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    BUX11N Search Results

    BUX11N Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BUX11N Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Original PDF
    BUX11N Crimson Semiconductor EPITAXIAL PLANAR / MULTIEPITAXIAL PLANAR Transistors Scan PDF
    BUX11N Iskra Power Silicon Transistors / Switching Transistors Scan PDF
    BUX11N Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUX11N Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BUX11N Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BUX11N Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BUX11N Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BUX11N Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BUX11N Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BUX11N Semelab Bi-Polar Transistors (CECC and High Rel) & High Energy Scan PDF
    BUX11N STMicroelectronics Shortform Data Book 1988 Short Form PDF
    BUX11N Thomson-CSF Condensed Data Book 1977 Scan PDF
    BUX11N Thomson-CSF Power Transistor Data Book 1975 Scan PDF

    BUX11N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BUX11N Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BUX11N O204AA) 18-Jun-02

    BUX11N

    Abstract: No abstract text available
    Text: BUX11N Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BUX11N O204AA) 31-Jul-02 BUX11N

    BUX11

    Abstract: No abstract text available
    Text: BUX11N Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BUX11N O204AA) 16-Jul-02 BUX11

    BDW16

    Abstract: SM3159 2N2753 str16 SM317 2U75 2N1826 BUV41
    Text: POWER SILICON NPN Item Number Part Number I C -5 10 15 20 30 35 40 45 50 -60 70 75 - 80 140 140 150 150 150 150 150 150 150 150 ~~6~~~~ ~e.!naex ~g ~~g 20 20 20 20 20 20 20 20 150 150 160 160 160 160 160 160 20 30 ~g ~~g 20 20 20 20 20 20 20 20 160 160 160


    Original     		PDF MJ15003 RCA8638C SML8753 SML8757 2N1825 2N2125 2N2741 2N2747 2N2753 2N2817 BDW16 SM3159 str16 SM317 2U75 2N1826 BUV41

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    2N5101

    Abstract: BUY46 BUW32 BUS13A BUV21 ISO BUZ171 equivalent BUY22 BUT51P BUX23 BUT13P
    Text: STI Type: 2N5050 Notes: Polarity: NPN Power Dissipation: 40 VCBO: 125 VCER: 125 ICBO: 125 ICBO ua: 500 hFE: 25 hFE A: 1.0 VCE: 1.0 VBE: 1.2 IC A: .75 COB: 250 fT: 10 Case Style: TO-213AA/TO-66 Industry Type: 2N5050 STI Type: 2N5052 Notes: *BVCEO Polarity: NPN


    Original     		PDF 2N5050 O-213AA/TO-66 2N5052 2N5055 O-206AA/TO-18: 2N5056 2N5101 BUY46 BUW32 BUS13A BUV21 ISO BUZ171 equivalent BUY22 BUT51P BUX23 BUT13P

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


    Original     		PDF 2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020

    bu2527af

    Abstract: wk16412 WK16413 WK16414 Tesla katalog VQE24 VQE14 4DR823B kr206 5DR801B
    Text: Pøehled diskrétních polovodièových souèástek TESLA a dalších dovážených typù z nìkdejší RVHP TRANZISTORY TYRISTORY • TRIAKY • DIAKY DIODY • LED • DISPLEJE OPTOÈLENY a další prvky … spolu s náhradami … a nejpoužívanìjší standardní


    Original     		PDF roku1984/85, VQB200 VQB201 VQC10 VQE11 VQE12 VQE13 VQE14 VQE21 VQE22 bu2527af wk16412 WK16413 WK16414 Tesla katalog VQE24 4DR823B kr206 5DR801B

    BUX11n

    Abstract: G-4041 BUX11
    Text: SGS-THOMSON MûœiLiOT «! BUX11N HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESCRIPTION The BUX11 is a silicon multiepitaxial NPN transis­ tor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and in­ dustrial equipment.


    OCR Scan     		PDF BUX11N BUX11 G-4047 G-4048 BUX11n G-4041

    U 1560

    Abstract: BUX24-RC BUX51
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUW58 BUW60 BUW61 BUW62 BUW73 BUW74 BUW75 BUW76 BUW77 BUW81 BUW81A BUW89 BUW90 BUW91 BUW92 BUX10 B U X 10C ECC BUX10P BUX11 BUX11 CE C C BUX11N BUX11P BUX12 B U X 12C EC C BUX12P BUX13 BUX13 CE C C


    OCR Scan     		PDF BUW58 BUW60 BUW61 BUW62 BUW73 BUW74 BUW75 BUW76 BUW77 BUW81 U 1560 BUX24-RC BUX51

    Untitled

    Abstract: No abstract text available
    Text: CRIMSON SE MICO ND UC TO R INC TT D eTJI e SIMD^ b 0DQ0337 4 • . 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 00 3 3 7 ! D ' ' f ' 3 3 - 0/ ! EPITAXIAL PLANAR - TO -66 NPN PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428


    OCR Scan     		PDF 0DQ0337 BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 N5427 2N5428

    Untitled

    Abstract: No abstract text available
    Text: 7 T 2 S237 QQ26^21 M • '3 3 » / 3 SGS-THOMSON B U X 1 1 N S G S-THOMSON 30E D HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESC RIPTIO N The BUX11 is a silicon multiepitaxial NPN transis­ tor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and in­


    OCR Scan     		PDF BUX11 7RST237 DGafi12M

    MH1SS1

    Abstract: MHB4011 MH5400S Katalog tesla diod C520D A244D MAC198 MA3006 KF520 B260D
    Text: Prehled diskrétních polovodicovÿch soucástek a dalsích dovâzenÿch typú z nèkdej si RVHP TRANZISTORY TYRISTORY • TRIAKY • DIAKY DIODY • LED • DISPLEJE OPTOCLENY a dalsí prvky . spolu s náhradami . a nej pouzívanéj sí standardní zahranicní soucástky


    OCR Scan     		PDF roku1984/85, MH1SS1 MHB4011 MH5400S Katalog tesla diod C520D A244D MAC198 MA3006 KF520 B260D

    mje520

    Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
    Text: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen­ hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50


    OCR Scan     		PDF BD433 MJE200 MJE520 BD435 2N4921 2IM5190 2IM6037 MJE521 MJE180 BD135 SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP

    JE350

    Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
    Text: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168


    OCR Scan     		PDF BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 JE350 je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Untitled

    Abstract: No abstract text available
    Text: EPITA XIA L PLANAR - TO-66 PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 21-14912 2N5427 2N5428 2N5429 2NI5430 BUX78 2N4898 2N4899 2N4900 lc Vco V V cio (V) (A) P« (W) 100 300 200 100 40 60 80 80 80 100 100 80 200 120 80 40 60 80 80 80 100 100 5 20 10 5 4 4


    OCR Scan     		PDF BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N5427 2N5428 2N5429 2NI5430

    ISKRA

    Abstract: TIP 2n3055 iskra by 325 BU208A BDX20 TIP NPN BU134 bdx18 me BDY56 2N3055
    Text: ISKRA ELECTRONICS INC SSE D • M8Í3M77 DODDUM 1 ■ - T - 93 -/5 " T - i 3 -¡3 Silicijevi mocnostni transistorji Power silicon transistors Tip/Type Polariteta Polarity Mcbo • Uceo l9op , ^tot hpE prl/at fT UcEsat A (MHz) (V) 15-120 2 10 0,6 *c . <V)


    OCR Scan     		PDF BDY24 BDY25 BDY74 2N3442 2N4348 2N3055 BDY56 2N3773 2N3772 BUX12 ISKRA TIP 2n3055 iskra by 325 BU208A BDX20 TIP NPN BU134 bdx18 me

    2n5430

    Abstract: 411 00337 BDY57 BU912 TO-59 Package BOY90 BUR21 2N4898 2N4899 2N4900
    Text: CRIMSON SEMICONDUCTOR INC Ti DE | E S m D T b 2514096 CRIMSON SEMICONDUCTOR INC 99D 00337 D ' " T “ 33-0/ EPITA XIA L PLANAR - TO-66 NPN PN P BUR10 * BUR11 * BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428 2N5429 2N5430 BUX78 2N4898 2N4899 2N4900 «CM V


    OCR Scan     		PDF BUR10 BUR11 BUR12 BUX77 BUX78 2N4910 2N4898 2N4911 2N4899 2N4912 2n5430 411 00337 BDY57 BU912 TO-59 Package BOY90 BUR21 2N4900

    BUW50

    Abstract: BUW19 BUW35 buw23 SOT93 BW62 BUW46 BUW90 SOT93 package transistor packages sot93
    Text: MAE J> • 013310? ODGDMSS TfiG ■ SMLB SEMELABE SEMELAB Rei Code KEQ REQ KEQ HR HE HR HE HR HR HR HR HR HR HR REQ REQ REQ REQ REQ REQ REQ CECC CECC HR CECC CECC CECC CECC HR HR HR HR CECC CECC CECC Pol NPN PNP PNP NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN


    OCR Scan     		PDF BUW19 10min BUW22 12min BUW23 BUW24 BUW25 BUW26 BUW34 BUW35 BUW50 BUW19 SOT93 BW62 BUW46 BUW90 SOT93 package transistor packages sot93

    2M3055

    Abstract: B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908
    Text: G E N E R A L P U R P O S E T R A N S IS T O R S Comple­ Type mentary V CE0 V CB0 V (V) 'c (A) hFE * 'c (A) V CE V CEsat (V) (V) 9 'c (A) 'b R 1hj-c (mA) fC/W) 1.5 1.17 1.17 1.17 1.17 1399 1047 1047 1053 1053 T O -3 T O -3 T O -39 T O -3 T O -3 1047 1047


    OCR Scan     		PDF 2N3055 2N3715 2N3716 2N3771 2M3772 2N3791 2N3792 2N4234 2N4398 2N4399 2M3055 B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908

    U/25/20/TN26/15/850/yd 803 ic

    Abstract: BUX22M JE13005 JE802 TIP+317+data+sheet bu808df1 je200 2n5337 S13003 2N6057
    Text: G E N E R A L P U R P O S E T R A N S IS T O R S TY PE ‘c V CE V CEsat 8 A (V) (V) 'o (A) 'b Rthj-c (mA) rc / w ) V CE0 V CB0 'c (V) (V) (A) 22 22 4 BD433 BD434 50 2.00 1.0 0.50 2.00 200 25 40 5 M JE200 M JE210 70 0.50 1.0 0.30 0.50 50 30 30 3 M JE520


    OCR Scan     		PDF BD433 JE200 JE520 D44H1 D44H2 D44C1 D44C2 D44C3 2N6288 BD435 U/25/20/TN26/15/850/yd 803 ic BUX22M JE13005 JE802 TIP+317+data+sheet bu808df1 2n5337 S13003 2N6057