Untitled
Abstract: No abstract text available
Text: BUL46B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUL46B
O204AA)
16-Jul-02
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BUL46B
Abstract: No abstract text available
Text: BUL46B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUL46B
O204AA)
31-Jul-02
BUL46B
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BUL46B
Abstract: No abstract text available
Text: BUL46B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUL46B
O204AA)
18-Jun-02
BUL46B
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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bup43
Abstract: No abstract text available
Text: IMI i ^= IDI Sem elab Power M anagem ent Division BI-POLAR POWER TRANSISTORS PRIME SALES TYPES R ei. P ackage v ce/ P a rt No. O p tio n s P o la rity V CEO BUL46A / NPN BUL46B / BUL47A BUL47B PD Type h FE / ' c 500 le 7 10min 4/8 20M 200 T O -3 NPN 400 25
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BUL46A
BUL46B
BUL47A
BUL47B
BUL48A
BUL48B
BUL49A
BUL49B
BUL50A
BUL50B
bup43
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g171
Abstract: BUL47B semefab G971A BUL46A BUL46B BUL47A G271A G871A G871DE
Text: 4AE D • 6133167 □□ □□ 41 4 SENELAB LTD M DISTRIBUTED BASE TECHNOLOGY DIE DESIGNED AND DIFFUSED BY SEMEFAB ' - G171 chip family The G 171 chip family is an NPN bipolar multiepitaxial planar transistor using SEMEFAB’S new ADVANCED DISTRIBUTED BASE TECHNOLOGY
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DQD0414
-275x275
-550/im
-20x48mils
-18x53
G271A
G971A
G871A
GS71DE
g171
BUL47B
semefab
BUL46A
BUL46B
BUL47A
G871DE
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BU104
Abstract: BSX21 BU103 8SS44
Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o Description BS250CSM4 8SS44 BSS44 CECC BSS50 BSS51 BSS52 BSS60 BSS61 BSS62 BSS71 BSS72 BSS73 BSS74 BSS74R BSS75 BSS76 BSS77 BSS78 BSV15 BSV16 BSV17 BSV60 BSV64 BSV64 CECC BSV64-SM BSV91 BSW66 BSW66CECC
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BS250CSM4
8SS44
BSS44
BSS50
BSS51
BSS52
BSS60
BSS61
BSS62
BSS71
BU104
BSX21
BU103
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Untitled
Abstract: No abstract text available
Text: bOE D • 6133167 00DD5GM 4TT ■ SMLB SEHELAB PLC SEMELAB "T-33-J5 BU L46B MECHANICAL DATA ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR Dimensions in mm • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE VCBO= 800V
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00DD5GM
T33-J
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bup4
Abstract: bup57 bup44
Text: Power Management Division Power Management Division bipolar power transistors Non standard types B ip o la r p o w e r tr a n s is to r s S e m e la b m a n u f a c tu r e s an e x te n s iv e range of W e p r o d u c e m a n y c u s t o m e r - s p e c i f i c p a rts ,
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BUP52
BUP54
T0247
BUP56
BUP59
bup4
bup57
bup44
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