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Rochester Electronics LLC MJE200STU TRANS NPN 25V 5A TO126-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MJE200STU	Bulk	99,932		1,665	1 - 10 - 100 - 1000 - 10000 $0.18	Buy Now
onsemi MJE200G TRANS NPN 40V 5A TO126
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MJE200G	Bulk	2,141		1	1 $1.02 10 $0.683 100 $1.02 1000 $0.3463 10000 $0.2875	Buy Now
Avnet Americas	MJE200G	Bulk		8 Weeks, 4 Days	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
	MJE200G	Bulk		10 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.3013	Buy Now
Mouser Electronics	MJE200G		2,217			1 $0.93 10 $0.683 100 $0.473 1000 $0.329 10000 $0.329	Buy Now
Verical	MJE200G		2,000		500	1 - 10 - 100 - 1000 $0.3926 10000 $0.3649	Buy Now
	MJE200G		200		22	1 - 10 - 100 $0.4329 1000 $0.3148 10000 $0.2757	Buy Now
Arrow Electronics	MJE200G		200	10 Weeks	1	1 $0.9032 10 $0.6702 100 $0.4329 1000 $0.3148 10000 $0.2757	Buy Now

Newark	MJE200G	Bulk	1,089		1	1 $0.877 10 $0.757 100 $0.564 1000 $0.368 10000 $0.366	Buy Now
Onlinecomponents.com	MJE200G		2,000			1 - 10 - 100 - 1000 $0.302 10000 $0.2765	Buy Now
Bristol Electronics	MJE200G		334			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	MJE200G		389			1 $1.069 10 $1.069 100 $0.5345 1000 $0.4276 10000 $0.4276	Buy Now
	MJE200G		24			1 $0.6414 10 $0.5345 100 $0.5345 1000 $0.5345 10000 $0.5345	Buy Now
Rochester Electronics	MJE200G		56,809		1	1 $0.3194 10 $0.3194 100 $0.3002 1000 $0.2715 10000 $0.2715	Buy Now
Chip 1 Exchange	MJE200G		3,620			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	MJE200G			11 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip1Stop	MJE200G	Bulk	1			1 $0.546 10 $0.546 100 $0.546 1000 $0.546 10000 $0.546	Buy Now
EBV Elektronik	MJE200G			12 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	MJE200G		400			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	MJE200G		2,000			1 - 10 - 100 - 1000 $0.302 10000 $0.2765	Buy Now
New Advantage Corporation	MJE200G		1,000		1	1 - 10 - 100 - 1000 $0.4478 10000 $0.4478	Buy Now
onsemi MJE200STU TRANS NPN 25V 5A TO126-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MJE200STU	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	MJE200STU		99,932		1	1 $0.1733 10 $0.1733 100 $0.1629 1000 $0.1473 10000 $0.1473	Buy Now
Flip Electronics	MJE200STU		2,700			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi MJE200TSTU TRANS NPN 25V 5A TO126-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MJE200TSTU	Tube			1,920	1 - 10 - 100 - 1000 - 10000 $0.11032	Buy Now
STMicroelectronics MJE200
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MJE200		4,621		7	1 - 10 $0.75 100 $0.375 1000 $0.15 10000 $0.1125	Buy Now
Quest Components	MJE200		3,696			1 $1 10 $1 100 $1 1000 $0.2 10000 $0.15	Buy Now
	MJE200		1,409			1 $0.65 10 $0.65 100 $0.65 1000 $0.26 10000 $0.26	Buy Now
	MJE200		287			1 $0.65 10 $0.65 100 $0.39 1000 $0.325 10000 $0.325	Buy Now
	MJE200		33			1 $0.39 10 $0.39 100 $0.325 1000 $0.325 10000 $0.325	Buy Now

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MJE200 Datasheets (30)

Part	Manufacturer	Description	Datasheet Type	PDF
MJE200	Fairchild Semiconductor	NPN EPITAXIAL SILICON TRANSISTOR	Original	PDF
MJE200	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor	Original	PDF
MJE200	Motorola	5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS	Original	PDF
MJE200	On Semiconductor	Bipolar Power C77 NPN 5A 25V; Package: TO-225; No of Pins: 3; Container: Bulk; Qty per Container: 500	Original	PDF
MJE200	On Semiconductor	Complementary Silicon Power Plastic Transistors	Original	PDF
MJE200	Central Semiconductor	Silicon Power Transistors, TO-126 Case	Scan	PDF
MJE200	Fairchild Semiconductor	NPN EPITAXIAL SILICON TRANSISTOR	Scan	PDF
MJE200	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
MJE200	Motorola	Semiconductor Data Library Volume 3 1974	Scan	PDF
MJE200	Motorola	Semiconductor Data Library Volume 3 1974	Scan	PDF
MJE200	Motorola	European Master Selection Guide 1986	Scan	PDF
MJE200	Motorola	Semiconductor Data Library Volume 3 1974	Scan	PDF
MJE200	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
MJE200	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF

MJE200	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
MJE200	Unknown	Transistor Replacements	Scan	PDF
MJE200	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
MJE200	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
MJE200	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
MJE200	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF

MJE200 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MJE200 Abstract: 1N5825 MJE210 MSD6100 Text: ON Semiconductor NPN MJE200 * PNP MJE210 * Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. *ON Semiconductor Preferred Device • Collector–Emitter Sustaining Voltage —	Original	PDF	MJE200 MJE210 r14525 MJE200/D MJE200 1N5825 MJE210 MSD6100
MJE210 Abstract: No abstract text available Text: MJE210 MJE210 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA Min. • Complement to MJE200 TO-126 1 1 . Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	PDF	MJE210 65MHz -100mA MJE200 O-126 MJE210
1N5825 Abstract: MJE200 MJE200G MJE210 MJE210G MJE210T MJE210TG MSD6100 Text: MJE200 − NPN, MJE210 − PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON	Original	PDF	MJE200 MJE210 MJE200/D 1N5825 MJE200G MJE210G MJE210T MJE210TG MSD6100
MJE200 Abstract: MJE210 Text: MJE200 MJE200 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA Min. • Complement to MJE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	PDF	MJE200 65MHz 100mA MJE210 O-126 MJE200 MJE210
Untitled Abstract: No abstract text available Text: MJE200 NPN , MJE210 (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • • • • • 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON	Original	PDF	MJE200 MJE210 MJE200/D
MJE200G Abstract: MJE200 MJE210 MJE210G MJE210T MJE210TG to225 Text: MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS, 15 WATTS	Original	PDF	MJE200 MJE210 MJE200G MJE210G MJE210T MJE210TG to225
MJE200 Abstract: MJE210 Text: MJE200 MJE200 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA Min. • Complement to MJE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	PDF	MJE200 65MHz 100mA MJE210 O-126 MJE200 MJE210
MJE200 Abstract: MJE210 Text: ON Semiconductor NPN MJE200 * PNP MJE210 * Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low−power, high−gain audio amplifier applications. *ON Semiconductor Preferred Device • Collector−Emitter Sustaining Voltage —	Original	PDF	MJE200 MJE210 MJE200 MJE210
MJE200 Abstract: MJE210 NA180 Text: MJE210 PNP EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz IC= -100mA TO-126 • Complement to MJE200 ABSOLUTE MAXIMUM RATINGS Characteristic Collector- Base Voltage Collector-Emitter Voltage	Original	PDF	MJE210 65MHz -100mA O-126 MJE200 MJE200 MJE210 NA180
1N5825 Abstract: MJE200 MJE210 MSD6100 Text: ON Semiconductort NPN MJE200 * PNP MJE210 * Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. *ON Semiconductor Preferred Device • Collector–Emitter Sustaining Voltage —	Original	PDF	MJE200 MJE210 r14525 MJE200/D 1N5825 MJE200 MJE210 MSD6100
MJE200 Abstract: MJE200TSTU Text: MJE200 MJE200 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA Min. • Complement to MJE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	PDF	MJE200 65MHz 100mA MJE210 O-126 O-126 MJE200 MJE200TSTU
MJE210 Abstract: MJE200 to126 case Power Transistors TO-126 Case Text: MJE200 MJE210 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE200, MJE210 types are complementary silicon transistors designed for high gain amplifier applications. MARKING: FULL PART NUMBER	Original	PDF	MJE200 MJE210 MJE200, MJE210 O-126 500mA, 200mA 500mA 100mA, 10MHz to126 case Power Transistors TO-126 Case
MJE200 Abstract: No abstract text available Text: MJE200 MJE200 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA Min. • Complement to MJE210 TO-126 1 1 . Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	PDF	MJE200 65MHz 100mA MJE210 O-126 MJE200
1N5825 Abstract: MJE200 MJE210 MSD6100 mje210 motorola Text: MOTOROLA Order this document by MJE200/D SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —	Original	PDF	MJE200/D MJE200* MJE210* MJE200/D* 1N5825 MJE200 MJE210 MSD6100 mje210 motorola

MJE200 Abstract: MJE210 Text: MJE200 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz IC=100mA TO-126 • Complement to MJE210 ABSOLUTE MAXIMUM RATINGS Characteristic Collector- Base Voltage Collector-Emitter Voltage	Original	PDF	MJE200 65MHz 100mA O-126 MJE210 MJE200 MJE210
Untitled Abstract: No abstract text available Text: 7R5R537 OQaqOTI M: • / T m 3 1 - 0 7 _ SCS-THOMSON g^ gm[iCT«(gS_ S G MJE200 MJE210 S-THOMSON 30E ] COMPLEMENTARY POWER TRANSISTORS DESC RIPTIO N The MJE200 (NPN type) and MJE210 (PNP type) are silicon epitaxial-base transistors in Jedec	OCR Scan	PDF	7R5R537 MJE200 MJE210 O-126 MJE200-MJE210
MJE200 Abstract: MJE210 Text: NPN EPITAXIAL SILICON TRANSISTOR MJE200 LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz lc=100mA T O -126 • C om plem ent to MJE210 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage C haracteristic V obo	OCR Scan	PDF	MJE200 65MHz 100mA MJE210 O-126 500mA, 200mA 100mA, 10MHz MJE200 MJE210
MJE200 Abstract: MJE210 JE230 Text: MJE200, MJE210 continued ELECTRICAL CH ARACTERISTICS ( T q * 2 5 ° C u nless o th erw ise n oted) C ha rac teristic Sym bol O F F C H A R A C T E R IS T IC S C olle cto r*?:m itter S u s t a in in g V o lt a g e U ) (I q - 10 m A d c , I b = 0) v C E O is u s )	OCR Scan	PDF	MJE200, MJE210 MJE200 MJE210 JE230
MJE200 Abstract: MJE210 Text: MJE200, MJE210 continued PNP MJE210 NPN MJE200 h FE< °C CURRENT G A IN F IG U R E 8 - D C C U R R E N T G A I N lc , C O L L E C T O R C U R R E N T (A M P) y, V O LT AG E (VO LTS) F IG U R E 9 - " O N " V O L T A G E 1C, C O L L E C T O R C U R R E N T (A M P)	OCR Scan	PDF	MJE200, MJE210 MJE200 J-150Â MJE200 MJE210
Untitled Abstract: No abstract text available Text: NPN EPITAXIAL SILICON TRANSISTOR MJE200 LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz lc=100mA T O -126 • C om plem ent to MJE210 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage Characteristic V cbO	OCR Scan	PDF	MJE200 65MHz 100mA MJE210
la 4142 Abstract: MJE340 MJE200 MJE210 MJE350 300V transistor pnp 2a 3V to 300V transformer Text: SAMSUNG S EM I C ONDU C T OR INC MJE210 14E O J j 71134142 QQGVbTfl 3 \| PNP EPITAXIAL SILICON TRANSISTOR COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz @ lc=-100m A Complementary to MJE200	OCR Scan	PDF	MJE210 65MHz -100mA MJE200 Vce--10V, MJE350 r-33-fl la 4142 MJE340 MJE200 MJE350 300V transistor pnp 2a 3V to 300V transformer
MJE200NPN Abstract: No abstract text available Text: MJE200NPN SILICON MJE210PNP COMPLEMENTARY SILICON POWER PLASTIC TRANSISTORS 5 AMPERE . . . designed for low voltage, low*power, high-gain audio am plifier applications. • Collector-Em itter Sustaining Voltage —• • High DC Current Gain - • Low C ollector-E m itter Saturation Voltage -	OCR Scan	PDF	MJE200NPN MJE210PNP 25ERATING MJE200NPN
Untitled Abstract: No abstract text available Text: ¡SAMSUNG SEM IC ON DU CTOR MJE200 INC IME 0 \| 7^4142 □ 0 Q 7 b tit NPN EPITAXIAL SILICON TRANSISTOR CÒ LLECTOR-EM ITTER SU STAINING VOLTAGE LOW CO LLECTOR-EM ITTER SATURATION VOLTAGE HIGH CU RREN T GAIN-BANDW IDTH PRODUCT-MIN fT=65MHz @ lc=100m A Complementary to MJE210	OCR Scan	PDF	MJE200 65MHz MJE210 GQG77fe
JE201 Abstract: No abstract text available Text: / I T SCS-THOMSON “ 7# M M[R[iOT *S MJE200 MJE210 COMPLEMENTARY POWER TRANSISTORS DESCRIPTION The MJE200 (NPN type and MJE210 (PNP type) are silicon epitaxial-base transistors in Jedec TO-126 plastic package, designed for low voltage, low power, high gain audio amplifier applications.	OCR Scan	PDF	MJE200 MJE210 O-126 JE201

MJE200 Search Results

MJE200 Price and Stock

Rochester Electronics LLC MJE200STU

onsemi MJE200G

onsemi MJE200STU

onsemi MJE200TSTU

STMicroelectronics MJE200

MJE200 Datasheets (30)

MJE200 Datasheets Context Search

MJE200

MJE210

1N5825

MJE200

Untitled

MJE200G

MJE200

MJE200

MJE200

1N5825

MJE200

MJE210

MJE200

1N5825

MJE200

Untitled

MJE200

MJE200

MJE200

Untitled

la 4142

MJE200NPN

Untitled

JE201