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Inventek Systems LLC ISM4343-WBU-L54U WIFI/BT COMBO MOD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ISM4343-WBU-L54U	Tray			1	1 $19.48 10 $14.142 100 $11.45225 1000 $10.25 10000 $10.25	Buy Now
Avnet Americas	ISM4343-WBU-L54U	Tray		12 Weeks	196	1 - 10 - 100 - 1000 $10.33201 10000 $9.84004	Buy Now
Mouser Electronics	ISM4343-WBU-L54U					1 - 10 - 100 - 1000 $10.25 10000 $10.25	Get Quote
Inventek Systems LLC ISM4343-WBU-L54C WIFI/BT COMBO MOD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ISM4343-WBU-L54C	Tray			1	1 $19.48 10 $14.142 100 $11.45225 1000 $10.25 10000 $10.25	Buy Now
Avnet Americas	ISM4343-WBU-L54C	Tray		12 Weeks	196	1 - 10 - 100 - 1000 $10.33201 10000 $9.84004	Buy Now
Mouser Electronics	ISM4343-WBU-L54C					1 - 10 - 100 - 1000 $10.25 10000 $10.25	Get Quote

BUL54 Datasheets (11)

Part	Manufacturer	Description	Datasheet Type	PDF
BUL54	Semelab	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR	Original	PDF
BUL54A	Semelab	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR	Original	PDF
BUL54A	Semelab	Bi-Polar Transistors (CECC and High Rel) & High Energy	Scan	PDF
BUL54AFI	Semelab	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR	Original	PDF
BUL54A-SM	Semelab	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR	Original	PDF
BUL54ASMD	Semelab	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR	Original	PDF
BUL54A-TO5	Semelab	Bipolar NPN Device in a Hermetically Sealed TO5 Metal Package	Original	PDF
BUL54B	Semelab	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR	Original	PDF
BUL54B	Semelab	Bi-Polar Transistors (CECC and High Rel) & High Energy	Scan	PDF
BUL54BFI	Semelab	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR	Original	PDF
BUL54BSMD	Semelab	Bipolar NPN Device in a Hermetically Sealed Ceramic Surface Mount Package for High Reliability Applications	Original	PDF

BUL54 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BUL54BSMD Abstract: No abstract text available Text: BUL54BSMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed	Original	BUL54BSMD O276AB) 15-Aug-02 BUL54BSMD	PDF
BUL54AFI Abstract: transistor 500v 0.5a NPN Transistor VCEO 1000V Text: SEME BUL54AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 2.54 2.54	Original	BUL54AFI 100mA BUL54AFI transistor 500v 0.5a NPN Transistor VCEO 1000V	PDF
BUL54B Abstract: transistor 800V 1A Text: SEME BUL54B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 2.54 2.54	Original	BUL54B 100mA BUL54B transistor 800V 1A	PDF
Untitled Abstract: No abstract text available Text: SEME BUL54A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3	Original	BUL54A 100mA	PDF
Untitled Abstract: No abstract text available Text: SEME BUL54BFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 2.54 2.54	Original	BUL54BFI 100mA	PDF
BUL54ASMD Abstract: NPN Transistor VCEO 1000V Text: BUL54ASMD ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 3 .6 0 0 .1 4 2 M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 )	Original	BUL54ASMD 100mA 10MHz 300ms BUL54ASMD NPN Transistor VCEO 1000V	PDF
Untitled Abstract: No abstract text available Text: SEME BUL54AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 2.54 2.54	Original	BUL54AFI 100mA	PDF
TO5 package Abstract: BUL54A-TO5 Text: BUL54A-TO5 Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)	Original	BUL54A-TO5 O205AA) 20-Aug-02 TO5 package BUL54A-TO5	PDF
NPN Transistor VCEO 1000V Abstract: No abstract text available Text: SEME BUL54A-T257F LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 4.50 4.81 10.40 10.80 3.50 Dia. 3.70 Designed for use in electronic ballast applications 10.50 10.67 16.30 16.70 3.0	Original	BUL54A-T257F 100mA 300ms NPN Transistor VCEO 1000V	PDF
BUL54A Abstract: NPN Transistor VCEO 1000V Text: SEME BUL54A–SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 11.5 0.25 3.5 1 3 3.0 9.0 1.5 15.8 4.6 2.0 3.5 2 8.5 FEATURES TO220 Ceramic Surface Mount Package Pad 1 – Base Pad 2 – Collector	Original	BUL54A 500mA 100mA 10MHz NPN Transistor VCEO 1000V	PDF
NPN Transistor VCEO 1000V Abstract: BUL54A-TO5 Text: SEME BUL54A-TO5 LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 8.51 0.34 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Designed for use in electronic ballast applications 6.10 (0.240) 6.60 (0.260)	Original	BUL54A-TO5 O-205AA) NPN Transistor VCEO 1000V BUL54A-TO5	PDF
Untitled Abstract: No abstract text available Text: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and	Original	BUL54A-TO5 O-205AA)	PDF
BUL54BFI Abstract: No abstract text available Text: SEME BUL54BFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 2.54 2.54	Original	BUL54BFI 100mA BUL54BFI	PDF
NPN Transistor VCEO 1000V Abstract: BUL54A transistor 500v 0.5a Text: SEME BUL54A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3	Original	BUL54A 100mA NPN Transistor VCEO 1000V BUL54A transistor 500v 0.5a	PDF

Untitled Abstract: No abstract text available Text: SEME BUL54B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 2.54 2.54	Original	BUL54B 100mA	PDF
transistor VCEO 1000V Abstract: NPN Transistor VCEO 1000V BUL54A-TO5 LE17 Text: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and	Original	BUL54A-TO5 O-205AA) transistor VCEO 1000V NPN Transistor VCEO 1000V BUL54A-TO5 LE17	PDF
transistor 800V 1A Abstract: No abstract text available Text: bOE D fll331fl? 000051b 111 • S N L B SEMELAB PLC SEMELAB 'T J 'S - v l? BUL54B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensionsin mm Designed for use in electronic ballast lighting applications	OCR Scan	fll331fl? 000051b BUL54B T0220 300/is transistor 800V 1A	PDF
Untitled Abstract: No abstract text available Text: INI INI SEME BUL54BFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 t* - * \ à 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE	OCR Scan	BUL54BFI 100mA	PDF
Untitled Abstract: No abstract text available Text: lili = & = m i S E M E BUL54A-SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm •SEMEFAB DESIGNED AND DIFFUSED DIE — _2.0 3.5 r ^ ►n .o*— ! - 111 •HIGH VOLTAGE 0.25 3.5	OCR Scan	BUL54A-SM T0220 100mA 10MHz	PDF
MIL npn high voltage transistor 1000V Abstract: No abstract text available Text: Illl = lt = Illl SEME BUL54A-SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 'SEMEFAB DESIGNED AND DIFFUSED DIE :-► r4- •HIGH VOLTAGE 2.0 3.5 ► < 3.5 • FAST SWITCHING tf = 40ns	OCR Scan	BUL54A-SM T0220 MIL npn high voltage transistor 1000V	PDF
Semefab Abstract: MIL npn high voltage transistor 1000V Text: Mil =X= mi SEME BUL54A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 4.5 10.2 f*-► , 1.3 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE	OCR Scan	BUL54A T0220 100mA Semefab MIL npn high voltage transistor 1000V	PDF
Untitled Abstract: No abstract text available Text: INI INI SEME BUL54AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE 1 2 3 • HIGH VOLTAGE	OCR Scan	BUL54AFI 100mA	PDF
T0251 Abstract: T0-251 Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUL47A BUL47B BUL48A BUL48B BUL49A BUL49B BUL50A BUL50B BUL51A BUL51B BUL52A BUL52AFI BUL52AH BUL52B BUL52BFI BUL52BL BUL53A BUL53B BUL54A BUL54B BUL54BFI BUL55A BUL55B BUL56A BUL56B BUL57A BUL58A	OCR Scan	BUL47A BUL47B BUL48A BUL48B BUL49A BUL49B BUL50A BUL50B BUL51A BUL51B T0251 T0-251	PDF
transistor 800V 1A Abstract: No abstract text available Text: Mil =X= mi SEME BUL54B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 t-\ à 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE	OCR Scan	BUL54B 100mA transistor 800V 1A	PDF

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BUL54 Price and Stock

Inventek Systems LLC ISM4343-WBU-L54U

Inventek Systems LLC ISM4343-WBU-L54C

BUL54 Datasheets (11)

BUL54 Datasheets Context Search

BUL54BSMD

BUL54AFI

BUL54B

Untitled

Untitled

BUL54ASMD

Untitled

TO5 package

NPN Transistor VCEO 1000V

BUL54A

NPN Transistor VCEO 1000V

Untitled

BUL54BFI

NPN Transistor VCEO 1000V

Untitled

transistor VCEO 1000V

transistor 800V 1A

Untitled

Untitled

MIL npn high voltage transistor 1000V

Semefab

Untitled

T0251

transistor 800V 1A