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    BUL53B Search Results

    BUL53B Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUL53B Semelab ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Original PDF
    BUL53B Semelab Bi-Polar Transistors (CECC and High Rel) & High Energy Scan PDF
    BUL53B-SM Semelab ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR Original PDF
    BUL53BSMD Semelab ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR Original PDF

    BUL53B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BUL53BSMD ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 4 .1 4 0 .1 6 3 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 )


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    BUL53BSMD 100ns) 100mA 300ms 10MHz PDF

    BUL53B

    Abstract: No abstract text available
    Text: SEME BUL53B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85


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    BUL53B BUL53B PDF

    vce 500v NPN Transistor

    Abstract: BUL53BSMD
    Text: BUL53BSMD ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 4 .1 4 0 .1 6 3 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 )


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    BUL53BSMD 100ns) 100mA 300ms 10MHz vce 500v NPN Transistor BUL53BSMD PDF

    Untitled

    Abstract: No abstract text available
    Text: SEME BUL53B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85


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    BUL53B PDF

    tf 115 250v 2a

    Abstract: BUL53B
    Text: BUL53B–SM SEME LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA 11.5 2.0 0.25 3.5 1 3.0 3 • FAST SWITCHING tf = 100ns 9.0 1.5 15.8 4.6 3.5 2 • HIGH ENERGY RATING FEATURES 8.5 TO220 Ceramic Surface Mount Package


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    BUL53BSM 100ns) 100mA 10MHz tf 115 250v 2a BUL53B PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


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    2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    LAB 250 LB

    Abstract: No abstract text available
    Text: Illl = & = Illl SEME BUL53B-SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA • CERAMIC SURFACE MOUNT PACKAGE :- ► , • FULL MIL/AEROSPACE TEMPERATURE RANGE 2.0 3.5 < ► 4— * 9'f <-


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    BUL53B-SM 100ns) T0220 100mA 100mA 10MHz LAB 250 LB PDF

    Untitled

    Abstract: No abstract text available
    Text: Mil = ^ = IN I BUL53B SEME LAB MECHANICAL DATA Dimensions in mm 4.5 10.2 , f*-► f*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE


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    BUL53B T0220 PDF

    T0251

    Abstract: T0-251
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUL47A BUL47B BUL48A BUL48B BUL49A BUL49B BUL50A BUL50B BUL51A BUL51B BUL52A BUL52AFI BUL52AH BUL52B BUL52BFI BUL52BL BUL53A BUL53B BUL54A BUL54B BUL54BFI BUL55A BUL55B BUL56A BUL56B BUL57A BUL58A


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    BUL47A BUL47B BUL48A BUL48B BUL49A BUL49B BUL50A BUL50B BUL51A BUL51B T0251 T0-251 PDF

    Untitled

    Abstract: No abstract text available
    Text: Illl Illl BUL53B-SM SEME LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 11 .fi • CERAMIC SURFACE MOUNT PACKAGE —*i 3.0 ri-H 0.25 • FULL MIL/AEROSPACE TEMPERATURE RANGE • SCREENING OPTIONS FOR MILITARY AND


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    BUL53B-SM 100ns) T0220 100mA D0D14Ã PDF

    2n3866s

    Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
    Text: M il / Aerospace Division Sem elab HERMETIC SURFACE MOUNT PACKAGES SEMELAB offers seven ceramic package styles intended for use in Space Vehicles, Aircraft and other critical applications all intended for Surface Mount Applications. SOT23 HERMETIC CERAMIC SURFACE MOUNT PACKAGE LCC1


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    BYV34-300SM BYV34-400ASM BYV34-- 400RSM 400SM BYV34-500ASM BYV34-500RSM BYV34-500SM LM137-SM 2n3866s DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82 PDF

    IRF5402

    Abstract: IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342
    Text: MilitaryAerospace Division M ilitary-Aerospace Division ceram ic surface m ount devices and scree ned to m e e t th e m ost severe T 0 2 2 0 c e r a m ic su rface m o u n t devices A surface m o u n t r e p l a c e m e n t for th e p op ular T 0 2 2 0 M e t a l and T 0 2 5 7 package, the T 0 2 2 0 S M


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    BZX55C5V6CSM T0220SM 2N2222CSM 2N2907CSM BCW33CSM BZX55C7V5CSM 2N2369ACSM 2N3209CSM 3250C BCY59CSM IRF5402 IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342 PDF

    BUL52A

    Abstract: SOT93 BUP43 BUP47 BUP49 BUP53 dd453 BUL50A BUL50B BUL51A
    Text: 4AE D • fll331fl7 0DDD4S3 IDA ■ SMLB SEMELAB LTD T-Z?-o BI-POLAR TRANSISTORS (CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code HR HR HR HR HR HR HR HR HR HR HR HR UR HR CECC CECC CECC REQ REQ HR HR HR HR CECC CECC CECC CECC Pol NPN NPN NPN NPN NPN


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    DD453 BUL50A S0T93 10min BUL50B T0220 BUL51A 30min DUL51B BUL52A SOT93 BUP43 BUP47 BUP49 BUP53 BUL50A BUL50B BUL51A PDF

    G675A

    Abstract: BUL53A BUL53B G175 G275A G375A G575A G875A G875DE G975A
    Text: 46E T> m 6 1 3 3 1 6 7 DDDDHlb 5 3 0 • S f l L B DIFFUSION SEMEFABI S E H E L A B DISTRIBUTED BASE TECHNOLOGY DIE DESIGNED AND DIFFUSED BY SEMEFAB "P G175 chip family J LTD * Z S 'V l The G 175 chip family is an NPN bipolar multiepitaxial planar transistor using SEMEFAB’S new


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    -126x126 -56x29mils G575A G67SA G375A G275A G975A G875A G875DE BUL53B G675A BUL53A G175 PDF

    bup4

    Abstract: bup57 bup44
    Text: Power Management Division Power Management Division bipolar power transistors Non standard types B ip o la r p o w e r tr a n s is to r s S e m e la b m a n u f a c tu r e s an e x te n s iv e range of W e p r o d u c e m a n y c u s t o m e r - s p e c i f i c p a rts ,


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    BUP52 BUP54 T0247 BUP56 BUP59 bup4 bup57 bup44 PDF