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    15N10 Search Results

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    15N10 Price and Stock

    Walsin Technology Corporation MT15N101J500CT

    CAP CER 100PF 50V C0G/NP0 0402
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    DigiKey MT15N101J500CT Digi-Reel 21,540 1
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    MT15N101J500CT Cut Tape 21,540 1
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    MT15N101J500CT Reel 10,000 10,000
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    Newark MT15N101J500CT Reel 10,000 10,000
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    MT15N101J500CT Cut Tape 2,905 10
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    Bristol Electronics MT15N101J500CT 90,000
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    TME MT15N101J500CT 10,000
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    Infineon Technologies AG IPT015N10N5ATMA1

    MOSFET N-CH 100V 300A 8HSOF
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    DigiKey IPT015N10N5ATMA1 Cut Tape 13,217 1
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    IPT015N10N5ATMA1 Digi-Reel 13,217 1
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    IPT015N10N5ATMA1 Reel 12,000 2,000
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    Avnet Americas IPT015N10N5ATMA1 Reel 28,000 18 Weeks 2,000
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    IPT015N10N5ATMA1 Ammo Pack 16 Weeks, 3 Days 1
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    Mouser Electronics IPT015N10N5ATMA1 8,901
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    Newark IPT015N10N5ATMA1 Cut Tape 17,474 1
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    Rochester Electronics IPT015N10N5ATMA1 11,338 1
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    Chip1Stop IPT015N10N5ATMA1 Cut Tape 935
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    EBV Elektronik IPT015N10N5ATMA1 754,000 19 Weeks 2,000
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    New Advantage Corporation IPT015N10N5ATMA1 604,000 1
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    Win Source Electronics IPT015N10N5ATMA1 26,447
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    Goford Semiconductor G15N10C

    N100V,RD(MAX)<110M@10V,RD(MAX)<1
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    DigiKey G15N10C Cut Tape 2,631 1
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    G15N10C Digi-Reel 2,631 1
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    G15N10C Reel 2,500 2,500
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    Laird, A DuPont Business MGV1004R15N-10

    FIXED IND 150NH 43A 0.6MOHM SMD
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    DigiKey MGV1004R15N-10 Reel 2,000 500
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    Sager MGV1004R15N-10 1,000
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    UMW 15N10

    100V 15A 50W 80MR@10V,10A 2.5V@2
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    DigiKey 15N10 Digi-Reel 1,944 1
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    15N10 Cut Tape 1,944 1
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    15N10 Reel 2,500
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    Find more 15N10 price and stock on Findchips.com

    15N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat tfi(typ) =1000 V = 30 A = 3.8 V = 115 ns Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000


    Original     		PDF 15N100C O-220AB O-263

    15N100C

    Abstract: 15n10 TO-263AA IXGp 15N100C TO-220 footprint
    Text: IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series VCES IC25 VCE sat tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C


    Original     		PDF 15N100C O-220AB O-263 728B1 15N100C 15n10 TO-263AA IXGp 15N100C TO-220 footprint

    15n10

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 15N100Q 15N100Q O-247 O-268 O-268AA 15n10

    Untitled

    Abstract: No abstract text available
    Text: IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series Symbol VCES IC25 VCE sat tfi(typ) Test Conditions =1000 V = 30 A = 3.5 V = 115 ns Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM


    Original     		PDF 15N100C O-220AB O-263 728B1

    15N100Q

    Abstract: 15n10 15N100 IXFH15N100Q
    Text: HiPerFETTM Power MOSFETs VDSS = ID25 = RDS on = IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt TO-247 AD (IXFH) Preliminary data sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 15N100Q O-247 15N100Q 15n10 15N100 IXFH15N100Q

    15n10

    Abstract: 15N100C 15N100
    Text: Advanced Technical Information IXGA 15N100C IXGP 15N100C IGBT Lightspeed Series VCES IC25 VCE sat = = = = tfi(typ) 1000 V 30 A 3.5 V 115 ns TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF 15N100C O-220AB O-263 15n10 15N100C 15N100

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 15N100Q 15N100Q O-247 O-268 O-268AA

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGA 15N100C IXGP 15N100C IGBT Lightspeed Series VCES IC25 VCE sat = = = = tfi(typ) 1000 V 30 A 3.5 V 115 ns TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF 15N100C 15N100C O-220AB O-263

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGH 15N100C IXGT 15N100C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C


    Original     		PDF 15N100C 15N100C O-268 O-247 O-268AA

    15N100

    Abstract: IXTN 79 N 20 IXTN15N100
    Text: MegaMOSTMFET IXTN 15N100 VDSS = 1000 V = 15 A = 0.6 Ω ID25 RDS on N-Channel Enhancement Mode KS Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 10 kΩ 1000 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF 15N100 OT-227 15N100 IXTN 79 N 20 IXTN15N100

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGH 15N100C IXGT 15N100C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C


    Original     		PDF 15N100C 15N100C O-268 O-247 O-268AA

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class 1000 V 15 A 0.7 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt TO-247 AD IXFH Preliminary data sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 15N100Q O-247

    15n10

    Abstract: 15N100 15N100Q IXFH15N100Q
    Text: HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class VDSS = ID25 = RDS on = trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt TO-247 AD (IXFH) Preliminary data sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 15N100Q O-247 15n10 15N100 15N100Q IXFH15N100Q

    15N100

    Abstract: IXFH15N100 IXFH14N100 14N100 IXFT14N100 N100 CASE OUTLINE 55 BT- Style 1
    Text: VDSS HiPerFETTM Power MOSFETs IXFH/IXFT/IXFX14 N100 IXFH/IXFT/IXFX15 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 RDS on 1000 V 14 A 0.75 W 1000 V 15 A 0.70 W trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFH/IXFT/IXFX14 IXFH/IXFT/IXFX15 14N100 15N100 15N100 IXFH15N100 IXFH14N100 14N100 IXFT14N100 N100 CASE OUTLINE 55 BT- Style 1

    SSD15N10

    Abstract: MosFET 15N10
    Text: 15N10 15A, 100V, RDS ON 110mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The 15N10 provide the designer with the best combination of fast switching. The TO-252 package is


    Original     		PDF SSD15N10 O-252 SSD15N10 15N10 07-Mar-2013 MosFET 15N10

    AS85049/31, MS3416 and MIL-DTL-85723/15N

    Abstract: No abstract text available
    Text: AS85049 AS85049/31, MS3416 and MIL-DTL-85723/15N Self-Locking and Non-Self-Locking E-Nut Finish A = Anodize, Black N = Electroless Nickel W = 1,000 Hour Cadmium Olive Drab over Electroless Nickel X = Nickel Fluorocarbon Polymer Y = Pure Dense Electrodeposited


    Original     		PDF AS85049 AS85049/31, MS3416 MIL-DTL-85723/15N AS50151 AS34001 MIL-DTL-26482 AS81703 MIL-DTL-83723 AS85049/31, MS3416 and MIL-DTL-85723/15N

    15N100

    Abstract: No abstract text available
    Text: PIXYS : MegaMOS FET IXTN 15N100 V DSS ID25 1000 V 15 A D 0.6 Q DS on N-Channel Enhancement Mode Symbol Test Conditions v Tj =25°Cto150°C 1000 V v DGB T, =25°C to 150° C; RGS= 10k£2 1000 V VGS VGSM Continuous ¿20 V Transient d30 V Us Tc =25°C 15 A


    OCR Scan     		PDF 15N100 OT-227 Cto150 C2-90 C2-91 15N100

    1SN10

    Abstract: No abstract text available
    Text: IXYS 15N100 VD S S MegaMOS FET = 1000 V = 15 A D 25 R D S on N-Channel Enhancement Mode = 0.6 Q OD G I s Sym bol Test Conditions ''- P ' ¿s Maximum Ratings V DSS T j = 2 5°C to 150°C 1000 V v OGR T j = 2 5°C to 150°C; R GS = 10 k£l 1000 V V Gs


    OCR Scan     		PDF IXTN15N100 OT-227 E1S3432 C2-98 15N100 C2-99 1SN10

    Untitled

    Abstract: No abstract text available
    Text: VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14N100 IXFH/IXFT/15N100 p ^D25 DS on 1000 V 14 A 0.75 Q 1000 V 15 A 0.70 ß trr <200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data sheet Symbol Test Conditions v TJ Maximum Ratings


    OCR Scan     		PDF IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 14N100 15N100 O-247 to150

    D1488

    Abstract: TO-247 AD
    Text: □ IX Y S VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14 N100 IXFH/IXFT/IXFX15 N100 N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family D ^D25 1000 V 14 A 1000 V 15 A trr < 200 ns D S o n 0.75 Q 0.70 Q Preliminary data sheet Maximum Ratings


    OCR Scan     		PDF IXFH/IXFT/IXFX14 IXFH/IXFT/IXFX15 10TransientThermallmpedance D1488 TO-247 AD

    Untitled

    Abstract: No abstract text available
    Text: TOKO AMERICA INC FMK S^E ]> m ? b 3 2 0002533 T2 2 • TAI TOKO Series DC-DC Converters ■ OVERVIEW TOKO’s engineers designed these converter modules with primary emphasis on small size, lightweight and low cost. Conversion efficiencies of up to 75%. These non-floating type converters were developed for


    OCR Scan     		PDF TDb7b32

    15N100

    Abstract: 15n10 14N100
    Text: OIXYS HiPerFET Power MOSFETs D ^D S S IXFH/IXFT/IXFX14N100 IXFH/IXFT/15N100 N-Channel Enhancement Mode High dv/dt, Lowtrr, HDMOS™ Family ^D25 DS on n 1000 V 14 A 0.75 Q 1000 V 15 A 0.7 trr < 200 ns Preliminary data m m m ÊSm Symbol Test Conditions


    OCR Scan     		PDF IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 14N100 15N100 15N100 O-247 247TM 15n10

    15N100

    Abstract: No abstract text available
    Text: VDSS HiPerFET Power MOSFETs p ^D25 DS on 1000 V 14 A 0.75 Ü 1000V 15 A 0.7 Q trr < 200 ns ix f h / i x f x i 4 n io o IXFH/IXFX15 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data Symbol Test Conditions Maximum Ratings


    OCR Scan     		PDF IXFH/IXFX15 14N100 15N100 K30Ts

    75N1

    Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
    Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH


    OCR Scan     		PDF 76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B