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    BDY55 Price and Stock

    Continental Device India Ltd TBDY55

    Transistor: NPN; bipolar; 60V; 15A; 117W; TO3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME TBDY55 387 1
    • 1 $0.72
    • 10 $0.65
    • 100 $0.58
    • 1000 $0.58
    • 10000 $0.58
    Buy Now

    HARTING Technology Group BDY55

    INSTOCK
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    Chip 1 Exchange BDY55 55
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    BDY55 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDY55 Comset Semiconductors NPN SILICON TRANSISTOR, DIFFUSED MESA Original PDF
    BDY55 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-70 / fT(Hz)=10M / Pwr(W)=117 Original PDF
    BDY55 Continental Device India TO-3 Power Package Transistors Scan PDF
    BDY55 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    BDY55 Continental Device India TO-3 Power Package Transistors Scan PDF
    BDY55 General Electric High-power high-current high-speed silicon N-P-N planar transistor. 100V, 117W. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-70 / fT(Hz)=10M / Pwr(W)=117 Scan PDF
    BDY55 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDY55 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDY55 Unknown Transistor Replacements Scan PDF
    BDY55 Unknown Cross Reference Datasheet Scan PDF
    BDY55 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BDY55 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BDY55 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDY55 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDY55 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDY55 SGS-Thomson Transistor Datasheet Scan PDF
    BDY55 Solitron Devices Pro Electron Power Transistors Scan PDF
    BDY55 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDY55 Thomson-CSF Condensed Data Book 1977 Scan PDF
    BDY55 Thomson-CSF Power Transistor Data Book 1975 Scan PDF

    BDY55 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BDY55

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification BDY55 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·LF large signal power amplification. PINNING See Fig.2 PIN DESCRIPTION 1 Base


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    BDY55 10MHz BDY55 PDF

    Untitled

    Abstract: No abstract text available
    Text: BDY55X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    BDY55X O204AA) 18-Jun-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BDY55 Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • DC Current Gain: hFE=20-70@lc = 4A • Collector-Emitter Saturation Voltage:VCE(sa,)=1.1 V(Max)@l c = 4A


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    BDY55 10MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: BDY55 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    BDY55 O204AA) 16-Jul-02 PDF

    BDY55

    Abstract: No abstract text available
    Text: BDY55 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    BDY55 O204AA) 31-Jul-02 BDY55 PDF

    BDY55

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification BDY55 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High current capability ・Fast switching speed APPLICATIONS ・LF large signal power amplification. PINNING See Fig.2 PIN DESCRIPTION 1


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    BDY55 10MHz BDY55 PDF

    BDY56

    Abstract: VCE-150 BDY55 Comset
    Text: BDY55BDY56 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current


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    BDY55 BDY56 BDY56 VCE-150 BDY55 Comset PDF

    Untitled

    Abstract: No abstract text available
    Text: BDY55X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    BDY55X O204AA) 16-Jul-02 PDF

    BDY55X

    Abstract: No abstract text available
    Text: BDY55X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    BDY55X O204AA) 31-Jul-02 BDY55X PDF

    Untitled

    Abstract: No abstract text available
    Text: BDY55 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    BDY55 O204AA) 18-Jun-02 PDF

    bd130

    Abstract: BDY57 BLX84 BD142 BLx18 13 6 npn BDY20 BDY29 BDY94 BLX36
    Text: IC VCEO Device Cont. Polarity MAX Type MAX VOLTS AMPS BD130 NPN 15.0 60 BD142 NPN 15.0 45 BDY20 NPN 15.0 60 BDY29 NPN 30.0 75 BDY37 NPN 16.0 140 BDY38 NPN 6.0 40 BDY39 NPN 15.0 60 BDY55 NPN 15.0 60 BDY56 NPN 15.0 120 BDY57 NPN 25.0 80 BDY58 NPN 25.0 125


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    BD130 BD142 BDY20 BDY29 BDY37 BDY38 BDY39 BDY55 BDY56 BDY57 BLX84 BLx18 13 6 npn BDY94 BLX36 PDF

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 PDF

    BDY38

    Abstract: 2N3055HV BDY20 BU326A 2N3055 bu326 2N3773 2N4347 2N6253 2N6257
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-3 Metal Can Package 3 All dimensions are in mm. PIN CONFIGURATION 1. BASE 2. EMITTER 3. COLLECTOR 2 1 TO-3 Power Package Transistors NPN Maximum Ratings Type No.


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    2N3055 BDX18 CDP055 MJ2955 BDY38 2N3055HV BDY20 BU326A 2N3055 bu326 2N3773 2N4347 2N6253 2N6257 PDF

    bdy56

    Abstract: max6056
    Text: BDY55, BDY56 BDY55, 56 NPN POWER TRANSISTORS Switching and Amplifier Circuits in Industrial and Commercial Applications DIM A B C D E F G H J K L M MIN MAX 39,37 22,22 8,50 6,35 1.09 0,96 1,77 29,90 30,4 10,69 11,18 5,20 5,72 16,64 17,15 11,15 12,25 26,67


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    BDY55, BDY56 350ns; bdy56 max6056 PDF

    RCA-BDY55

    Abstract: BDY56 RCA 17564 BDY55
    Text: G E S OL I» ST ATE 3875081 DE |3fl7SDfll 0 D 1 7 S b 4 b QÌ G E SOLID STATE 01E 17564 D -Pro Electron Power Transistors File Number 1215 BDY55, BDY56 High-Current, High-Power, High-Speed


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    DD175L BDY55, BDY56 RCA-BDY55 BDY56 3Z249RI 92LS-U6Â 92LS-M6SR2 RCA 17564 BDY55 PDF

    BDY77

    Abstract: BFR99 BDY79 BDY58B BDY61 BDY71 BFQ36 BDY45 BDY54 BDY55
    Text: 4ÖE ì> m 0133167 DGGG450 4 T Ì SEMELAB ISMLB SEMELAB LTD T.Ay.a , BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Num ber BDY45 BDY46 BI1Y47 BDY54 BDY55 BDY56 BDY57 BDY58 BDY58A BDY58B BDY58C BDY60 BÜY61 BDY62 BDY71 BDY72 BDY73 BDY74


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    BDY45 20min DDY46 BDY54 BDY55 BDY56 BDY57 BDY58 BDY77 BFR99 BDY79 BDY58B BDY61 BDY71 BFQ36 PDF

    bdy56

    Abstract: No abstract text available
    Text: File Num ber 1215 BDY55, BDY56 HARRIS SEMICOND SECTOR 5bE J> m M3D2271 GQ4D7Q3 Oflb HAS High-Current, High-Power, High-Speed Silicon N-P-N Planar Transistors Devices for Switching and Amplifier Circuits in Industrial and Commercial Applications Features: • Maximum operating area curves for dc and pulse operation


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    BDY55, BDY56 M3D2271 92LS-I464 bdy56 PDF

    BDV25

    Abstract: BDY25B BDY38 BDY96
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BDV25 BDY25A BDY25B BDY25C BDY26 BDY26B BDY26C BDY27 BDY27AS BDY27B BDY27C BDY27CX BDY28 BDY28B BDY28C BDY29 BDY37 BDY38 BDY39 BDY42 BDY43 BDY44 BDY45 BDY46 BDY47 BDY54 BDY55 BDY55 CECC BDY56 BDY56 CECC


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    BDV25 BDY25A BDY25B BDY25C BDY26 BDY26B BDY26C BDY27 BDY27AS BDY27B BDY38 BDY96 PDF

    2n3053A complementary

    Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
    Text: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697


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    a00S72b 2N2102 2N4036 120MHz 2N697 2N1613 2N3053 2N2270 T0205AD/ 2N3053A 2n3053A complementary 40362 BUX40A 40319 2n4314 2N1893 PDF

    BDY20

    Abstract: BU208A BU608 2SD870 2S01168 2S0200 BDY38 BU208 2SC1942 2SD1168
    Text: TO-3 Power Package Transistors NPN Max mum F atings Type No. V CBO V CEC V E0C (V) Min (V) Min (V) Min 2SC1942 1500 2SD 1168 1500 2SD 1168P 1500 800 Electrical Characteristics (Ta=25‘C, Unless Otherwise Specified) PD <W) t (A) @Tc=25° 'c a o (MA) V CB


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    2SC1942 2SD1168 2SD1168P 2SD1168Q 2SD200 2SD870 2SD871 BU205 BU207 BU208 BDY20 BU208A BU608 2S01168 2S0200 BDY38 BU208 PDF

    BDV56

    Abstract: BDV57 2N3055 TIPL777 BUS11A cv9936 BUX11 2N6033
    Text: un itti IMI Semelab Mil / Aerospace Division CECC 5 0 0 0 0 QUALIFIED PRODUCT SEM ELAB has one of the largest ranges of C E C C approved power products in Europe. These products have undergone approval to support both new application requirem ents and also existing and “old”


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    2N2218 2N2218A 2N2219 2N2219A 2N2913 2N2914 2N2915 2N2916 2N2917 2N2918 BDV56 BDV57 2N3055 TIPL777 BUS11A cv9936 BUX11 2N6033 PDF

    axial zener diodes marking code c3v6

    Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
    Text: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.


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    BR805A BR81A BR82A BR84A BR86A BR88A BR91A BR92A BR94A BR96A axial zener diodes marking code c3v6 H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan
    Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    BU2080

    Abstract: No abstract text available
    Text: TO-3 Power Package Transistors NPN Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Maximum Ratings Type No. V CBO V C E0 (V) Min (V) Min 1500 800 2SD1168P Pd 'c VebO (W) (A) (V) Min 0Tc=25°c 5 50 !cbo (PA) Max V CB @ (V) hpE 1000 1500 9


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    2SD1168P 2SD1168Q 2SD200 2SD83 BU326 BU326A BU608 CDN055 BU2080 PDF