Untitled
Abstract: No abstract text available
Text: SEME BUL52BFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85 FEATURES
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BUL52BFI
100mA
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BUL52BFI
Abstract: transistor 800V 1A transistor 400v 8a to220
Text: SEME BUL52BFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85 FEATURES
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BUL52BFI
100mA
BUL52BFI
transistor 800V 1A
transistor 400v 8a to220
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NPN 250W
Abstract: BUL50A-T247 NPN 400V 40A BUR13 BUL58
Text: Search Results Part number search for devices beginning "BUL47" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BUL47A NPN TO3 300V 40A 25 - 4/25 20MHz 200W
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BUL47"
BUL47A
BUL47B
20MHz
BUL50"
BUL50A
BUL50A-T247
BUL50B
10MHz
NPN 250W
NPN 400V 40A
BUR13
BUL58
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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T0251
Abstract: T0-251
Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUL47A BUL47B BUL48A BUL48B BUL49A BUL49B BUL50A BUL50B BUL51A BUL51B BUL52A BUL52AFI BUL52AH BUL52B BUL52BFI BUL52BL BUL53A BUL53B BUL54A BUL54B BUL54BFI BUL55A BUL55B BUL56A BUL56B BUL57A BUL58A
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BUL47A
BUL47B
BUL48A
BUL48B
BUL49A
BUL49B
BUL50A
BUL50B
BUL51A
BUL51B
T0251
T0-251
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Untitled
Abstract: No abstract text available
Text: IMI = fï= IMI SEME BUL52BFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm <* 10.2 *\ 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE
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BUL52BFI
T0220
100mA
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mje13009 equivalent
Abstract: MJEI3008 BUV46 equivalent buu26 ST MJE13007 mje13007 equivalent
Text: Power Management Division Power Management Division bipolar pow er transistors Sem ela b continually strives to offer improved specification bipolar transistors. One example the B U L 74 A MJE13 009 equivalent , is aimed at the power supply/lighting market. I t ’s ideal
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BUL74A
MJE13009
BUL36I
T022SGO
T0220
BUV46
MJE13004
BUL53A
mje13009 equivalent
MJEI3008
BUV46 equivalent
buu26
ST MJE13007
mje13007 equivalent
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