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    ISOPLUS220TM Search Results

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    DSEE8-08CC

    Abstract: 10P40
    Text: DSEE 8-08CC HiPerDynFREDTM Epitaxial Diode IFAV = 10 A VRRM = 800 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 800 400 Type ISOPLUS 220LVTM DSEE 8-08CC 1 2 3 G Preliminary Data Sheet Conditions Maximum Ratings A A IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine


    Original     		PDF 8-08CC ISOPLUS220TM 220LVTM 10P400PJ DS99053 DSEE8-08CC ISOPLUS220LV DSEE8-08CC 10P40

    ixys dsi

    Abstract: 30-08AC 30-12AC ir 2411
    Text: DSI 30 Rectifier Diode ISOPLUS220TM VRRM = 800 - 1200 V IF AV M = 30 A Electrically Isolated Back Surface VRSM VRRM V V 900 1300 800 1200 Type ISOPLUS 220TM DSI 30-08AC DSI 30-12AC A C Preliminary Data Sheet C A Symbol IFRMS IFAV IFSM I2t Conditions Maximum Ratings


    Original     		PDF ISOPLUS220TM 220TM 30-08AC 30-12AC ISOPLUS220 DS98791A ixys dsi 30-08AC 30-12AC ir 2411

    26N50

    Abstract: IXFC 26N50 IXFH26N50 24N50 ixfc26n50 .26n50 .24n50 IXFC24N50
    Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface IXFC 26N50 IXFC 24N50 ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM


    Original     		PDF ISOPLUS220TM 26N50 24N50 220LVTM IXFC26N50 IXFC24N50 IXFH26N50 728B1 123B1 728B1 26N50 IXFC 26N50 24N50 ixfc26n50 .26n50 .24n50 IXFC24N50

    16-06A

    Abstract: DSEA16-06AC 1606a
    Text: DSEA16-06AC IFAV = 2x8 A VRRM = 600 V trr = 35 ns HiPerFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VRRM V V 600 600 Type DSEA16-06AC ISOPLUS220TM 1 2 1 3 2 3 Isolated back surface * * Patent pending Symbol


    Original     		PDF DSEA16-06AC ISOPLUS220TM 6A/DSEC16-06A ISOPLUS220 16-06A DSEA16-06AC 1606a

    IXUC160N075

    Abstract: No abstract text available
    Text: ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC160N075 VDSS = 75 V ID25 = 160 A Ω RDS on = 6.5 mΩ ISOPLUS220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 150°C 75 V VGS Continuous


    Original     		PDF IXUC160N075 ISOPLUS220TM 220TM 728B1 065B1 123B1 IXUC160N075

    DSEC29

    Abstract: DSEC 29 DSEC
    Text: HiPerFREDTM Epitaxial Diode DSEA 59-06BC DSEC 59-06BC = 2x30 A = 600 V = 35 ns IFAV VRRM trr ISOPLUS220TM Electrically Isolated Back Surface DSEA Preliminary Data Sheet VRSM VRRM V V 600 600 ISOPLUS220TM E153432 Type 1 DSEC 2 3 2 3 DSEA 59-06BC DSEC 59-06BC


    Original     		PDF 59-06BC ISOPLUS220TM E153432 29-06B DS98817A DSEC29 DSEC 29 DSEC

    CoolMOS Power Transistor

    Abstract: POWER MOSFET 4600 UPS SIEMENS 25N80C
    Text: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V ID25 = 20 A Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF ISOPLUS220TM 25N80C E153432 065B1 728B1 123B1 CoolMOS Power Transistor POWER MOSFET 4600 UPS SIEMENS 25N80C

    80N085

    Abstract: No abstract text available
    Text: HiPerFETTM MOSFET IXFC 80N085 VDSS = 85 V ID25 = 80 A Ω RDS on = 11 mΩ ISOPLUS220TM Electrically Isolated Back Surface trr ≤ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 80N085 ISOPLUS220TM 405B2 80N085

    Untitled

    Abstract: No abstract text available
    Text: DGSS 20-06CC VRRM = 600 V 2x300V IDC = 38 A CJunction = 16 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Marking on product DGSS 20-06CC DGSS 20-06CC Circuit Package ISOPLUS220A


    Original     		PDF 20-06CC ISOPLUS220TM 2x300V) ISOPLUS220A

    Untitled

    Abstract: No abstract text available
    Text: IXKC 23N60C5 Advanced Technical Information ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM


    Original     		PDF 23N60C5 ISOPLUS220TM E72873

    Untitled

    Abstract: No abstract text available
    Text: DSEE 8-08CC HiPerDynFREDTM Epitaxial Diode IFAV = 10 A VRRM = 800 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 800 400 Type ISOPLUS 220LVTM DSEE 8-08CC 1 2 3 G Preliminary Data Sheet Conditions Maximum Ratings A A IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine


    Original     		PDF 8-08CC ISOPLUS220TM 220LVTM 10P400PJ DS99053 DSEE8-08CC ISOPLUS220LV

    16N60B2D

    Abstract: No abstract text available
    Text: Advance Technical Information IXGC 16N60B2 HiPerFASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case VCES = 600 V = 28 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns Electrically Isolated Back Surface D1 Symbol Test Conditions Maximum Ratings


    Original     		PDF 16N60B2 16N60B2D1 ISOPLUS220TM IC110 ID110 IXGC16N60C2D1 220TM E153432 405B2 16N60B2D

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 60N10 VDSS = 100 V ID25 = 60 A Ω RDS on = 16.4 mΩ ISOPLUS220TM Electrically Isolated Back Surface Symbol Test Conditions ISOPLUS220TM Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VGS Continuous


    Original     		PDF ISOPLUS220TM 60N10 728B1 065B1 123B1

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM IXTP 180N055T IXTQ 180N055T VDSS = 55 V ID25 = 180 A Ω RDS on = 4.0 mΩ TO-220 (IXTP) Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C 55 V VGS Continuous ±20 V ID25 TC = 25°C; Note 1


    Original     		PDF ISOPLUS220TM 180N055T 180N055T O-220 O-220) 123B1 728B1 065B1 IXTP180N055T

    ixfh26n50q

    Abstract: 26N50 IXFC 26N50
    Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50Q IXFC 24N50Q Electrically Isolated Back Surface ID25 RDS on 0.20 Ω 0.23 Ω 500 V 23 A 500 V 21 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		PDF ISOPLUS220TM 26N50Q 24N50Q 220TM 26N50 24N50 ixfh26n50q IXFC 26N50

    20n60c

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600


    Original     		PDF ISOPLUS220TM 20N60C 220LVTM O-220LV 728B1 065B1 123B1 20n60c

    Untitled

    Abstract: No abstract text available
    Text: DSEE29-06CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode Electrically Isolated Back Surface IFAV = 30 A VRRM = 600 V trr = 30 ns VRRMc ISOPLUS220TM ISOPLUS220TM VRRM V V 600 300 Type DSEE29-06CC 1 2 3 G Symbol Conditions Maximum Ratings TC = 115°C; rectangular, d = 0.5


    Original     		PDF DSEE29-06CC ISOPLUS220TM DS98815 ISOLPLUS220LV 728B1 065B1 123B1

    Untitled

    Abstract: No abstract text available
    Text: DSEE29-12CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 VQ trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMQ VRRM V V 1200 600 Type ISOPLUS220TM DSEE29-12CC 1 2 1 3 2 3 Isolated back surface * Symbol


    Original     		PDF DSEE29-12CC ISOPLUS220TM ISOPLUS220

    Untitled

    Abstract: No abstract text available
    Text: DGSS 10-06CC Gallium Arsenide Schottky Diode IDC = 9 A VRRM = 600 V CJunction = 16 pF ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRRMQ V VRRM Type ISOPLUS220TM V 600 300 1 DGSS 10-06CC 1 2 2 3 3 Isolated back surface * Symbol IDC


    Original     		PDF 10-06CC ISOPLUS220TM 10-06CC 300us, 8863A ISOPLUS220

    IXYS SEMICONDUCTOR

    Abstract: No abstract text available
    Text: DGSS 10-06CC VRRM = 2x300 V IDC = 18 A CJunction = 10.7 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Circuit Package ISOPLUS220A DGSS 10-06CC 1 2 3 1 3 Features Conditions Maximum Ratings


    Original     		PDF 10-06CC ISOPLUS220TM 2x300 ISOPLUS220A DGSS10-06CCC D-68623 IXYS SEMICONDUCTOR

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM MOSFET IXFC 80N085 VDSS = 85 V ID25 = 80 A Ω RDS on = 11 mΩ ISOPLUS220TM Electrically Isolated Back Surface trr ≤ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 80N085 ISOPLUS220TM 405B2

    Untitled

    Abstract: No abstract text available
    Text: IXKC 40N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 28 A RDS on) max = 95 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features


    Original     		PDF 40N60C ISOPLUS220TM E72873 20080523a

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 16N80P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 800 V = 9 A Ω ≤ 650 mΩ ≤ 250 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol


    Original     		PDF ISOPLUS220TM 16N80P

    Untitled

    Abstract: No abstract text available
    Text: DGSS 6-06CC VRRM = 600 V 2x300V IDC = 11 A CJunction = 4 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Marking on product DGSS 6-06CC DGSS 6-06CC Circuit Package ISOPLUS220A


    Original     		PDF 6-06CC 2x300V) ISOPLUS220TM ISOPLUS220A