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Flip Electronics MJE210STU BIPOLAR (BJT) TRANSISTOR PNP 25
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MJE210STU	Tube	59,826		3,000	1 - 10 - 100 - 1000 - 10000 $0.18	Buy Now
	MJE210STU	Tube	59,826		4,000	1 - 10 - 100 - 1000 - 10000 $0.16	Buy Now
onsemi MJE210G TRANS PNP 40V 5A TO126
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MJE210G	Bulk	1,577		1	1 $0.87 10 $0.755 100 $0.5227 1000 $0.37168 10000 $0.37168	Buy Now
Avnet Americas	MJE210G	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
	MJE210G	Bulk			1	1 $0.825 10 $0.731 100 $0.577 1000 $0.366 10000 $0.366	Buy Now
Mouser Electronics	MJE210G		1,798			1 $0.86 10 $0.738 100 $0.52 1000 $0.329 10000 $0.329	Buy Now
Quest Components	MJE210G		887			1 $1.0315 10 $1.0315 100 $0.5158 1000 $0.4126 10000 $0.4126	Buy Now
Rochester Electronics	MJE210G		144,011		1	1 $0.3354 10 $0.3354 100 $0.3153 1000 $0.2851 10000 $0.2851	Buy Now

ComSIT USA	MJE210G		165			1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics MJE210 TRANS PNP 25V 5A SOT32-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MJE210	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	MJE210	Tube			2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi MJE210 TRANS PNP 40V 5A TO126
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MJE210	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	MJE210		160			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi MJE210T TRANS PNP 40V 5A TO126
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MJE210T	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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MJE210 Datasheets (59)

Part	Manufacturer	Description	Type	PDF
MJE210	Fairchild Semiconductor	PNP EPITAXIAL SILICON TRANSISTOR	Original	PDF
MJE210	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor	Original	PDF
MJE210	Motorola	5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS	Original	PDF
MJE210	On Semiconductor	Complementary Silicon Power Plastic Transistors	Original	PDF
MJE210	STMicroelectronics	Silicon PNP Transistor	Original	PDF
MJE210	Central Semiconductor	Leaded Power Transistor General Purpose	Scan	PDF
MJE210	Fairchild Semiconductor	PNP EPITAXIAL SILICON TRANSISTOR	Scan	PDF
MJE210	Motorola	Semiconductor Data Library Volume 3 1974	Scan	PDF
MJE210	Motorola	Semiconductor Data Library Volume 3 1974	Scan	PDF
MJE210	Motorola	European Master Selection Guide 1986	Scan	PDF
MJE210	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
MJE210	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
MJE210	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
MJE210	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF

MJE210	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
MJE210	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
MJE210	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
MJE210	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
MJE210	Unknown	Transistor Replacements	Scan	PDF
MJE210	Unknown	Transistor Replacements	Scan	PDF

MJE210 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MJE200 Abstract: 1N5825 MJE210 MSD6100 Text: ON Semiconductor NPN MJE200 * PNP MJE210 * Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. *ON Semiconductor Preferred Device • Collector–Emitter Sustaining Voltage —	Original	PDF	MJE200 MJE210 r14525 MJE200/D MJE200 1N5825 MJE210 MSD6100
MJE210 Abstract: No abstract text available Text: MJE210 MJE210 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA Min. • Complement to MJE200 TO-126 1 1 . Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	PDF	MJE210 65MHz -100mA MJE200 O-126 MJE210
1N5825 Abstract: MJE200 MJE200G MJE210 MJE210G MJE210T MJE210TG MSD6100 Text: MJE200 − NPN, MJE210 − PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON	Original	PDF	MJE200 MJE210 MJE200/D 1N5825 MJE200G MJE210G MJE210T MJE210TG MSD6100
MJE200 Abstract: MJE210 Text: MJE200 MJE200 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA Min. • Complement to MJE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	PDF	MJE200 65MHz 100mA MJE210 O-126 MJE200 MJE210
Untitled Abstract: No abstract text available Text: MJE200 NPN , MJE210 (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • • • • • 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON	Original	PDF	MJE200 MJE210 MJE200/D
Transistor 834 Abstract: MJE210 TRANSISTOR B 834 Text: MJE210 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications.	Original	PDF	MJE210 MJE210 OT-32 OT-32 Transistor 834 TRANSISTOR B 834
MJE200G Abstract: MJE200 MJE210 MJE210G MJE210T MJE210TG to225 Text: MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS, 15 WATTS	Original	PDF	MJE200 MJE210 MJE200G MJE210G MJE210T MJE210TG to225
MJE210 Abstract: No abstract text available Text: MJE210 SILICON PNP TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain aydio amplifier applications. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM	Original	PDF	MJE210 MJE210 OT-32 OT-32
MJE200 Abstract: MJE210 Text: MJE200 MJE200 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA Min. • Complement to MJE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	PDF	MJE200 65MHz 100mA MJE210 O-126 MJE200 MJE210
MJE200 Abstract: MJE210 Text: ON Semiconductor NPN MJE200 * PNP MJE210 * Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low−power, high−gain audio amplifier applications. *ON Semiconductor Preferred Device • Collector−Emitter Sustaining Voltage —	Original	PDF	MJE200 MJE210 MJE200 MJE210
MJE200 Abstract: MJE210 NA180 Text: MJE210 PNP EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz IC= -100mA TO-126 • Complement to MJE200 ABSOLUTE MAXIMUM RATINGS Characteristic Collector- Base Voltage Collector-Emitter Voltage	Original	PDF	MJE210 65MHz -100mA O-126 MJE200 MJE200 MJE210 NA180
1N5825 Abstract: MJE200 MJE210 MSD6100 Text: ON Semiconductort NPN MJE200 * PNP MJE210 * Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. *ON Semiconductor Preferred Device • Collector–Emitter Sustaining Voltage —	Original	PDF	MJE200 MJE210 r14525 MJE200/D 1N5825 MJE200 MJE210 MSD6100
MJE200 Abstract: MJE200TSTU Text: MJE200 MJE200 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA Min. • Complement to MJE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	PDF	MJE200 65MHz 100mA MJE210 O-126 O-126 MJE200 MJE200TSTU
MJE210 Abstract: MJE200 to126 case Power Transistors TO-126 Case Text: MJE200 MJE210 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE200, MJE210 types are complementary silicon transistors designed for high gain amplifier applications. MARKING: FULL PART NUMBER	Original	PDF	MJE200 MJE210 MJE200, MJE210 O-126 500mA, 200mA 500mA 100mA, 10MHz to126 case Power Transistors TO-126 Case

Untitled Abstract: No abstract text available Text: MJE210 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP	Original	PDF	MJE210 MJE210 OT-32 OT-32
MJE2160 Abstract: MJE1090 power transistor audio amplifier 500 watts MJE2090 MJE210 MJE2093 MJE2103 Text: MJE2090 H, MJE2093 SILICON For Specifications, See MJE1090 Data. MJE2100 th r u MJE2103 (SILICON) For Specifications, See MJE 1090 Data. MJE2160 (silicon) PLASTIC MEDIUM-POWER NPN SILICON TRANSISTOR 1.5 AMPERE POWER TRANSISTOR NPN SILICON . . . designed for line operated audio output amplifier applications	OCR Scan	PDF	MJE2090 MJE2093 MJE1090 MIE2100 MJE2103 MJE2160 SeeAN-415) MJE2160 power transistor audio amplifier 500 watts MJE2090 MJE210 MJE2093 MJE2103
Untitled Abstract: No abstract text available Text: 7R5R537 OQaqOTI M: • / T m 3 1 - 0 7 _ SCS-THOMSON g^ gm[iCT«(gS_ S G MJE200 MJE210 S-THOMSON 30E ] COMPLEMENTARY POWER TRANSISTORS DESC RIPTIO N The MJE200 (NPN type) and MJE210 (PNP type) are silicon epitaxial-base transistors in Jedec	OCR Scan	PDF	7R5R537 MJE200 MJE210 O-126 MJE200-MJE210
Untitled Abstract: No abstract text available Text: SGS-THOMSON iMm@ignnCTisi«ii Sg¡ MJE210 SILICON PNP TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain	OCR Scan	PDF	MJE210 MJE210 OT-32 OT-32 O-126)
MJE200 Abstract: MJE210 Text: NPN EPITAXIAL SILICON TRANSISTOR MJE200 LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz lc=100mA T O -126 • C om plem ent to MJE210 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage C haracteristic V obo	OCR Scan	PDF	MJE200 65MHz 100mA MJE210 O-126 500mA, 200mA 100mA, 10MHz MJE200 MJE210
MJE200 Abstract: MJE210 JE230 Text: MJE200, MJE210 continued ELECTRICAL CH ARACTERISTICS ( T q * 2 5 ° C u nless o th erw ise n oted) C ha rac teristic Sym bol O F F C H A R A C T E R IS T IC S C olle cto r*?:m itter S u s t a in in g V o lt a g e U ) (I q - 10 m A d c , I b = 0) v C E O is u s )	OCR Scan	PDF	MJE200, MJE210 MJE200 MJE210 JE230
MJE200 Abstract: MJE210 Text: MJE200, MJE210 continued PNP MJE210 NPN MJE200 h FE< °C CURRENT G A IN F IG U R E 8 - D C C U R R E N T G A I N lc , C O L L E C T O R C U R R E N T (A M P) y, V O LT AG E (VO LTS) F IG U R E 9 - " O N " V O L T A G E 1C, C O L L E C T O R C U R R E N T (A M P)	OCR Scan	PDF	MJE200, MJE210 MJE200 J-150Â MJE200 MJE210
Untitled Abstract: No abstract text available Text: NPN EPITAXIAL SILICON TRANSISTOR MJE200 LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz lc=100mA T O -126 • C om plem ent to MJE210 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage Characteristic V cbO	OCR Scan	PDF	MJE200 65MHz 100mA MJE210
mje520 Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP Text: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50	OCR Scan	PDF	BD433 MJE200 MJE520 BD435 2N4921 2IM5190 2IM6037 MJE521 MJE180 BD135 SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
la 4142 Abstract: MJE340 MJE200 MJE210 MJE350 300V transistor pnp 2a 3V to 300V transformer Text: SAMSUNG S EM I C ONDU C T OR INC MJE210 14E O J j 71134142 QQGVbTfl 3 \| PNP EPITAXIAL SILICON TRANSISTOR COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz @ lc=-100m A Complementary to MJE200	OCR Scan	PDF	MJE210 65MHz -100mA MJE200 Vce--10V, MJE350 r-33-fl la 4142 MJE340 MJE200 MJE350 300V transistor pnp 2a 3V to 300V transformer

MJE210 Search Results

MJE210 Price and Stock

Flip Electronics MJE210STU

onsemi MJE210G

STMicroelectronics MJE210

onsemi MJE210

onsemi MJE210T

MJE210 Datasheets (59)

MJE210 Datasheets Context Search

MJE200

MJE210

1N5825

MJE200

Untitled

Transistor 834

MJE200G

MJE210

MJE200

MJE200

MJE200

1N5825

MJE200

MJE210

Untitled

MJE2160

Untitled

Untitled

MJE200

MJE200

MJE200

Untitled

mje520

la 4142