300 VCES = 3000V IC110 = 28A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


    Original     		PDF IXBF55N300 IC110 55N300 0-22-09-A IXBF55N300

    IXBF55N300

    Abstract: No abstract text available
    Text: High Voltage, High Gain BIMOSFETTM IXBF55N300 VCES = 3000V IC110 = 34A VCE sat ≤ 3.2V Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 50/60Hz, IXBF55N300 IC110 100ms 55N300 11-03-11-C IXBF55N300

    Untitled

    Abstract: No abstract text available
    Text: High Voltage, High Gain BIMOSFETTM VCES = 3000V IC110 = 34A VCE sat ≤ 3.2V IXBF55N300 Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXBF55N300 100ms 55N300 11-03-11-C

    IXGF30N400

    Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
    Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers


    Original     		PDF O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250

    IXBK55N300

    Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250
    Text: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking


    Original     		PDF E153432) com/IXAN0022 IXBK55N300 IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250