96N20 Search Results

96N20 Price and Stock

Filter by Manufacturer


Littelfuse Inc IXTQ96N20P MOSFET N-CH 200V 96A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTQ96N20P	Tube	300		1	1 $6.37 10 $6.37 100 $5.08167 1000 $4.70875 10000 $4.70875	Buy Now
Littelfuse Inc IXTH96N20P MOSFET N-CH 200V 96A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH96N20P	Tube	269		1	1 $9.56 10 $9.56 100 $7.629 1000 $6.02288 10000 $5.4206	Buy Now
Littelfuse Inc IXFT96N20P MOSFET N-CH 200V 96A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFT96N20P	Tube	240		1	1 $8.36 10 $8.36 100 $6.67233 1000 $6.18275 10000 $6.18275	Buy Now
Littelfuse Inc IXFH96N20P MOSFET N-CH 200V 96A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH96N20P	Tube			1	1 $9.63 10 $9.63 100 $7.686 1000 $6.06788 10000 $5.46109	Buy Now
Littelfuse Inc IXTT96N20P MOSFET N-CH 200V 96A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTT96N20P	Tube			300	1 - 10 - 100 - 1000 $7.83403 10000 $7.83403	Buy Now

Find more 96N20 price and stock on Findchips.com

96N20 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IXTQ 96N20P IXTT 96N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 96 A Ω = 24 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ TO-3P (IXTQ) Maximum Ratings	Original	PDF	96N20P O-268 065B1 728B1 123B1 728B1
96N20 Abstract: 96N20P IXFT96N20P Text: PolarHTTM HiPerFET Power MOSFET IXFH 96N20P IXFT 96N20P IXFV 96N20P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 200 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	PDF	96N20P 96N20P 96N20 IXFT96N20P
96N20 Abstract: 96N20P 96N2 Text: IXTH 96N20P IXTQ 96N20P IXTT 96N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 96 A Ω = 24 mΩ RDS on N-Channel Enhancement Mode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	96N20P O-247 96N20P 96N20 96N2
Untitled Abstract: No abstract text available Text: IXTH 96N20P IXTQ 96N20P IXTT 96N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 96 A Ω ≤ 24 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 200 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	PDF	96N20P O-247 96N20P
96N20P Abstract: PLUS220SMD Text: IXFH 96N20P IXFV 96N20P IXFV 96N20PS PolarHTTM Power MOSFET VDSS ID25 = 200 = 96 = 24 < 200 RDS on trr V A Ω mΩ ns N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	96N20P 96N20PS O-247 96N20P PLUS220SMD
96N20P Abstract: 96N20 Text: IXTH 96N20P IXTQ 96N20P IXTT 96N20P PolarHTTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 200 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 200 V VGSS VGSM Continous	Original	PDF	96N20P O-247 96N20P 96N20
Untitled Abstract: No abstract text available Text: PolarHTTM HiPerFET Power MOSFET IXFH 96N20P IXFT 96N20P IXFV 96N20P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 200 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 200	Original	PDF	96N20P 10ing 96N20P
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	PDF	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
DIODE 1334 Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88 Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205	Original	PDF	110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP