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    Philips Semiconductors BSW66A

    Bipolar Junction Transistor, NPN Type, TO-39
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    Quest Components BSW66A 6
    • 1 $15
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    NXP Semiconductors BSW66A

    Bipolar Junction Transistor, NPN Type, TO-39
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    Quest Components BSW66A 2
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    Central Semiconductor Corp BSW66A

    BIPOLAR NPN DEVICE IN A HERMETICALLY SEALED TO39 METAL PACKAGE Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin
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    ComSIT USA BSW66A 278
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    BSW66A Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BSW66A Philips Semiconductors Programmable logic arrays (16 x 48 x 8) - Pol=NPN / Pkg=TO39 / Vceo=100 / Ic=2 / Hfe=30min / fT(Hz)=130M / Pwr(W)=5 Original PDF
    BSW66A Philips Semiconductors NPN switching transistors - Pol=NPN / Pkg=TO39 / Vceo=100 / Ic=2 / Hfe=30min / fT(Hz)=130M / Pwr(W)=5 Original PDF
    BSW66A Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=100 / Ic=2 / Hfe=30min / fT(Hz)=130M / Pwr(W)=5 Original PDF
    BSW66A Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BSW66A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSW66A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSW66A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BSW66A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BSW66A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    BSW66A Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: BSW66A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


    Original     		PDF BSW66A O205AD) 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: BSW66A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


    Original     		PDF BSW66A O205AD) 19-Jun-02

    data sheet BSW67A

    Abstract: BSW67A BP317 BSW66A BSW68A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSW66A; BSW67A; BSW68A NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 05 Philips Semiconductors Product specification NPN switching transistors


    Original     		PDF M3D111 BSW66A; BSW67A; BSW68A MAM317 SCA54 117047/00/02/pp8 data sheet BSW67A BSW67A BP317 BSW66A BSW68A

    BSW66A

    Abstract: No abstract text available
    Text: BSW66A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


    Original     		PDF BSW66A O205AD) 1-Aug-02 BSW66A

    BSW66A

    Abstract: No abstract text available
    Text: Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base VCBO 100.0 V NO. BSW66A Voltage, Collector to Emitter (VCE) 100.0 V TYPE NPN Voltage, Emitter to Base (VEBO) 6.0 V empty empty Collector Current (IC) 2.0 A empty empty A CASE TO-39 5.0


    Original     		PDF BSW66A BSW66A

    bu808 equivalent

    Abstract: bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143
    Text: STI Type: 2N3778 Notes: Polarity: PNP Power Dissipation: 5.0 VCBO: 40 VCER: ICBO: ICBO ua: hFE: 10 hFE A: .2 VCE: VBE: IC A: COB: fT: 1.0 Case Style: TO-205AD/TO-39 Industry Type: 2N3778 STI Type: 2N3792 Notes: *BVCBO Polarity: PNP Power Dissipation: 150 Tj: 200


    Original     		PDF 2N3778 O-205AD/TO-39 2N3792 O-204AA/TO-3 2N3791 2N3798 bu808 equivalent bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143

    2A 40V NPN

    Abstract: 150v 3A pnp BSW68A bu326
    Text: Search Results Part number search for devices beginning "BSS71" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BSS71 NPN TO18 200V 0.5A 40 250 10/30m 50MHz


    Original     		PDF BSS71" BSS71 BSS71CSM BSS71CSM-JQR-B BSS71DCSM BSS71DCSM-JQR-B 10/30m 2A 40V NPN 150v 3A pnp BSW68A bu326

    2N2219 transistor

    Abstract: IC 744 BSW68A BDX36 2N2219 2N2219A BFX34 BFX85 BSW66A BSW67A
    Text: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN MEDIUM-POWER SWITCHING TRANSISTORS TYPE NUMBER 2N2219 PACKAGE TO-39 VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) toff max. (ns) 30 800


    Original     		PDF 2N2219 2N2219A BFX85 BSW66A BSW67A BSW68A BSX32 BSX59 BSX61 2N4036 2N2219 transistor IC 744 BSW68A BDX36 2N2219 2N2219A BFX34 BFX85 BSW66A BSW67A

    BC107 equivalent transistors

    Abstract: 2n5401 equivalent BC557 equivalent 2N2907 equivalent 2n2905 replacement bc327 equivalent bc237 equivalent MPSa06 equivalent equivalent for BC337 bc327 replacement
    Text: Philips Semiconductors Small-signal Transistors DISCONTINUED TYPE Replacement list REASON FOR DELETION REMARKS 2N1613 Discontinued 2N1711 Discontinued 2N1893 Discontinued 2N2219 Discontinued 2N2219A Discontinued 2N2222/A Discontinued 2N2369/A Discontinued


    Original     		PDF 2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222/A 2N2369/A 2N2484 2N2905 2N2905A BC107 equivalent transistors 2n5401 equivalent BC557 equivalent 2N2907 equivalent 2n2905 replacement bc327 equivalent bc237 equivalent MPSa06 equivalent equivalent for BC337 bc327 replacement

    BSW68A 1990

    Abstract: bsw68a
    Text: N AMER PHILIPS/DISCRETE LTE D • bbS3^31 00273^1 bSfl B A P X l BSW66A to 68A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK REFERENCE DATA BSW66A BSW67A BSW68A VCBO


    OCR Scan     		PDF BSW66A BSW67A BSW68A BY206 BSW68A 1990 bsw68a

    BY206

    Abstract: 77655 BSW67A BSW68A 68A diode BY206 diode BSW66A 82S2 Silicon Epitaxial Planar Transistor philips k 68a
    Text: N AMER PHILIPS/DISCRETE L'ÌE D • 1^53^31 0027ÖT1 bSß B A P X BSW66A to 68A I SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors prim arily intended fo r general purpose industrial and switching applications. Q UICK REFERENCE D ATA BSW66A BSW67A BSW68A


    OCR Scan     		PDF BSW66A BSW67A BSW68A 500mA BAV10 BY206 7Z776S1 77655 BSW68A 68A diode BY206 diode 82S2 Silicon Epitaxial Planar Transistor philips k 68a

    BSW68A

    Abstract: BSW67A BSW66A
    Text: Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A FEATURES PINNING • High current max. 1 A PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General purpose switching and amplification


    OCR Scan     		PDF BSW66A; BSW67A; BSW68A MAM317 BSW66A BSW67A BSW68A BSW67A BSW66A

    BY206

    Abstract: BSW68A k 68a BSW67A BSW66A Silicon Epitaxial Planar Transistor philips silicon planar epitaxial transistors Philips 1990 LG 68A
    Text: BSW66A to 68A PHILIPS INTERNATIONAL 5bE D m 711002b DD4237Ö bS4 HIPHIN SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK R EFER EN C E DATA BSW66A BSW67A BSW68A Collector-base voltage open emitter


    OCR Scan     		PDF BSW66A 711002b DD4237Ã BSW67A BSW68A 711Qa2b Q0M53B5 BY206 k 68a Silicon Epitaxial Planar Transistor philips silicon planar epitaxial transistors Philips 1990 LG 68A

    BSW66A

    Abstract: bsw67a BSW63A bsw68a
    Text: Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A FEATURES PINNING • High current max. 1 A PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General purpose switching and amplification


    OCR Scan     		PDF BSW66A; BSW67A; BSW68A BSW66A BSW67A BSW68e BSW63A bsw68a

    2SC114 transistor

    Abstract: transistor 2SC114 2SC114 BSS43 D28A9 FZJ 101 FZJ 131 VX3866 MHT5001 usaf516es047m
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2SC114 transistor transistor 2SC114 2SC114 BSS43 D28A9 FZJ 101 FZJ 131 VX3866 MHT5001 usaf516es047m

    BDV56

    Abstract: BDV57 2N3055 TIPL777 BUS11A cv9936 BUX11 2N6033
    Text: un itti IMI Semelab Mil / Aerospace Division CECC 5 0 0 0 0 QUALIFIED PRODUCT SEM ELAB has one of the largest ranges of C E C C approved power products in Europe. These products have undergone approval to support both new application requirem ents and also existing and “old”


    OCR Scan     		PDF 2N2218 2N2218A 2N2219 2N2219A 2N2913 2N2914 2N2915 2N2916 2N2917 2N2918 BDV56 BDV57 2N3055 TIPL777 BUS11A cv9936 BUX11 2N6033

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    BFX36

    Abstract: 2N3904DCSM 2N3904D 2N3680 BFT39 2N2222ADCSM BFX11 BFY84 BLY11 BFT40
    Text: 37E D SEMELAB LTD 31331B7 OOOODTb fl jl S E M E L A B MANUFACTURING! • c BS/CECC Polarity Package v CEO cont h F E BFT37 BFT39 BFT40 BFT41 BFT57 BS-0 BS-0 BS-0 BS-0 BS-0 PNP NPN NPN NPN NPN T039 T039 T039 T039 T018 100 80 60 50 160 5 1 1 1 0.2 50-200 250 typ


    OCR Scan     		PDF fll331fl7 BFT37 BFT39 BFT40 BFT41 BFT57 BFT58 BFT59 BFT60 BFT61 BFX36 2N3904DCSM 2N3904D 2N3680 2N2222ADCSM BFX11 BFY84 BLY11

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    2n2222 h 331 transistors

    Abstract: 2N2222A 331 2n2222 -331 transistors PNP 2n3906 331 2n2222 - 331 jf494 2n2222 2n5401 2n5551 BC337 2n2222 331 transistors PNP 2n4403 331
    Text: Philips Semiconductors Leaded transistors Selection guide GENERAL PURPOSE APPLICATIONS h re TYPE NUMBER VcEO V •c (mA) *T Plot (mW) min. max. typi (MHz) PAGE NPN BC107 45 100 300 125 500 300 87 BC108 20 100 300 125 900 300 87 BC109 20 100 300 240 900 300


    OCR Scan     		PDF BC107 BC108 BC109 BC140 BC141 BC337 BC337A BC338 BC368 BC375 2n2222 h 331 transistors 2N2222A 331 2n2222 -331 transistors PNP 2n3906 331 2n2222 - 331 jf494 2n2222 2n5401 2n5551 2n2222 331 transistors PNP 2n4403 331

    BU104

    Abstract: BSX21 BU103 8SS44
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o Description BS250CSM4 8SS44 BSS44 CECC BSS50 BSS51 BSS52 BSS60 BSS61 BSS62 BSS71 BSS72 BSS73 BSS74 BSS74R BSS75 BSS76 BSS77 BSS78 BSV15 BSV16 BSV17 BSV60 BSV64 BSV64 CECC BSV64-SM BSV91 BSW66 BSW66CECC


    OCR Scan     		PDF BS250CSM4 8SS44 BSS44 BSS50 BSS51 BSS52 BSS60 BSS61 BSS62 BSS71 BU104 BSX21 BU103

    transistor 2SC114

    Abstract: transistor BD400 BD109 2SC114 transistor transistor t08 usaf516es047m 2SC114 2SD155 L transistor 2Sd154 usaf517es060m
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. t * - k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C


    OCR Scan     		PDF NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 transistor 2SC114 transistor BD400 BD109 2SC114 transistor transistor t08 usaf516es047m 2SC114 2SD155 L transistor 2Sd154 usaf517es060m

    75n07

    Abstract: BD106 oms 450 2SC22 2N2306 usaf516es047m bdy15 2N5925 2SC115 M06G
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. 75n07 BD106 oms 450 2SC22 2N2306 usaf516es047m bdy15 2N5925 2SC115 M06G

    2SC114

    Abstract: transistor 2SC114 t056 2SC114 transistor transistor t08 TRANSISTOR 2sc107 TQ59A transistor bdy88 BDY88 2SC109
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2SC114 transistor 2SC114 t056 2SC114 transistor transistor t08 TRANSISTOR 2sc107 TQ59A transistor bdy88 BDY88 2SC109