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    BDY57 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDY57 Comset Semiconductors NPN SILICON TRANSISTOR, DIFFUSED MESA Original PDF
    BDY57 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=25 / Hfe=20-60 / fT(Hz)=7M / Pwr(W)=175 Original PDF
    BDY57 Crimson Semiconductor EPITAXIAL PLANAR / MULTIEPITAXIAL PLANAR Transistors Scan PDF
    BDY57 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDY57 Unknown Transistor Replacements Scan PDF
    BDY57 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BDY57 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BDY57 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDY57 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDY57 SGS-Thomson Transistor Datasheet Scan PDF
    BDY57 Solitron Devices Pro Electron Power Transistors Scan PDF
    BDY57 Thomson-CSF Condensed Data Book 1977 Scan PDF
    BDY57 Thomson-CSF Power Transistor Data Book 1975 Scan PDF
    BDY57 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDY57A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDY57A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDY57A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    BDY57 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BDY57

    Abstract: BDY58
    Text: Inchange Semiconductor Product Specification BDY57 BDY58 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High current capability ・Fast switching speed APPLICATIONS ・For use in low frequency large signal power amplifications PINNING See Fig.2


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    BDY57 BDY58 BDY57 10MHz BDY58 PDF

    BDY58

    Abstract: BDY57
    Text: SavantIC Semiconductor Product Specification BDY57 BDY58 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For use in low frequency large signal power amplifications PINNING See Fig.2


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    BDY57 BDY58 BDY57 10MHz BDY58 PDF

    Untitled

    Abstract: No abstract text available
    Text: BDY57 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    BDY57 O204AA) 16-Jul-02 PDF

    BDY57

    Abstract: No abstract text available
    Text: BDY57 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    BDY57 O204AA) 18-Jun-02 BDY57 PDF

    bdy58

    Abstract: BDY57
    Text: BDY57BDY58 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current


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    BDY57 BDY58 bdy58 BDY57 PDF

    Untitled

    Abstract: No abstract text available
    Text: , One. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BDY57 DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEo(sus)= SOV(Min) • High Power Dissipation • Low Collector Saturation Voltage


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    BDY57 10MHz PDF

    BDY58

    Abstract: BDY57 Comset
    Text: BDY57BDY58 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current


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    BDY57 BDY58 BDY58 BDY57 Comset PDF

    BDY57

    Abstract: No abstract text available
    Text: BDY57 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    BDY57 O204AA) 31-Jul-02 BDY57 PDF

    bd130

    Abstract: BDY57 BLX84 BD142 BLx18 13 6 npn BDY20 BDY29 BDY94 BLX36
    Text: IC VCEO Device Cont. Polarity MAX Type MAX VOLTS AMPS BD130 NPN 15.0 60 BD142 NPN 15.0 45 BDY20 NPN 15.0 60 BDY29 NPN 30.0 75 BDY37 NPN 16.0 140 BDY38 NPN 6.0 40 BDY39 NPN 15.0 60 BDY55 NPN 15.0 60 BDY56 NPN 15.0 120 BDY57 NPN 25.0 80 BDY58 NPN 25.0 125


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    BD130 BD142 BDY20 BDY29 BDY37 BDY38 BDY39 BDY55 BDY56 BDY57 BLX84 BLx18 13 6 npn BDY94 BLX36 PDF

    SKC25K85

    Abstract: ST29045 2SD319 P1743-0630 BUW18 SDT9701 1561-0810
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD Max hFE *T ON) Min (HZ) ICBO t0N r Max Max (A) (s) Max (Ohms) (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . -5 -10 -15 -20 . . -25


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    GSRU20040 2SC2903 SKC25B70 SKC25B75 SKC25K85 2SC3988 2SC3455 2SC3989 BUP38 ST29045 2SD319 P1743-0630 BUW18 SDT9701 1561-0810 PDF

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 PDF

    DK53

    Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
    Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


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    2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513 PDF

    PT9847

    Abstract: ESM752A ESM952 sm2160 ESM952A PT9785 esm752 idd1313
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on PD Max hFE fT ON) Min (HZ) Max toN Max (A) (s) 'CBO r (CE)sat Toper Max (Ohms) Max (°C) Package Style ~ Devices 20 Watts or More, (Cont'd) 5 10 PT8854 PT8854A S G S F 6 6 2 (A)


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    PT8854 PT8854A SGSF663 ESM752 ESM952 ESM752A ESM952A BDY57A BDY58R PT9847 sm2160 PT9785 idd1313 PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


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    2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    bdy58

    Abstract: BDY57
    Text: ¿57 SGS-THOMSON ÜOTMÛS BDY57 BDY58 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTORS D E S C R IP T IO N The BDY57 and BDY58 are silicon multiepitaxial planar NPN transistors in Jedec TO-3 metal case, intended for use in switching and linear applications


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    BDY57 BDY58 BDY58 1988ter PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 7 ^5 3 7 005fii4fl5 T tm r" P 3 3 - 1 5 BDY57 BDY58 SGS-THOMSON iLiCTËMOtSS HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTORS S Q S-THOMSO DESCRIPTION The BDY57 and BDY58 are silicon multiepitaxial planar NPN transistors in Jedec TO-3 metal case, intended for use in switching and linear applications


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    005fii4fl5 BDY57 BDY58 BDY57 BDY58 PDF

    Untitled

    Abstract: No abstract text available
    Text: CRIMSON SE MICO ND UC TO R INC TT D eTJI e SIMD^ b 0DQ0337 4 • . 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 00 3 3 7 ! D ' ' f ' 3 3 - 0/ ! EPITAXIAL PLANAR - TO -66 NPN PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428


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    0DQ0337 BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 N5427 2N5428 PDF

    axial zener diodes marking code c3v6

    Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
    Text: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.


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    BR805A BR81A BR82A BR84A BR86A BR88A BR91A BR92A BR94A BR96A axial zener diodes marking code c3v6 H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan
    Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    PDF

    mje520

    Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
    Text: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen­ hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50


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    BD433 MJE200 MJE520 BD435 2N4921 2IM5190 2IM6037 MJE521 MJE180 BD135 SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP PDF

    1n52408

    Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
    Text: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which


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    301PT1115 302PT1115 303PT1115 311PT1110 312PTI110 319PTI110 327PTI110 351PT1115 353PT1115 1n52408 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC PDF

    BSW68

    Abstract: 2N3055 mj2955 50004 2N3440 ST bdy90 BSV64 BSW68A
    Text: MilitaryAerospace Division Military-Aerospace Division C EC C 5 0 0 0 0 qualified m etal case transistors A p p ro val no M /0 1 0 3 /C E C C /U K available on r e q u e s t w ith options for additional screening to e ith e r se q u e n c e A, B, C or D.


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    T0220SM 0220M BSS44 BSV64 BSW66A BSW67A BSW68 BSW68A BSX62 BSX63 2N3055 mj2955 50004 2N3440 ST bdy90 PDF

    JE350

    Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
    Text: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168


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    BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 JE350 je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55 PDF