Untitled
Abstract: No abstract text available
Text: PolarHTTM HiPerFET Power MOSFET IXFC 74N20P VDSS ID25 RDS on Electrically Isolated Tab N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated trr = = = ≤ 200 35 36 200 V A Ω mΩ ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings
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74N20P
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74n20
Abstract: 36gd
Text: PolarHTTM HiPerFET IXFC 74N20P Power MOSFET ISOPLUS220TM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = = ≤ 200 35 36 200 V A Ω mΩ ns N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated Symbol Test Conditions Maximum Ratings
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74N20P
ISOPLUS220TM
6-15-05-D
74n20
36gd
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74N20P
Abstract: No abstract text available
Text: IXTQ 74N20P IXTT 74N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 74 A ≤ 34 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 200 V V VGSS VGSM Continuous
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74N20P
O-268
74N20P
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 68N20 IXFH/IXFT 74N20 RDS on 200 V 68 A 35 mW 200 V 74 A 30 mW trr £ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Maximum Ratings ID25 Symbol Test Conditions VDSS TJ = 25°C to 150°C 200 V
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68N20
74N20
O-268
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74N20P
Abstract: No abstract text available
Text: IXTQ 74N20P IXTT 74N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 74 A Ω ≤ 34 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 200 V V VGSS VGSM Continuous
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74N20P
O-268
74N20P
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Untitled
Abstract: No abstract text available
Text: VDSS ID25 PolarHTTM HiPerFET IXFC 74N20P Power MOSFET ISOPLUS220TM RDS on trr (Electrically Isolated Back Surface) = = = ≤ 200 35 36 200 V A Ω mΩ ns N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated Symbol Test Conditions Maximum Ratings
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74N20P
ISOPLUS220TM
6-15-05-D
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74N20
Abstract: IXFH68N20 IXFK72N20 IXFK80N20 68N20
Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 68N20 IXFH/IXFT 74N20 RDS on 200 V 68 A 35 mW 200 V 74 A 30 mW trr £ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Maximum Ratings ID25 Symbol Test Conditions VDSS TJ = 25°C to 150°C 200 V
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68N20
74N20
O-268
74N20
IXFH68N20
IXFK72N20
IXFK80N20
68N20
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Untitled
Abstract: No abstract text available
Text: IXTQ 74N20P IXTT 74N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 74 A Ω = 34 mΩ RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 200 200 V V VGS VGSM Continuous
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74N20P
74N20P
O-268
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74n20
Abstract: PLUS220SMD
Text: PolarHTTM HiPerFET Power MOSFET IXFH 74N20P IXFV 74N20P IXFV 74N20PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated = = = ≤ 200 74 34 200 V A Ω mΩ ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings
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74N20P
74N20PS
74N20P
74n20
PLUS220SMD
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Untitled
Abstract: No abstract text available
Text: IXTQ 74N20P IXTT 74N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 74 A Ω = 34 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25
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74N20P
O-268
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74N20P
Abstract: PLUS220SMD
Text: PolarHTTM HiPerFET IXFH 74N20P IXFV 74N20P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated trr IXFV 74N20PS RDS on Symbol Test Conditions VDSS TJ = 25° C to 175° C 200 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 200
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74N20P
74N20PS
74N20P
PLUS220SMD
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IXTD08N100P-1A
Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types
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31d8 diode datasheet
Abstract: 31d8 diode 31d8 D 83 004 hd 22 l21 diode s21 diode 302H
Text: rtzqs5qv /y*u4 0-w~y1 w|u/uw1y/}01}w0 B[]W H`0<A3556:3 =^T[W_e eW^aWcSefcW < LSeWV g`]eSYW < LSeWV UfccW_e < /62 e` 92 472P=? 32= ,aWc a`]W- @[W]WUec[U decW_YeZ ^[_0 < 4222P=? ,TWehWW_ [_afe + `feafe- MeWW] cWeS[_Wc ejaW < 3:BB/D3 GSc\Wc < G`Vf]W < NWc^[_S] e`cbfW<
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4222P=
4i307^
A3556
DB35B
u4-21
74n204
47n204
31d8 diode datasheet
31d8 diode
31d8
D 83 004
hd 22
l21 diode
s21 diode
302H
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs VDSS IXFH/IXFT68N20 IXFH/74N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Maximum Ratings Test Conditions VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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IXFH/IXFT68N20
IXFH/IXFT74N20
68N20
74N20
74N20
O-247
O-268
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STW20N60
Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal
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O-220,
ISOPLUS220TM,
O-247,
ISOPLUS247TM,
O-264,
ISOPLUS264TM.
PLUS220
ISOPLUS220TM
PLUS220SMD
O-252
STW20N60
2n60p
IXFB100N50
IXFB100N50P
STW20N60FD
IXFB100N50P TO-264
ixys ixfn100n50p
IXFN48n60p
IXFH30N60P
ixfn100n50p
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DIODE 1334
Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205
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110N055P-5S
75N10P-5S
110N10P-6S
140N10P-7S
170N10P-8S
200N10P-88
62N15P-5S
96N15P-6S
120N15P-7S
150N15P-8S
DIODE 1334
1334 diode
96N20
36N30P equivalent
88N30
100N25P
36N30
IXTP75N10P
IXTP IXTP IXTP IXTP
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Untitled
Abstract: No abstract text available
Text: v. High Current MegaMOS FET IXTK 74N20 VDSS D 25 RDS on N-Channel Enhancement Mode = 200 V = 74 A = 35 mii TO-264 AA ' DGR T, = 2 5°C to 150°C; f^s= 1.0 Mfì es Continuous G SM Transient D 25 200 ±20 ±30 Tc = 25° C Tc = 2 5 °C, pulse width limited byJ TJM
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74N20
O-264
otherw786
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Untitled
Abstract: No abstract text available
Text: a ixY S Advanced Technical Information IXTK 74N20 High Current MegaMOS FET V DSS = 200 V ID = 74 A 25 RDS on = 35 mQ N-Channel Enhancement Mode TO-264 AA Maximum ratings Symbol Test conditions V DSS ^ = 25°C to 150°C vDGR ^ = 25°C to 150°C; Rgs VGS
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74N20
O-264
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mq68
Abstract: No abstract text available
Text: OIXYS VDSS High Current MegaMOS FET IXTK 74 N20 IXTH 68 N20 200 V 200 V RDS on ^D25 74 A 35 mQ 68 A 35 mQ N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings VOSS Tj = 25 °C to150 °C 200 V V™ Tj = 25°C to 150°C; RGS= 1 .0 M il
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to150
74N20
68N20
O-247AD
O-264
mq68
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Untitled
Abstract: No abstract text available
Text: DIXYS Advanced Technical Information HiPerFET Power MOSFETs V DSS IXFH/IXFT68N20 IXFH/74N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Maximum Ratings TO-247 AD IXFH V DSS Td = 25°C to 150°C 200 V vDGR Td = 25°C to 150°C; RGS = 1 M£i
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IXFH/IXFT68N20
IXFH/IXFT74N20
O-247
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Untitled
Abstract: No abstract text available
Text: □IXYS High Current MegaMOS FET IXTK 74 N20 IXTH 68 N20 V DSS ^D25 200 V 200 V 74 A 68 A D DS on 35 mQ 35 mQ N-Channel Enhancement Mode Preliminary data Symbol Maximum ratings Test conditions V DSS Td = 25°C to 150°C 200 V v DGR Td = 25°C to 150°C; RGS=1.0 M£2
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O-247AD
74N20
68N20
O-264
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11n80
Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80
Text: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088
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O-247
O-251
O-204
O-264
15N60
20N60
15N70
01N80*
35N30
40N30
11n80
ixys ixth 21N50
C2100
G264
2N100
ixth75n10
74N20
C2104
C294
13n80
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6N80
Abstract: IXTN 36N50 C 40N160 40N140 ixtn 79n20 30N45 irfp 240 IXTK33N50 IXTN21N100 IRFP
Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode t jm = 150°c ► New V p >D25 Tc = 25°C A DS on Tc = 25°C a 200 30 42 50 IRFP 254 250 ► IRFP 264 thJC K/W W 300 4 180 360 140 0.65 190 4600 285 400 220 0.42 300 360 max. max. max. 68
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67N10
75N10
42N20
50N20
68N20
35N30
40N30
30N45
12N50A
21N50
6N80
IXTN 36N50 C
40N160
40N140
ixtn 79n20
irfp 240
IXTK33N50
IXTN21N100
IRFP
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52N30
Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70
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76N06-11
76N07-11
76N07-12
67N10
75N10
50N20
58N20
74N20
80N20
35N30
52N30
20n80
ixfh 60N60
IXFX 44N80
15n10
7n80
E51G
44N80
60n60
46N50
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