BUL54AFI
Abstract: transistor 500v 0.5a NPN Transistor VCEO 1000V
Text: SEME BUL54AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 2.54 2.54
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BUL54AFI
100mA
BUL54AFI
transistor 500v 0.5a
NPN Transistor VCEO 1000V
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Untitled
Abstract: No abstract text available
Text: SEME BUL54A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3
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BUL54A
100mA
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BUL54ASMD
Abstract: NPN Transistor VCEO 1000V
Text: BUL54ASMD ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 3 .6 0 0 .1 4 2 M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 )
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BUL54ASMD
100mA
10MHz
300ms
BUL54ASMD
NPN Transistor VCEO 1000V
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PDF
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Untitled
Abstract: No abstract text available
Text: SEME BUL54AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 2.54 2.54
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BUL54AFI
100mA
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TO5 package
Abstract: BUL54A-TO5
Text: BUL54A-TO5 Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)
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BUL54A-TO5
O205AA)
20-Aug-02
TO5 package
BUL54A-TO5
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PDF
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NPN Transistor VCEO 1000V
Abstract: No abstract text available
Text: SEME BUL54A-T257F LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 4.50 4.81 10.40 10.80 3.50 Dia. 3.70 Designed for use in electronic ballast applications 10.50 10.67 16.30 16.70 3.0
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BUL54A-T257F
100mA
300ms
NPN Transistor VCEO 1000V
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BUL54A
Abstract: NPN Transistor VCEO 1000V
Text: SEME BUL54A–SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 11.5 0.25 3.5 1 3 3.0 9.0 1.5 15.8 4.6 2.0 3.5 2 8.5 FEATURES TO220 Ceramic Surface Mount Package Pad 1 – Base Pad 2 – Collector
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BUL54A
500mA
100mA
10MHz
NPN Transistor VCEO 1000V
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PDF
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NPN Transistor VCEO 1000V
Abstract: BUL54A-TO5
Text: SEME BUL54A-TO5 LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 8.51 0.34 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Designed for use in electronic ballast applications 6.10 (0.240) 6.60 (0.260)
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BUL54A-TO5
O-205AA)
NPN Transistor VCEO 1000V
BUL54A-TO5
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PDF
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Untitled
Abstract: No abstract text available
Text: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and
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BUL54A-TO5
O-205AA)
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NPN Transistor VCEO 1000V
Abstract: BUL54A transistor 500v 0.5a
Text: SEME BUL54A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3
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BUL54A
100mA
NPN Transistor VCEO 1000V
BUL54A
transistor 500v 0.5a
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PDF
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Untitled
Abstract: No abstract text available
Text: BUL54ASMD ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 3 .6 0 0 .1 4 2 M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 )
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BUL54ASMD
100mA
10MHz
300ms
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PDF
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transistor VCEO 1000V
Abstract: NPN Transistor VCEO 1000V BUL54A-TO5 LE17
Text: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and
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BUL54A-TO5
O-205AA)
transistor VCEO 1000V
NPN Transistor VCEO 1000V
BUL54A-TO5
LE17
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PDF
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BUL54AR
Abstract: BUL54 20MHZ npn 500v BUL54A-T257
Text: Search Results Part number search for devices beginning "BUL54" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BUL54A NPN TO220 500V 4A 12 - 5/0.5 20MHz
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BUL54"
BUL54A
BUL54AFI
BUL54AR
BUL54ASMD
BUL54A-T126R
BUL54A-T257
BUL54A-TO126
BUL54A-TO5
BUL54B
BUL54
20MHZ
npn 500v
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PDF
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2N3810 LCC
Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
Text: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
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FM36235
M/0103/CECC/UK
1360/M
VQC-03-003050
VQC-03-003049
U3158
2M8S02
2N3810 LCC
2N2222A LCC1
ESCC 5202-001
MCA3201/2B
ESCC 5204/002
bul54ah
mp2835
ESCC 5201-002
silicon carbide JFET
2n918 die
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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Untitled
Abstract: No abstract text available
Text: lili = & = m i S E M E BUL54A-SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm •SEMEFAB DESIGNED AND DIFFUSED DIE *— _2.0 3.5 r ^ * ►n .o*— ! - 111 •HIGH VOLTAGE 0.25 3.5
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OCR Scan
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BUL54A-SM
T0220
100mA
10MHz
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PDF
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MIL npn high voltage transistor 1000V
Abstract: No abstract text available
Text: Illl = lt = Illl SEME BUL54A-SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 'SEMEFAB DESIGNED AND DIFFUSED DIE :-► r4- •HIGH VOLTAGE 2.0 3.5 ► < 3.5 • FAST SWITCHING tf = 40ns
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OCR Scan
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BUL54A-SM
T0220
MIL npn high voltage transistor 1000V
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PDF
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Semefab
Abstract: MIL npn high voltage transistor 1000V
Text: Mil =X= mi SEME BUL54A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 4.5 10.2 f*-► , 1.3 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE
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OCR Scan
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BUL54A
T0220
100mA
Semefab
MIL npn high voltage transistor 1000V
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PDF
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Untitled
Abstract: No abstract text available
Text: INI INI SEME BUL54AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE 1 2 3 • HIGH VOLTAGE
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OCR Scan
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BUL54AFI
100mA
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PDF
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T0251
Abstract: T0-251
Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUL47A BUL47B BUL48A BUL48B BUL49A BUL49B BUL50A BUL50B BUL51A BUL51B BUL52A BUL52AFI BUL52AH BUL52B BUL52BFI BUL52BL BUL53A BUL53B BUL54A BUL54B BUL54BFI BUL55A BUL55B BUL56A BUL56B BUL57A BUL58A
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OCR Scan
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BUL47A
BUL47B
BUL48A
BUL48B
BUL49A
BUL49B
BUL50A
BUL50B
BUL51A
BUL51B
T0251
T0-251
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PDF
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2n3866s
Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
Text: M il / Aerospace Division Sem elab HERMETIC SURFACE MOUNT PACKAGES SEMELAB offers seven ceramic package styles intended for use in Space Vehicles, Aircraft and other critical applications all intended for Surface Mount Applications. SOT23 HERMETIC CERAMIC SURFACE MOUNT PACKAGE LCC1
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OCR Scan
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BYV34-300SM
BYV34-400ASM
BYV34--
400RSM
400SM
BYV34-500ASM
BYV34-500RSM
BYV34-500SM
LM137-SM
2n3866s
DIODE 69a LM
2N3904CSM
2N3904DCSM
2N3904D
LM7805sm
2N3055E
LM7808S
LCC3 weight
bfy82
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PDF
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IRF5402
Abstract: IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342
Text: MilitaryAerospace Division M ilitary-Aerospace Division ceram ic surface m ount devices and scree ned to m e e t th e m ost severe T 0 2 2 0 c e r a m ic su rface m o u n t devices A surface m o u n t r e p l a c e m e n t for th e p op ular T 0 2 2 0 M e t a l and T 0 2 5 7 package, the T 0 2 2 0 S M
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OCR Scan
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BZX55C5V6CSM
T0220SM
2N2222CSM
2N2907CSM
BCW33CSM
BZX55C7V5CSM
2N2369ACSM
2N3209CSM
3250C
BCY59CSM
IRF5402
IRFN540
IRFN630
IRFN530
IRFN640
8YV32-5
W06C
2205-M
IRFN733
IRFn342
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transistor s07
Abstract: G-377 BUL55A BUL55B G177 G277A G377A G577A G677A G877A
Text: Ö1331Ö7 G D G ü m ? 4flE » ISMLB 177 SEMEFABI SEMELAB G177 chip family •ss-07 The G177 chip family is an NPN bipolar multiepitaxial planar transistor using SEMEFAB’S new ADVANCED DISTRIBUTED BASE TECHNOLOGY for improved performance over full temperature
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OCR Scan
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-90x90
-S50wm
PA12x18mils
G577A
G677A
G377A
G277A
G977A
G877A
G877DE
transistor s07
G-377
BUL55A
BUL55B
G177
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PDF
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bup43
Abstract: No abstract text available
Text: IMI i ^= IDI Sem elab Power M anagem ent Division BI-POLAR POWER TRANSISTORS PRIME SALES TYPES R ei. P ackage v ce/ P a rt No. O p tio n s P o la rity V CEO BUL46A / NPN BUL46B / BUL47A BUL47B PD Type h FE / ' c 500 le 7 10min 4/8 20M 200 T O -3 NPN 400 25
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BUL46A
BUL46B
BUL47A
BUL47B
BUL48A
BUL48B
BUL49A
BUL49B
BUL50A
BUL50B
bup43
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