40N30 Search Results

40N30 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
R5S77640N300BG		Renesas Electronics Corporation	8-bit Microcontrollers (Non Promotion)

40N30 Price and Stock

Filter by Manufacturer


Littelfuse Inc IXFK140N30P MOSFET N-CH 300V 140A TO264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK140N30P	Tube	421		1	1 $23.16 10 $23.16 100 $23.16 1000 $23.16 10000 $23.16	Buy Now
RS	IXFK140N30P	Bulk		8 Weeks	25	1 - 10 - 100 $21.07 1000 $21.07 10000 $21.07	Get Quote
CoreStaff Co Ltd	IXFK140N30P		125			1 $20.553 10 $15.553 100 $15.553 1000 $15.553 10000 $15.553	Buy Now
	IXFK140N30P		47			1 $20.553 10 $15.553 100 $15.553 1000 $15.553 10000 $15.553	Buy Now
Littelfuse Inc IXFN140N30P MOSFET N-CH 300V 110A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN140N30P	Tube	85		1	1 $23.86 10 $22.166 100 $22.166 1000 $22.166 10000 $22.166	Buy Now
RS	IXFN140N30P	Bulk		8 Weeks	10	1 - 10 $34.28 100 $34.28 1000 $34.28 10000 $34.28	Get Quote
Littelfuse Inc IXTK140N30P MOSFET N-CH 300V 140A TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTK140N30P	Tube	14		300	1 - 10 - 100 - 1000 $14.57273 10000 $14.57273	Buy Now
Newark	IXTK140N30P	Bulk			300	1 - 10 - 100 - 1000 $15.28 10000 $15.28	Buy Now
IXYS Corporation IXTH40N30 MOSFET N-CH 300V 40A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH40N30	Tube			30	1 - 10 - 100 $7.15533 1000 $7.15533 10000 $7.15533	Buy Now
Mouser Electronics	IXTH40N30					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	IXTH40N30	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	IXTH40N30		203			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	IXTH40N30	Tube			30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXTM40N30 MOSFET N-CH 300V 40A TO204AE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTM40N30	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more 40N30 price and stock on Findchips.com

40N30 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
40N30		IXYS	Hiperfast IGBT		Original	PDF

40N30 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
40N30Q Abstract: IXYS 40N30Q Text: HiPerFETTM Power MOSFETs IXFH 40N30Q IXFT 40N30Q Q-Class VDSS ID25 = 300 V = 40 A = 80 mW £ 250 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	40N30Q O-268 40N30Q IXYS 40N30Q	PDF
IXYS 40N30Q Abstract: 40N30Q Text: HiPerFETTM Power MOSFETs IXFH 40N30Q IXFT 40N30Q Q-Class VDSS ID25 = 300 V = 40 A = 80 mW £ 250 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	40N30Q 40N30Q O-268 O-247 O-268AA IXYS 40N30Q	PDF
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT VCES IXGH 40N30 IXGH 40N30A IXGH 40N30B IC25 300 V 60 A 300 V 60 A 300 V 60 A VCE sat tfi 1.8 V 220 ns 2.1 V 120 ns 2.4 V 75 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 300 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	40N30 40N30A 40N30B	PDF
ad6v Abstract: 40N30A 40N30 Text: HiPerFASTTM IGBT VCES IXGH 40N30 IXGH 40N30A IXGH 40N30B IC25 600 V 60 A 600 V 60 A 600 V 60 A VCE sat tfi 1.8 V 2.1 V 2.4 V 220ns 120ns 75 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	40N30 40N30A 40N30B 220ns 120ns O-247 40N30B ad6v	PDF
40N30 Abstract: 98536 IXFH40N30 Text: HiPerFETTM Power MOSFETs IXFJ 40N30 VDSS = 300 ID25 = RDS on = V 40 A 80 mW trr < 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 300 V VDGR T J = 25°C to 150°C; RGS = 1 MW	Original	40N30 98536 IXFH40N30	PDF
Untitled Abstract: No abstract text available Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM Power MOSFETs IXFC 40N30Q Q-Class Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C	Original	40N30Q ISOPLUS220TM 728B1 123B1 065B1	PDF
40N30L Abstract: ixfm40n30 Text: HiPerFETTM Power MOSFETs VDSS IXFM 35 N30L IXFM 40 N30L 300 V 300 V Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 300 V VGS Continuous ±20 V VGSM Transient ±30 V I D25 TC = 25°C 35N30 40N30 35 40 A	Original	35N30 40N30 40N30 O-204 40N30L ixfm40n30	PDF
IXFH40N30 Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFJ 40N30 VDSS = 300 ID25 = RDS on = V 40 A 80 mW trr < 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MW	Original	40N30 IXFH40N30	PDF
ad6v Abstract: No abstract text available Text: HiPerFASTTM IGBT VCES IXGH 40N30 IXGH 40N30A IXGH 40N30B IC25 600 V 60 A 600 V 60 A 600 V 60 A VCE sat tfi 1.8 V 2.1 V 2.4 V 220ns 120ns 75 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	40N30 40N30A 40N30B 220ns 120ns O-247 40N30B ad6v	PDF
IXTH35N30 Abstract: IXTH40N30 IXTM40N30 Text: MegaMOSTMFET IXTH 35N30 IXTH 40N30 IXTM 40N30 VDSS ID25 RDS on 300 V 300 V 300 V 35 A 40 A 40 A 0.10 Ω 0.085 Ω 0.088 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	35N30 40N30 O-247 O-204 IXTH35N30 IXTH40N30 IXTM40N30	PDF
12n60c Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60 Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM	Original	O-220 O-263 O-247 PLUS247 O-268 ISOPLUS247TM O-264 20N30 28N30 30N30 12n60c 60n60 igbt diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60	PDF
1M300 Abstract: 40N30 40n30a Text: HiPerFASTTM IGBT VCES IC25 IXGH 40N30/S 300 V 60 A IXGH 40N30A/S 300 V 60 A IXGH 40N30B/S 300 V 60 A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V VGES Continuous ±20 V VGEM Transient	Original	40N30/S 40N30A/S 40N30B/S 220ns 120ns 1M300 40N30 40n30a	PDF
IXFC40N30Q Abstract: No abstract text available Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM Power MOSFETs IXFC 40N30Q Q-Class Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM 80 80 V V Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM	Original	40N30Q 220TM 728B1 IXFC40N30Q	PDF
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT VCES IC25 IXGH 40N30/S 300 V 60 A IXGH 40N30A/S 300 V 60 A IXGH 40N30B/S 300 V 60 A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V VGES Continuous ±20 V VGEM Transient	Original	40N30/S 40N30A/S 40N30B/S 220ns 120ns	PDF

IXTH35N30 Abstract: No abstract text available Text: n ix Y S v DSS ^D25 300 V 300 V 300 V 35 A 40 A 40 A MegaMOS FET IXTH 35N30 IXTH 40N30 IXTM 40N30 p DS on 0.10 £1 0.085 Q, 0.088 £2 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T j =25°C to150°C 300 V v DG„ Tj = 25° C to 150° C; RGS= 1 Mi2	OCR Scan	35N30 40N30 to150 O-247 T0-204 IXTH35N30	PDF
75N1 Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH	OCR Scan	76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B	PDF
SMD diode b24 Abstract: diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode Text: QIXYS HtPerFAST _ fG&T G-Series ^ Contents A \ v CES V TO-220 IXGP TO-247 ^ TO-263 (IXGA) TO-247 SMD/.S* T0-204 miniBLOC Page 300 60 60 1.6 1.8 IXGH 30N30/.S IXGH 40N30/.S B2-4 B2-6 600 40 76 75® 75 1.8 1.8 2.5 1.8 IXGH IXGH IXGH IXGH B2-64	OCR Scan	12N100 O-220 O-263 O-247 O-247 T0-204 30N30/. 40N30/. 31N60 SMD diode b24 diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode	PDF
120n60b Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *	OCR Scan	O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B	PDF
SMD B26 Abstract: SMD L4 Text: DIXYS v CES Hi PerFAST IGBT ^C25 IXGH 40N30/S 600 V 60 A IXGH 40N30A/S 600 V 60 A IXGH 40N30B/S 600 V 60 A V * CE sat t. 220ns 120ns 75 ns 1.8 V 2.1 V 2.4 V Preliminary data Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 300 V VCOR Tj	OCR Scan	40N30/S 40N30A/S 40N30B/S 220ns 120ns Cto150 O-247 SMD B26 SMD L4	PDF
1Bt smd Abstract: smd 1bt A1t smd smd diode A1T smd 1bt diode 35N30 40N30 IXFH40N30 diode D83 004 D-68623 Text: □IXYS IXFH 35N30 IXFH 40N30 ^DSS 300 V 300 V 300 V •TM HiPerFET Power MOSFETs IXFH/FM 35N30 IXFH 40N30 IXFM 40N30 IXFM 35N30 IXFM 40N30 ^D25 35 A 40 A 40 A D DS on trr 100m Q. 200 ns 85m Q. 200 ns 88m Q. 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS Family	OCR Scan	35N30 40N30 40N30 1Bt smd smd 1bt A1t smd smd diode A1T smd 1bt diode IXFH40N30 diode D83 004 D-68623	PDF
IXFH40N30 Abstract: international rectifier igbt to-247 package Text: v DSS HiPerFET Power MOSFETs ix f h / ix f m 35N30 40N30 40N30 N-Channel Enhancement Mode High dv/dt, Low t , HDMOS™ Family Symbol v' dss = 25°C to 150°C 300 V 300 V V VGS Continuous ±20 Vc*« Transient ±30 V u Tc = 25°C 35N30 40N30 35 40	OCR Scan	ixfh35N30 ixfm35N30 IXFH40N30 IXFM40N30 35N30 40N30 international rectifier igbt to-247 package	PDF
IXFH40N30 Abstract: No abstract text available Text: IBIXYS HiPerFET Power MOSFETs IXFH 40N30 DSS I D25 RDS on t rr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol v DSS Test Conditions Maximum Ratings T j =25°C to150°C 300 V T j = 2 5°C to 150°C; RGS= 1 Mi2 300 V VGS v GSM Continuous	OCR Scan	40N30 to150 O-247 IXFH40N30	PDF
IXYS DS 145 Abstract: IXFH40N30 Text: HiPerFET Power MOSFETs IXFJ 40N30 VDSS = 300 V = 40 A D25 R = 80 mQ DS on trr < 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data sheet Symbol Test Conditions v DSS Tj =25°Cto150°C v D0R ^ v GS v GSM ' d 25 Maximum Ratings	OCR Scan	40N30 Cto150 O-220 40N30 IXYS DS 145 IXFH40N30	PDF
2QN60 Abstract: ixgh 1500 Text: IGBT with Diode /G ^ S p e e , S = Suffix c G series high gain, high speed V Type t jm = 150° c >- New { IXGA 12N100U1 IXGP 12N100U1 IXGH 12N100U1 I j £ 1 S. Î I* IXGH > IXGH IXGH IXGH IXGH 17N100U1 40N30BD1 22N50BU1 24N50BU1 32N50BU1 V IXGH IXGH IXGH	OCR Scan	T0-220AB^ 12N100U1 17N100U1 40N30BD1 22N50BU1 24N50BU1 32N50BU1 2QN60BU1 2QN60 ixgh 1500	PDF

40N30 Search Results

40N30 Result Highlights (1)

40N30 Price and Stock

Littelfuse Inc IXFK140N30P

Littelfuse Inc IXFN140N30P

Littelfuse Inc IXTK140N30P

IXYS Corporation IXTH40N30

IXYS Corporation IXTM40N30

40N30 Datasheets (1)

40N30 Datasheets Context Search

40N30Q

IXYS 40N30Q

Untitled

ad6v

40N30

Untitled

40N30L

IXFH40N30

ad6v

IXTH35N30

12n60c

1M300

IXFC40N30Q

Untitled

IXTH35N30

75N1

SMD diode b24

120n60b

SMD B26

1Bt smd

IXFH40N30

IXFH40N30

IXYS DS 145

2QN60