Contextual Info: CRIMSON SE MICO ND UC TO R INC TT D eTJI e SIMD^ b 0DQ0337 4 • . 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 00 3 3 7 ! D ' ' f ' 3 3 - 0/ ! EPITAXIAL PLANAR - TO -66 NPN PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428

2N4912XSMD

Contextual Info: 2N4912XSMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed

2N4912

Abstract: 2N4912 MOTOROLA
Contextual Info: MOTORGLA SC X S T R S /R F 1EE D I b3b?5S4 GQfl4517 2 | SEMICONDUCTOR 2N4912 " ^ 3 3 ' 0 e! MOTOROLA TECHNICAL DATA NPN SILIC O N TRANSISTO R 1 AMPERE . . . designed for driver circuits, switching, and amplifier applications. This high-performance device features:

2n4912

Contextual Info: 2N4912 w w w. c e n t r a l s e m i . c o m SILICON NPN POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4912 is a silicon NPN power transistor manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose amplifier and

Contextual Info: 2N4912 POWER TRANSISTORS 1A - 80V - 25W 1.51 Transistors Bip. 1 of 1 Home Part Number: 2N4912 Online Store 2N4912 Diodes PO WER TRANSISTO RS( 1 A - 8 0 V - 2 5 W) Transistors Enter code INTER3 at checkout.*

Contextual Info: COLLECTOR CURRENT = 2 AMPS NPN TYPES 2N1720 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3665 2N3666 2N3766 2N3767 2N3917 2N3918 2N4000 2N4001 2N4237 2N4238 2N4239 2N4240 2N4862 2N4863 2N4864 2N4910 2N4911 2N4912 2N5050

2N3738 equivalent

Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420
Contextual Info: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912

Contextual Info: 2N4910X 2N4911X 2N4912X MECHANICAL DATA Dimensions in mm inches NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. FEATURES 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034)

2N4910X

Abstract: 2N4911X 2N4912X
Contextual Info: 2N4910X 2N4911X 2N4912X MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. APPLICATIONS • SCREENING OPTIONS AVAILABE 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 2 1 14.48 (0.570)

Contextual Info: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) • 40-425V PNP Power Transistors NPN Typ. No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 coinplMMnl 2N3766 2N3767 2N4910 2N4911 2N4912 (A) VCE(SAT) 0IC/IB (V0A/A) VBE IOVCE

2N4912XSMD05

Contextual Info: 2N4912XSMD05 Dimensions in mm inches . 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount

2N4912

Contextual Info: ¿Z&MOSPEC NPN SILICON TRANSISTORS .designed for driver circuits, switching and amplifier applications. NPN 2N4912 FEA TU RES: * Low Collector-Emitter Saturation Voltage VCE,Mt = 0 .6 V M a x .)@ lc = 1 .0A * Excellent Safe Operating Area * Gain Specified to lc= 1.0 Amp.

2N3740

Abstract: 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4898 2N4899 2N4910 2N4911
Contextual Info: NE III ENGLAND SEMI CONDUCT OR 5TE bSbHTTa D = 1-5À VCEO SUS = 4 0 -4 2 5 V fT = 3-10 M H z □□□□□SO lc ( M A X ) Type No. 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N4898 2N4899 2N4900 2N5344 2N4910 2N4911 2N4912 2N3767 VCEQ (SUS) (V) 1C (MAX) (A) 60

Contextual Info: Z CL CL CL CL C L Z Z Z Z Z CL CL CL CL CL CL CL CL CL Z Z Z Z Z Q- CL CL CL CL z zzzz Q- CL CL CL CL 2N4910 2N4911 2N4912 2N4913 2N4914 CL CL CL CL CL Z Z Z Z Z CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz o o o o o c l cl o dd z zz z ‘

Contextual Info: SILICON EPITAXIAL NPN TRANSISTOR 2N4912 • Low Saturation Voltage Transistor In A Hermetic Metal Package • Designed For Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

2N4912

Abstract: LE17
Contextual Info: SILICON EPITAXIAL NPN TRANSISTOR 2N4912 • Low Saturation Voltage Transistor In A Hermetic Metal Package • Designed For Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

2N4912

Contextual Info: 2N4912 NPN SILICON TRANSISTORS .designed for driver circuits, switching, and amplifier applications. This high-performance device features: • • • • LOW SATURATION VOLTAGE - VCE SAT = 0.6 V MAX @ Ic = 1.0 AMP. EXCELLENT SAFE OPERATION AREA GAIN SPECIFIED TO Ic = 1.0 AMP.

2N5428

Contextual Info: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912

2N4898

Abstract: 2N4900 2N4899 2N4912
Contextual Info: SavantIC Semiconductor Product Specification 2N4898 2N4899 2N4900 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area ·2N4900 complement to type 2N4912 APPLICATIONS ·Designed for driver circuits,switching

2N4912

Abstract: 2N4910 2N4911 2N4900
Contextual Info: SavantIC Semiconductor Product Specification 2N4910 2N4911 2N4912 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area ·2N4912 complement to type 2N4900 APPLICATIONS ·Designed for driver circuits,switching

2N4912

Abstract: Vceo 80V Ic 1A 2N4900 transistor Ic 1A datasheet NPN IC 1A 80V 1A NPN Transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N4912 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 80V(Min) ·Low Collector Saturatioin Voltage: VCE(sat)= 0.6V(Max.)@ IC= 1A ·Wide Area of Safe Operation

2n5430

Abstract: 411 00337 BDY57 BU912 TO-59 Package BOY90 BUR21 2N4898 2N4899 2N4900
Contextual Info: CRIMSON SEMICONDUCTOR INC Ti DE | E S m D T b 2514096 CRIMSON SEMICONDUCTOR INC 99D 00337 D ' " T “ 33-0/ EPITA XIA L PLANAR - TO-66 NPN PN P BUR10 * BUR11 * BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428 2N5429 2N5430 BUX78 2N4898 2N4899 2N4900 «CM V

2n4912

Contextual Info: ¿Z&MOSPEC NPN SILICON TRANSISTORS .designed for driver circuits, switching and amplifier applications. NPN 2N4912 FEA TU RES: * Low Collector-Emitter Saturation Voltage VCE,Mt = 0 .6 V M a x .)@ lc = 1 .0A * Excellent Safe Operating Area * Gain Specified to lc= 1.0 Amp.

4912

Abstract: 40VVCR 2N4900 4911 2N4910 2n4912
Contextual Info: EPITAXIAL PLANAR NPN 4 9 10 2N 4 9 11 2N 4 9 12 MEDIUM POWER GENERAL PURPOSE TRANSISTORS The 2N 4910. 2N4911 and 2N4912 are silicon epitaxial planar NPN transistors in Jedec TO -66 metal case. They are intended for use in switching and am plifier applications.