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onsemi 2N3055G TRANS NPN 60V 15A TO204
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N3055G	Tray	368		1	1 $5.55 10 $3.704 100 $2.6563 1000 $2.10688 10000 $2.10688	Buy Now
Avnet Americas	2N3055G	Tray	400	10 Weeks	1	1 $1.98299 10 $1.95518 100 $1.87175 1000 $1.87175 10000 $1.87175	Buy Now
	2N3055G	Bulk		16 Weeks, 4 Days	1	1 $4.88 10 $3.11 100 $2.62 1000 $2.62 10000 $2.62	Buy Now
Mouser Electronics	2N3055G		3,345			1 $4.85 10 $3.22 100 $2.65 1000 $2.1 10000 $2.07	Buy Now
Newark	2N3055G	Bulk	415		1	1 $4.88 10 $3.11 100 $2.62 1000 $2.35 10000 $2.35	Buy Now
TME	2N3055G				1	1 $4 10 $3.25 100 $2.56 1000 $2.56 10000 $2.56	Get Quote

ComSIT USA	2N3055G		4			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	2N3055G		1,400	11 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	2N3055G			12 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	2N3055G		300			1 - 10 $2.52 100 $2.37 1000 $2.08 10000 $1.99	Buy Now
onsemi 2N3055AG TRANS NPN 60V 15A TO204
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N3055AG	Tray	237		1	1 $7.27 10 $4.915 100 $3.5841 1000 $3.017 10000 $3.017	Buy Now
Avnet Americas	2N3055AG	Bulk		18 Weeks, 1 Days	1	1 $6.59 10 $4.69 100 $3.56 1000 $3.56 10000 $3.56	Buy Now
	2N3055AG	Tray		10 Weeks	100	1 - 10 - 100 $3.09436 1000 $2.793 10000 $2.793	Buy Now
Mouser Electronics	2N3055AG		220			1 $5.71 10 $4.17 100 $3.36 1000 $3.01 10000 $3.01	Buy Now
Newark	2N3055AG	Bulk	77		1	1 $5.83 10 $4.17 100 $3.55 1000 $3.26 10000 $3.26	Buy Now
	2N3055AG	Bulk			100	1 - 10 - 100 $4.69 1000 $3.6 10000 $3.6	Buy Now
Avnet Asia	2N3055AG			10 Weeks	300	1 - 10 - 100 - 1000 $3.09436 10000 $2.90795	Buy Now

Avnet Silica	2N3055AG		300	11 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	2N3055AG			12 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	2N3055AG		195			1 - 10 $3.6 100 $3.26 1000 $2.94 10000 $2.85	Buy Now
EVVO Semiconductor 2N3055 TRANS NPN 60V 15A TO3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N3055	Tray	175		1	1 $5.37 10 $3.762 100 $2.8088 1000 $2.5 10000 $2.5	Buy Now
STMicroelectronics 2N3055 TRANS NPN 60V 15A TO3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N3055	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	2N3055		37			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	2N3055		29			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	2N3055		300			1 - 10 $5.493 100 $3.662 1000 $3.662 10000 $3.662	Buy Now
Microchip Technology Inc 2N3055 TRANS NPN 70V 15A TO3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N3055	Bulk			100	1 - 10 - 100 $45.4702 1000 $45.4702 10000 $45.4702	Buy Now
Avnet Americas	2N3055	Bulk		36 Weeks	100	1 - 10 - 100 $47.74775 1000 $43.55026 10000 $43.55026	Buy Now
Newark	2N3055	Bulk			100	1 - 10 - 100 $45.47 1000 $43.73 10000 $43.73	Buy Now
Microchip Technology Inc	2N3055			36 Weeks		1 $48.97 10 $48.97 100 $48.97 1000 $48.97 10000 $48.97	Buy Now
Onlinecomponents.com	2N3055					1 - 10 - 100 $43.42 1000 $43.42 10000 $43.42	Buy Now

NAC	2N3055	Tray			7	1 $49.97 10 $49.97 100 $46.03 1000 $42.66 10000 $42.66	Buy Now
EBV Elektronik	2N3055			37 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	2N3055					1 - 10 - 100 $43.42 1000 $43.42 10000 $43.42	Buy Now

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2N3055 Datasheets (239)

Part	Manufacturer	Description	Datasheet Type	PDF
2N3055	Comset Semiconductors	Epitaxial-Base NPN Transistor - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	Original	PDF
2N3055	Micro Commercial Components	TRANS GP BJT NPN 60V 10A 2TO-3 - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	Original	PDF
2N3055	Microsemi	NPN power silicon transistor. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	Original	PDF
2N3055	Motorola	15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	Original	PDF
2N3055	On Semiconductor	General Purpose Bipolar Transistor, NPN, 60V, TO-3, 2-Pin - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	Original	PDF
2N3055	On Semiconductor	Complementary Silicon Power Transistors - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	Original	PDF
2N3055	Semelab	NPN power transistor, 100V, 15A - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	Original	PDF
2N3055	Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	Original	PDF
2N3055	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	Original	PDF
2N3055	STMicroelectronics	Complementary power transistors	Original	PDF
2N3055	STMicroelectronics	Complementary power transistors	Original	PDF
2N3055	STMicroelectronics	TRANS GP BJT NPN 60V 15A 2TO-3 - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	Original	PDF
2N3055	Transys Electronics	SILICON PLANAR POWER TRANSISTORS	Original	PDF
2N3055	USHA	High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	Original	PDF

2N3055	USHA	NPN silicon power transistor. 15 Amp, 60V, 115Watt. These devices are designed for general purpose switching and amplifier applications. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115	Original	PDF
2N3055	Various Russian Datasheets	Transistor	Original	PDF
2N3055	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF
2N3055	API Electronics	15 AMPS / 20 AMPS NPN Transistors	Scan	PDF
2N3055	API Electronics	Short form transistor data	Short Form	PDF
2N3055	API Electronics	Short form transistor data	Short Form	PDF

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2N3055 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N3055A Abstract: Vce(sat) MJ2955A Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055A DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE sat = 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955A	Original	2N3055A MJ2955A 2N3055A Vce(sat) MJ2955A	PDF
2N3055HV Abstract: transistor 2N3055hv Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055HV NPN POWER TRANSISTOR TO-3 Metal Can Package Switching Regulator and Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Open Emitter	Original	2N3055HV C-120 2N3055HVRev110302D 2N3055HV transistor 2N3055hv	PDF
2n3055 Abstract: 2N3055-7 equivalent transistor 2n3055 JANTX 2n3055 2N3055 semelab Text: 2N3055/7 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2N3055/7 O204AA) 31-Jul-02 2n3055 2N3055-7 equivalent transistor 2n3055 JANTX 2n3055 2N3055 semelab	PDF
Untitled Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION	Original	2N3055 MJ2955 C-120 MJ2955Rev291201E	PDF
2N3055-6 Abstract: 2n3055 2N3055 to3 JANTX 2n3055 VCEO100V Text: 2N3055/6 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2N3055/6 O204AA) 31-Jul-02 2N3055-6 2n3055 2N3055 to3 JANTX 2n3055 VCEO100V	PDF
Untitled Abstract: No abstract text available Text: ., {Jnc, <Se.ml-C.onJiu.ctoi 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212) 227-6005 FAX: (201) 376-8960 2N3055 NPN SILICON POWER TRANSISTOR •MAXIMUM RATINGS Symbol Riling . Unit V.lu, ^CollMtor-Emlimr Voltao» VCEO 6O	Original	2N3055	PDF
Untitled Abstract: No abstract text available Text: c^ Jstisii*/ <£s.m.i-(lon.<Licko\ Una. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN 2N3055A Complementary Silicon High-Power TVansistors MJ15015 . . PowerBase complementary transistors designed for high	Original	2N3055A MJ15015 2N3055 MJ2955. MJ2955A MJ15016 TQ-204AA 550REF	PDF
Untitled Abstract: No abstract text available Text: c3\£. , LJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3055C N-P-N SILICON POWER TRANSISTOR ELECTRICAL CHARACTERISTICS (Tcai. = 25 °C unless otherwise specified) Test conditions Parameter	Original	2N3055C 100mA 200mA	PDF
2n3055 malaysia Abstract: Mj2955 Text: 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector-emitter saturation voltage TAB • Complementary NPN - PNP transistors Applications • General purpose 1 • Audio amplifier 2 Description TO-3 Figure 1.	Original	2N3055, MJ2955 2N3055 DocID4079 2n3055 malaysia Mj2955	PDF
Untitled Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055HV NPN POWER TRANSISTOR TO-3 Metal Can Package Switching Regulator and Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Open Emitter	Original	2N3055HV C-120 2N3055HVRev110302D	PDF
pmd10K80 Abstract: PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88 Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789	Original	2N3055 MJ2955 2N3442 2N3713 2N3789 2N3714 2N3790 2N3715 2N3791 2N3716 pmd10K80 PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88	PDF
Untitled Abstract: No abstract text available Text: 2N3055A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2N3055A O204AA) 18-Jun-02	PDF
MJ15016 Abstract: 2N3055AG MJ15015 2N3055A MJ15015G MJ15016G 2N3055 NPN Transistor 2N3055 2N3055A 2n3055 MJ-15016 Text: 2N3055A NPN , MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These	Original	2N3055A MJ15015 MJ15016 MJ15015 MJ15016 2N3055. O-204AA 2N3055AG 2N3055A MJ15015G MJ15016G 2N3055 NPN Transistor 2N3055 2N3055A 2n3055 MJ-15016	PDF
2N3055 Abstract: MJ2955 TRANSISTOR MJ2955 2N3055 MEXICO pnp transistor 2N3055 t 2N3055 2N3055 MJ2955 Transistor MJ2955 MJ2955 mexico 2N3055 JAPAN Text: 2N3055 MJ2955  COMPLEMENTARY SILICON POWER TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series	Original	2N3055 MJ2955 2N3055 MJ2955. MJ2955 TRANSISTOR MJ2955 2N3055 MEXICO pnp transistor 2N3055 t 2N3055 2N3055 MJ2955 Transistor MJ2955 MJ2955 mexico 2N3055 JAPAN	PDF

2N3055 Abstract: 2N3055-1 2N3055/1 2n3055 circuit 2n3055 amplifier 2N3055 power amplifier circuit 2N3055 power circuit 2N3055 TO-3 hfe 2n3055 2n3055 IC Text: HIGH POWER TRANSISTOR NPN 2N3055 15A 115W Technical Data …designed for general-purpose switching and amplifier application. F DC Current Gain - h FE = 20 – 70 @ IC = 4Adc F Collector-Emitter Saturation Voltage – VCE sat = 1.1 Vdc (Max) @ IC = 4Adc F Excellent Safe Operating Area	Original	2N3055 2N3055) 2N3055 2N3055-1 2N3055/1 2n3055 circuit 2n3055 amplifier 2N3055 power amplifier circuit 2N3055 power circuit 2N3055 TO-3 hfe 2n3055 2n3055 IC	PDF
texas 2n3055 Abstract: BU108 2n3055 MJ15003 2SD424 BDX54 MJ2955 replacement 2n3055 replacement 2N5655 equivalent BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955* Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc	Original	2N3055 MJ2955* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C texas 2n3055 BU108 2n3055 MJ15003 2SD424 BDX54 MJ2955 replacement 2n3055 replacement 2N5655 equivalent BU326 BU100	PDF
TEXAS 2N3055 Abstract: 2N3055 transistor 2N3055 2N3055 silicon Text: TYPE 2N3055 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR FOR POWER-AMPLIFIiR APPLICATIONS • 115 W a t 25°C Case T e m p e ra tu re • Max lc of 15 A • Min fhf* of 20 kHz * m e c h a n ica l d a ta ALL JEDEC TO-3 D IM EN SIO N S A N D N O TES ARE APPLICABLE	OCR Scan	2N3055 TEXAS 2N3055 2N3055 transistor 2N3055 2N3055 silicon	PDF
ZENER 2V7 Abstract: J 2N3055 2n3055 general purpose 2n3055 transistors J1N4150 J-BDX64 1N457/A 4446 BDX66 BZX85 C27 Text: chips/pastilles power transistors transistors de puissance THOMSON-CSF P Types h2i E VCE min. NPN W PNP 117 117 60 90 117 J-2N3055 J-BDX J-BDX J-BDX J-BDX 53 63 65 67 J-BDX18 J-BDX54 J-BDX62 J-BDX64 J-BDX66 ISO (V) 45 60 60 60 20 20 750 1000 1000 1000 60	OCR Scan	J-2N3055 J-BDX18 J-BDX54 J-BDX62 J-BDX64 J-BDX66 j-1n457 ZENER 2V7 J 2N3055 2n3055 general purpose 2n3055 transistors J1N4150 1N457/A 4446 BDX66 BZX85 C27	PDF
TIP 2n3055 Abstract: transistor tip 5530 tip 147 TRANSISTOR equivalent TIP 122 transistor TIP 41 transistor transistor tip 3055 TIP 122 transistor APPLICATION NOTES transistor TIP 42 tip 127 TRANSISTOR equivalent TRANSISTOR tip 127 Text: T Y P E TIP3055 N-P-N SIN G LE-D IFFU SED M ESA SILICON POWER TRAN SISTO R FO R POWEiR A M P L IF IE R A N D H IG H -S P E E D SW IT C H IN G A P P L IC A T IO N S P L A S T IC -C A S E R E P L A C E M E N T F O R 2N3055 • 90 Watts at 25°C Case Temperature	OCR Scan	TIP30S5 2N3055 TIP 2n3055 transistor tip 5530 tip 147 TRANSISTOR equivalent TIP 122 transistor TIP 41 transistor transistor tip 3055 TIP 122 transistor APPLICATION NOTES transistor TIP 42 tip 127 TRANSISTOR equivalent TRANSISTOR tip 127	PDF
2N30S5 Abstract: 2N305 Text: 2N3055A 2N3055A NPN POWER TRANSISTOR High Power Audio, Stepping Motor and Other Linear Applications DIM A B C D E F G H J K I M MIN MAX 39,37 22,22 8,50 6,35 1.09 0,96 1,77 29,90 30,4 10,69 11,18 5,72 5,20 16,64 17,15 11,15 12,25 26,67 3,84 4,19 - PIN CONFIGURATION	OCR Scan	2N3055A 2N30S5A 2N30S5 2N305	PDF
2N3055E specification Abstract: 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package Text: BS/CECC Type No. Polarity 2N 2906\ CV-0 PNP 2N2906A; PNP 1CV' ° 2N2907 1 f f j CV-0 PNP CV-0 PNP 2N2907A 2N2913y 1 50002-186 NPN Dual '2N3054 >2N3055 / ^2N3055E r rX2N3209 1 ^¿2N3209L / • ° 50004-042 50003-020 50004-XXX 50004-XXX 2N3347 2N3348 2N3349	OCR Scan	ai331 2N2906\ 2N2906A* 2N2907 2N2907A 2N2913y 2N2914\ 2N2915 2N2916 2N2917 2N3055E specification 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package	PDF
2N3442 Abstract: 2N5875 NPN Transistor 2N3055 darlington 2N3055 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 Text: Pow er Transistors TO-3 Case TYPE NO. •c Pd BVc b O b v C e o @ Ic hFE VCE SAT @ <c TYP (A) NPN 2N3055 PNP MJ2955 2N3442 (W) MAX 15 115 (A) (V) (V) MIN MIN MIN 100 60 5.0 — 00 (A) 10 (MHZ) MIN MAX MAX fT TYP 3.0 10 2.5 . 10 117 160 140 20 70 3.0 5.0	OCR Scan	2N3055 MJ2955 2N3442 2N3713 2N3789 2N3714 2N3790 2N3715 2N3791 2N3716 2N3442 2N5875 NPN Transistor 2N3055 darlington	PDF
2n3055 Abstract: MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier 2N3055 curve npn 2n3055 2n3055 collector characteristic curve 2N3055/MJ2955 MJ2955 MJ2955 TRANSISTOR Text: COMPLEMENTARY SILICON POWER TRANSISTORS NPN 2N3055 .designed for use in general-purpose amplifier and switching applications PNP MJ2955 Boca Semiconductor Corp. BSC FEATURES: * Power Dissipation - PD = 115W @ Tc = 25°C * DC Current Gain hFE = 20 ~ 70 @ lc = 4.0 A	OCR Scan	2N3055 MJ2955 MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier 2N3055 curve npn 2n3055 2n3055 collector characteristic curve 2N3055/MJ2955 MJ2955 MJ2955 TRANSISTOR	PDF
Westinghouse Semiconductor Abstract: westinghouse transistors 2n3055 voltage regulator westinghouse 2N3055 Text: POüJEREX INC TD 54-673 Page 1 i Silicon Power Transistors J E D E C T y p e 2N3055 Westinghouse ö > H > co For Switching Amplifier and Regulator Applications 15 Amperes, 115 Watts IV sQ X m m Application The Westinghouse 2N3055 is an NPN dif fused transistor. This general-purpose tran	OCR Scan	2N3055 2N3055 C/2116/DB; C/2117 Westinghouse Semiconductor westinghouse transistors 2n3055 voltage regulator westinghouse 2N3055	PDF

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onsemi 2N3055G

onsemi 2N3055AG

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2N3055 Datasheets (239)

2N3055 Datasheets Context Search

2N3055A

2N3055HV

2n3055

Untitled

2N3055-6

Untitled

Untitled

Untitled

2n3055 malaysia

Untitled

pmd10K80

Untitled

MJ15016

2N3055

2N3055

texas 2n3055

TEXAS 2N3055

ZENER 2V7

TIP 2n3055

2N30S5

2N3055E specification

2N3442

2n3055

Westinghouse Semiconductor