Untitled
Abstract: No abstract text available
Text: BUZ907DP BUZ908DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 P–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS 1 2 FEATURES 3 • HIGH SPEED SWITCHING 2.0 2.0 1.0 • SEMEFAB DESIGNED AND DIFFUSED 3.4 • HIGH VOLTAGE 220V & 250V
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BUZ907DP
BUZ908DP
BUZ902DP
BUZ903DP
-220V
-250V
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semefab
Abstract: TRANSISTOR ARRAY semefab+051
Text: PPS 171 Analogue Transistor Array Process Preview Datasheet Rev 1.0 July 2000 Description The Semefab PPS171 Analogue Transistor Array process is available on a foundry basis and is qualified for use with the 700 Series Linear Bipolar Semicustom Arrays from Array Design.
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PPS171
33x33
118x119
semefab
TRANSISTOR ARRAY
semefab+051
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Untitled
Abstract: No abstract text available
Text: BUP50A MECHANICAL DATA Dimensions in mm NPN MULTI-EPITAXIAL VERY FAST SWITCHING HIGH POWER TRANSISTOR 25.4 1.0 10.92 (0.430) 1.57 (0.062) FEATURES • DIFFUSED BY SEMEFAB • VERY LOW VCE(sat) • VERY FAST SWITCHING 30.1 5 (1.187) • HIGH SWITCHING CURRENTS
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BUP50A
BUP50A
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SEM-E
Abstract: transistor VCE 1000V to220 01455 NPN Transistor VCEO 1000V vce 500v NPN Transistor BUL52AFI transistor 500v 0.5a
Text: SEME BUL52AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 Designed for use in electronic ballast applications 15.1 3.6 Dia. • • • • 1 2 3 14.0 1.3 0.85 SEMEFAB DESIGNED AND DIFFUSED DIE
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BUL52AFI
SEM-E
transistor VCE 1000V to220
01455
NPN Transistor VCEO 1000V
vce 500v NPN Transistor
BUL52AFI
transistor 500v 0.5a
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BUL58BSMD
Abstract: 028W
Text: BUL58BSMD MECHANICAL DATA Dimensions in mm 3 .6 0 0 .1 4 2 M a x . • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE • FAST SWITCHING • HIGH ENERGY RATING 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 )
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BUL58BSMD
300ms
BUL58BSMD
028W
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BUP50A
Abstract: BUP50 IC 1165
Text: BUP50A MECHANICAL DATA Dimensions in mm NPN MULTI-EPITAXIAL VERY FAST SWITCHING HIGH POWER TRANSISTOR 25.4 1.0 10.92 (0.430) 1.57 (0.062) FEATURES • DIFFUSED BY SEMEFAB • VERY LOW VCE(sat) • VERY FAST SWITCHING 30.15 (1.187) • HIGH SWITCHING CURRENTS
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BUP50A
BUP50A
BUP50
IC 1165
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BUZ907DP
Abstract: BUZ902DP 250v 16a 250w mosfet BUZ903DP BUZ908DP Magnatec p-channel 250V 16A power mosfet p-channel 250V power mosfet
Text: BUZ907DP BUZ908DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 P–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS 1 2 FEATURES 3 • HIGH SPEED SWITCHING 2.0 2.0 1.0 • SEMEFAB DESIGNED AND DIFFUSED 3.4 • HIGH VOLTAGE 220V & 250V
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BUZ907DP
BUZ908DP
BUZ902DP
BUZ903DP
-220V
-250V
BUZ907DP
BUZ902DP
250v 16a 250w mosfet
BUZ903DP
BUZ908DP
Magnatec
p-channel 250V 16A power mosfet
p-channel 250V power mosfet
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g171
Abstract: BUL47B semefab G971A BUL46A BUL46B BUL47A G271A G871A G871DE
Text: 4AE D • 6133167 □□ □□ 41 4 SENELAB LTD M DISTRIBUTED BASE TECHNOLOGY DIE DESIGNED AND DIFFUSED BY SEMEFAB ' - G171 chip family The G 171 chip family is an NPN bipolar multiepitaxial planar transistor using SEMEFAB’S new ADVANCED DISTRIBUTED BASE TECHNOLOGY
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DQD0414
-275x275
-550/im
-20x48mils
-18x53
G271A
G971A
G871A
GS71DE
g171
BUL47B
semefab
BUL46A
BUL46B
BUL47A
G871DE
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G872A
Abstract: G672A semefab BUL48B BUL49A BUL49B G172 G272A G372A G572A
Text: Ô1331Ô7 ODODHIS 3TH « SM l- B MÛE D SEM EFABI SEMELAB LTD DIFFUSION DISTRIBUTED BASE TECHNOLOGY DIE DESIGNED AND DIFFUSED BY SEMEFAB G172 chip family The G172 chip family is an NPN bipolar multiepitaxial planar transistor using SEMEFAB’S new ADVANCED DISTRIBUTED BASE TECHNOLOGY
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-229x229
550/xm
PASG672A
G372A
G272A
G872A
G872DE
100mA)
BUL49B
G672A
semefab
BUL48B
BUL49A
G172
G572A
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semefab
Abstract: No abstract text available
Text: Semefab Wafer Fabrication Sem efab sem iconductor design and w afer fabrication Semefab is Semelab Group’s wafer fabrication facility, based in Glenrothes, Fife. As a relativ ely small b usiness, we are completely flexible. W hether you have a foundry or a custom silicon requirem ent, we work with
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HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET
Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
Text: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED
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BUZ905D
BUZ906D
-100mA
-160V
-200V
HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET
2SJ56 2sk176
mosfet cross reference
2sk135 audio application
lateral mosfet audio amplifier
BUZ901P
2sJ50 mosfet
hitachi mosfet power amplifier audio application
BUZ900P
BUZ900D
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PDF
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MIL npn high voltage transistor 500V
Abstract: No abstract text available
Text: Mil = ^ = INI BUL52AFI SEME LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 Designed for use in electronic ballast applications 3.6 Dia. • SEMEFAB DESIGNED AND DIFFUSED DIE 1 2 3
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BUL52AFI
T0220
MIL npn high voltage transistor 500V
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Untitled
Abstract: No abstract text available
Text: INI = ^ = M il SEME BUL74B LAB MECHANICAL DATA Dimensions in mm 10.2 4.5 1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE
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BUL74B
O-220
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Untitled
Abstract: No abstract text available
Text: Mil =X= mi SEME BUL65A LAB MECHANICAL DATA Dimensions in mm 2 .1 8 0 .086 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE
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BUL65A
T0251)
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buz906dp
Abstract: No abstract text available
Text: BUZ905DP BUZ906DP M ECHANICAL DATA Dimensions in mm P-CHANNEL POWER MOSFET 5 .C POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V) • HIGH ENERGY RATING
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BUZ905DP
BUZ906DP
BUZ900DP
BUZ901DP
buz906dp
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PDF
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30D40
Abstract: No abstract text available
Text: BUZ900 BUZ901 IV I A CB INI A MECHANICAL DATA Dimensions in mm N-CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V • HIGH ENERGY RATING
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BUZ900
BUZ901
BUZ905
BUZ906
BUZ901
30D40
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PDF
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BUZ902DP
Abstract: No abstract text available
Text: X BUZ902DP BUZ903DP IV I A O INI A MECHANICAL DATA Dimensions in mm N-CHANNEL POWER MOSFET 5.C POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 220V & 250V) • HIGH ENERGY RATING 0.6
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BUZ902DP
BUZ903DP
BUZ907DP
BUZ908DP
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PDF
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Untitled
Abstract: No abstract text available
Text: INI INI SEME BUL54BFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 t* - * \ à 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE
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BUL54BFI
100mA
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PDF
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NPN Transistor 600V 0,2A
Abstract: No abstract text available
Text: Mil = ^ = INI BUL55A SEME LAB MECHANICAL DATA Dimensions in mm 4.5 10.2 , f*-► f*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE
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BUL55A
T0220
NPN Transistor 600V 0,2A
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Untitled
Abstract: No abstract text available
Text: bOE D • A1331Ô7 ODGDSQfl QMS ■ SMLB SEMELAB PLC SEMELAB 'T S V lS BU L48B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR M E C H A N IC A L D A TA D im ension s in m m • SEMEFAB DESIGNED A N D DIFFUSED • HIGH VOLTAGE VCE>0= 800V
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A1331Ã
LE174JB
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til 701
Abstract: photodiode die WAFER MAGNATEC LATERAL MOSFET magnatec mosfets depletion mode mosfet 100 MHz semefab Power MOSFET Wafer pps 501 semelab mosfet lateral
Text: til// 'rr* 'WWr Semefab SILICON DESIGN — WAFER FABRICATION SEMEFAB SCOTLAND LTD. is the Group's wafer fabrication facility based in Glenrothes, Fife. Located adjacent to Compugraphics, Europe's largest independent mask manufacturer, SEMEFAB has a capacity of
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100mm
10OOnm
til 701
photodiode die WAFER
MAGNATEC LATERAL MOSFET
magnatec mosfets
depletion mode mosfet 100 MHz
semefab
Power MOSFET Wafer
pps 501
semelab mosfet lateral
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BUZ900P
Abstract: L01A BUZ901P 8uz90 BUZ901 BUZ905P BUZ906P
Text: <\ BUZ900P BUZ901P IIVI/VGIMA 't e c MECHANICAL DATA N-CHANNEL POWER MOSFET Dimensions in mm inches 1 5 .4 9 (0 6 1 0 ) 16 2 6 (0 6 4 0 ) POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED
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BUZ900P
BUZ901P
BUZ905P
BUZ906P
L01A
BUZ901P
8uz90
BUZ901
BUZ905P
BUZ906P
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PDF
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G675A
Abstract: BUL53A BUL53B G175 G275A G375A G575A G875A G875DE G975A
Text: 46E T> m 6 1 3 3 1 6 7 DDDDHlb 5 3 0 • S f l L B DIFFUSION SEMEFABI S E H E L A B DISTRIBUTED BASE TECHNOLOGY DIE DESIGNED AND DIFFUSED BY SEMEFAB "P G175 chip family J LTD * Z S 'V l The G 175 chip family is an NPN bipolar multiepitaxial planar transistor using SEMEFAB’S new
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-126x126
-56x29mils
G575A
G67SA
G375A
G275A
G975A
G875A
G875DE
BUL53B
G675A
BUL53A
G175
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PDF
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npn triple diffused transistor 500v 8a
Abstract: No abstract text available
Text: Mil =X= mi SEME BUL65B LAB MECHANICAL DATA Dimensions in mm 2 .1 8 0 .086 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE
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BUL65B
T0251)
npn triple diffused transistor 500v 8a
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