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Dialight 598-8N30-107F LED ORANGE CLEAR 0603 SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	598-8N30-107F	Reel	4,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.07272	Buy Now
	598-8N30-107F	Cut Tape	3,957		1	1 $0.35 10 $0.279 100 $0.1252 1000 $0.09292 10000 $0.0808	Buy Now
	598-8N30-107F	Digi-Reel			1	1 $0.35 10 $0.279 100 $0.1252 1000 $0.09292 10000 $0.0808	Buy Now
Mouser Electronics	598-8N30-107F		11,870			1 $0.35 10 $0.279 100 $0.114 1000 $0.081 10000 $0.069	Buy Now
New Advantage Corporation	598-8N30-107F		8,000		1	1 - 10 - 100 - 1000 - 10000 $0.0721	Buy Now
Littelfuse Inc IXFK88N30P MOSFET N-CH 300V 88A TO264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK88N30P	Tube	296		1	1 $15.16 10 $15.16 100 $11.5491 1000 $9.60016 10000 $9.60016	Buy Now
Littelfuse Inc IXTQ88N30P MOSFET N-CH 300V 88A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTQ88N30P	Tube	126		1	1 $11.56 10 $11.56 100 $9.35667 1000 $7.98065 10000 $7.32018	Buy Now
Littelfuse Inc IXTT88N30P MOSFET N-CH 300V 88A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTT88N30P	Tube	6		1	1 $13.04 10 $13.04 100 $10.55833 1000 $9.00565 10000 $8.26035	Buy Now
Littelfuse Inc IXFH88N30P MOSFET N-CH 300V 88A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH88N30P	Tube			30	1 - 10 - 100 $10.89978 1000 $9.87791 10000 $9.87791	Buy Now

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88N30 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
88N30P Abstract: A220D 88N30 Text: PolarHTTM HiPerFET Power MOSFET IXFH 88N30P IXFK 88N30P VDSS ID25 RDS on trr = 300 V = 88 A Ω = 40 mΩ ≤ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300	Original	PDF	88N30P O-247 88N30P A220D 88N30
88N30 Abstract: No abstract text available Text: PolarHTTM Power MOSFET IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P = 300 V = 88 A ≤ 40 mΩ Ω VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	PDF	88N30P O-247 88N30P 88N30
88N30 Abstract: IXTH88N30P DSA003702 Text: IXTH 88N30P IXTK 88N30P IXTQ 88N30P PolarHTTM Power MOSFET VDSS ID25 RDS on = 300 V = 88 A Ω = 40 mΩ N-Channel Enhancement Mode For Plasma Display Applications TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	88N30P 88N30P O-247 O-247 O-264 IXTH88N30P 88N30 DSA003702
88n30p Abstract: 88N30 IXTQ88N30P Text: PolarHTTM Power MOSFET IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P VDSS ID25 = 300 V = 88 A Ω = 40 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) D (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR	Original	PDF	88N30P 88N30P O-247 O-264 88N30 IXTQ88N30P
88N30 Abstract: 88N30P Text: PolarHTTM HiPerFET Power MOSFET IXFH 88N30P IXFK 88N30P VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	PDF	88N30P O-247 88N30 88N30P
88N30 Abstract: No abstract text available Text: PolarHTTM Power MOSFET IXTH 88N30P IXTK 88N30P VDSS ID25 RDS on = 300 V = 88 A Ω = 40 mΩ N-Channel Enhancement Mode For Plasma Display Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	88N30P 88N30P O-247 O-264 88N30
88N30 Abstract: 88N30P Text: IXTH 88N30P IXTT 88N30P PolarHTTM Power MOSFET RDS on VDSS = 300 ID25 = 88 Ω = 40 mΩ V A N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM 300	Original	PDF	88N30P O-247 88N30 88N30P
88N30P Abstract: 88N30 IXTQ88N30P ixth IXTH88N30P Text: PolarHTTM Power MOSFET IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 300 V Maximum Ratings VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	PDF	88N30P O-247 88N30P 88N30 IXTQ88N30P ixth IXTH88N30P
88N30P Abstract: IXTQ88N30P 88N30 Text: Advanced Technical Information IXTK 88N30P IXTQ 88N30P PolarHTTM Power MOSFET VDSS ID25 RDS on = 300 V = 88 A Ω = 40 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	88N30P O-264 88N30P IXTQ88N30P 88N30
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	PDF
88N30W Abstract: No abstract text available Text: Advanced Power Electronics Corp. 88N30W-HF-3 N-channel Enhancement-mode Power MOSFET Low On-Resistance D Simple Drive Requirement Fast Switching Characteristics G BV DSS 300V R DS ON 48mΩ ID 48A S Description Advanced Power MOSFETs from APEC provide the designer with the best	Original	PDF	AP88N30W-HF-3 AP88N30W-HF-3 AP88N30 88N30W 88N30W
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	PDF	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
DIODE 1334 Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88 Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205	Original	PDF	110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP